TRANSISTOR D1 Search Results
TRANSISTOR D1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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TRANSISTOR D1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
to223Contextual Info: 2SD2403Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Features D1 A • This transistor is also available in the TO-223 case with the type designation PZT2403 E E1 • NPN Silicon Epitaxial Planar Transistor for |
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2sd2403qot-89o-223pzt2403+3 | |
AC1501Contextual Info: A42Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 A E E1 • This transistor is also available in the TO-92 case with the |
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ot-89mpsa4201-jun-2002ac1501 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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dta143ee416/sc | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network |
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ldta124eet1sc-89 | |
6aa markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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dta114ye416/sc6aa marking | |
D1486
Abstract: 2SC4342
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2sc4342o-126d1486 | |
D1485
Abstract: 2SA1720
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2sa1720o-220d1485 | |
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Contextual Info: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance |
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bd239cbd240co-220 | |
nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
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2sd1582nec 620hfe transistorhigh hfe transistor | |
BD239C
Abstract: BD240C JESD97 transistor marking 1a
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bd239cbd240co-220jesd97+1 | |
2SA1743
Abstract: C11531E
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2sa1743c11531e | |
2SD1581Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is |
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2sd1581 | |
2SA1742Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal |
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2sa1742o-220 | |
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2SC4550Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is |
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2sc4550 | |
NEC 2sc4552
Abstract: 2SC4552
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2sc4552nec 2sc4552 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
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kia7900pitc7sh04fukic7sh04fusc604+16 | |
D1615
Abstract: transistor ab2 12
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2sd24252sb1578c11531ed1615+1 | |
2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
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2sd24022sb1571transistor 2sd2402transistor marking ey | |
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for |
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2sd24032sb1572 | |
2SB1453
Abstract: NEC 2SB1453
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2sb1453nec 2sb1453 | |
2SB1453
Abstract: NEC 2SB1453
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2sb1453nec 2sb1453 | |
D1316
Abstract: 2SA1744
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2sa1744d1316 | |
2SC4551Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is |
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2sc4551 | |