TRANSISTOR D 798 Search Results

BFW16A

Abstract: TRANSISTOR C 1177 Transistor D 798 bfw16a philips
Contextual Info: Philips Semiconductors Product specification T 31 17 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL SbE D DESCRIPTION MING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. 1 The transistor has extremely good intermodulation properties and a

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BFX89

Abstract: case BFX89 transistor IR 652 P
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.

Contextual Info: Philips Sem iconductors bb53*131 □03212*1 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

Contextual Info: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power

BFY90 PHILIPS

Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Contextual Info: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

Contextual Info: DTA123YU/DTA123YK/DTA123YS/DTA123YF DTA123YL/DTA123YA/DTA123YV / T ransistors D TA 123Y U /D TA 123Y K /D TA 123 YS D TA 123Y F/D TA 123Y L/D TA 123 YA DTA123YV 7 ^/Transistor Switch Digital Transistors Includes Resistors • ^ W ^ T H ill/D im en sio n s (Unit: mm)

transistor bfw16a

Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
Contextual Info: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

transistor BD 522

Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Contextual Info: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 003T4Dfl TS1 A IAPX tJLW /^y U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications-in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the

vk200 philips

Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90
Contextual Info: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

bd798

Abstract: BD8015 Motorola design of audio amplifier power transistor audio amplifier 500 watts BD801 MOTOROLA TRANSISTOR transistor BD 522
Contextual Info: MOTOROLA Order this document by BD801/D SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

M38527

Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Contextual Info: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

CEP9060R

Abstract: CEB9060R CEF9060R
Contextual Info: CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP9060R 55V 10.5mΩ 100A 10V CEB9060R 55V 10.5mΩ 100A CEF9060R 55V 10.5mΩ 100A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

transistor BUX 48

Abstract: bux 42 emetteur BUX42 transistor BUX
Contextual Info: *BUX42 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R S IL IC IU M NPN. M ESA T R IP L E D IF F U S E ^ P re ferred device D isp o sitif recommandé High speed, high curre n t, high pow er transistor T ransistor de puissance rapid e, f o r t c o u ra n t

ED-2522

Abstract: TIC 33 LCD
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC26-13 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight D E S C R IP T IO N N L8060BC 26-13 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module com prising

Contextual Info: rz 7 ^ 7 # SCS-THOMSON 5 I L i t m * ! T D A 8 1 4 3 HORIZONTAL DEFLECTION POWER DRIVER The current source characteristic of this device is adapted to the non-linear current gain behaviour of the power transistor providing a m inimum power dissipation. The TDA8143 is internally protected

L1209

Abstract: V799
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR 2SK1584 _ y N-CHANNEL MOS FET FOR SW ITCHING PACKAG E D IM E N S IO N S «Unit : mm The 2SK1584, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output o f ICs having a 5 V

IC 2561 D 431

Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Contextual Info: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060AC26-11 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated two lamps/edge-light type backlight D E S C R IP T IO N N L 8 0 6 0 A C 2 6 -1 1 is a T F T (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

Contextual Info: m 7*12*1237 rz 7 Ä 7f G04b243 ôbQ • SGTH _ SGS-TUOMSON RÆ Q M[iLËOT(s«S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP 4N 1 0 0 X I ■ . ■ . . ■ . 1000 V R d S( oii < 4 0 Id 2 A TYPICAL RDS(on) = 3.1 Cl

transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Contextual Info: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB

PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.