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    TRANSISTOR D 718 Search Results

    TRANSISTOR D 718 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR D 718 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUX20

    Abstract: bux 716 transistor BUX
    Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection


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    bux20cb-159bux 716transistor bux PDF

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


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    dl111/djuly-2001r14525tip122 tip127 audio amp schematic+9mje521 equivalentbjt small signal low power bd139mj15003 300 watts amplifier2n3773 pinouttransistor mj11032 equivalentmj11028 transistor equivalent2n3055 ic2n3773 audio amplifier diagram2n222 transistor use as audio amplifier PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    TRANSISTOR GB 558

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


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    2sc50132sc5013-t12sc5013-t2transistor gb 558 PDF

    bux21

    Abstract: emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance
    Contextual Info: *B U X 21 NPN S IL IC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR A N S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt couran t


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    cb-159bux21emetteurbux thomson+4p6021bux 722jse10amplificateur puissance PDF

    2N2297

    Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 □□eaD'U 2=56 2N 2297 ;v SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. QUICK REFERENCE DATA v CBO max. 80 V Collector-emitter voltage open base


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    bbs3t312n2297 PDF

    2N2297

    Abstract: LB 124 transistor
    Contextual Info: N AMER PHILIPS/DISCRETE t.'ìE ]> m □□200^1 2=50 2N2297 I SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor intended fo r large signal h.f. and v.h.f. am plifier applications. Q UICK REFERENCE D A T A Collector-base voltage open em itter v CBO max.


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    s3t312n2297lb 124 transistor PDF

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


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    2sc5010 PDF

    BUX40

    Contextual Info: rz 7 ^ 7 # SCS-THOMSON it m D ÏÏM K S B U X 40 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX40 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military e


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    bux40120ration PDF

    2SC 968 NPN Transistor

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


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    2sc50072sc 968 npn transistor PDF

    Transistor BFR 96

    Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
    Contextual Info: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar


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    CA3600E

    Abstract: RCA-CA3600E CA3600 RCA-CA3080 rca CA3080 TRANSISTOR N2 TA6368 CA3046 pnp array RCA ca3600 RCA COS/MOS Integrated Circuits Manual
    Contextual Info: G E SOLID STATE D I D È I 3Ô7SDÛ1 0G14ti57 i | ^ ^ 3 ^ 3 :_ Arrays CA3600 CM O S Transistor Array For Linear Circuit Applications Features: • High in p u t resistance.1 0 0 G f i t y p .


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    MRD300

    Abstract: MRD310
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD300 MRD310* P h o to D e te c to rs Transistor Output * M o to ro la Preferred D e v ic i The M RD300 and M RD310 are designed for applications requiring radiation se n sitivity and stable characteristics. PHOTO D ET EC T O R S


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    rd300rd310mrd300mrd310 PDF

    MRD300

    Abstract: 716 Motorola MRD310 light sensitive photo diode To18 transistor motorola reliability color sensitive PHOTO TRANSISTOR Rise time of photo transistor 716 transistor
    Contextual Info: ROLA SC D I O D E S / O P T O L4E T> b 3 b ? Z 5 5 OOflb77b TIT • MOT? MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RD300 M R D 310* P h o to D e te c to rs Transistor Output •Motorola Preferred Device The MRD300 and MRD310 are designed fo r applications re qu irin g radiation sensitivity


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    b3b72ssmrd300mrd310b3t72ss+6716 motorolalight sensitive photo diodeto18 transistor motorola reliabilitycolor sensitive photo transistorrise time of photo transistor716 transistor PDF

    an5296

    Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
    Contextual Info: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)


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    ca3146ca3146aca3183ca3183a+9120mhzan5296ca3146e3183aan5296 application of the ca3018 integratedharris ca3146eca3183m963146aca3146 npn PDF

    2SK2235

    Abstract: DDS3400 44t transistor DDS34
    Contextual Info: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


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    smd transistor 718

    Abstract: 42AL bss 97 transistor
    Contextual Info: SIEMENS B U Z 102A L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL VÒS 50 V b 42 A


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    o-220102alc67078-s1356-a2smd transistor 718+242albss 97 transistor PDF

    Contextual Info: T O SH IB A TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SII -5 2 S K 1 357 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER A N D M OTOR DRIVE APPLICATIONS. • • • • 2SK1357 ^0^7550 00232flb 275 INDUSTRIAL APPLICATIONS


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    2sk135700232flb20kfi0023b43+2o-220smq023b44 PDF

    2SK2089

    Abstract: 00E3b D0233
    Contextual Info: C1DC]72SG TOSHIBA D0233bf l TO SHIBA FIELD EFFECT TRANSISTOR 130 2SK2089 SILICON N CHANNEL M OS TYPE tt-M O SII.5 2SK2089 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S TO-22QFL CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE


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    d0233bfl2sk2089t0-220fl20kfi+7o-22qabo-22050urceo-220fl00e3b4300e3bd0233 PDF

    Contextual Info: h ’7 > y X ^ / T ransistors 2SD1943 2SD1943 NPN '> • ; = ! > i£ J i> J t ^ ± illiffl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor h FE V 'm i' Vr>4 V 'A ''J| "r • ^JB 'ri'iilS /D im en sio ns Unit: mm 1) 4. 5 ± 0 . 2 : h FE =


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    2sd1943 PDF

    2SK2222

    Contextual Info: TOSHIBA 2SK2222 «Î0T7250 00233Û1 b74 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt-M O SII 5 2SK2222 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE


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    0t7e502sk2222300/iao-22qab+6o-22050urceo-220fl00e3b43o-220smtdt725q PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416 PDF

    Contextual Info: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p .


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    fcx718 PDF

    jfs series

    Abstract: lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5
    Contextual Info: INSTRUCTION MANUAL JFS0500 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 LAMBDA ELECTRONICS INCOPORATED 3055 DEL SOL BOULEVARD , SAN DIEGO , CA 92154-3474 • TEL: 619-575-4400 • FAX: 619-575-7185 IMJFS05 – REV D


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    jfs0500imjfs05jfs serieslambda transistor+8transistor 3055lambda instruction manualpower transistor 3055500w power inverter circuit diagramspower transistor in 30553055 transistor3055iec1000-4-5 PDF