TRANSISTOR D 471 Search Results

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

TRANSISTOR D 471

Abstract: BP317 BSS87 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

TRANSISTOR D 471

Abstract: BP317 BSP89 MBB691 MBB692 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

TRANSISTOR D 471

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP122 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

MAM355

Abstract: msa63
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 June 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

04547

Abstract: 5401 DM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

TRANSISTOR D 471

Abstract: bs108
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 2001 May 18 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP130 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

ULN2003A 15 pin details application

Abstract: pin details of ULN2003A ULN2003AN ULN2003AD ULN2003ANSR ULN2003AJ ULN2003ADRE4 ULN 283
Contextual Info: ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A HIGHĆVOLTAGE HIGHĆCURRENT The ULN2001A is obsolete DARLINGTON TRANSISTOR ARRAY and is no longer supplied. SLRS027G − DECEMBER 1976 − REVISED JUNE 2004 D 500-mA-Rated Collector Current D D D D

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE D • bbS3^31 0030775 0^1 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BLV36

Abstract: TRANSISTOR D 471 2222 372 2222 379 RF POWER TRANSISTOR NPN vhf RF push pull power amplifier vhf linear amplifier L15A television vhf linear pulse power amplifier blv36
Contextual Info: PHILIPS INTERNATIONAL bSE D D 711002t. DOba^OÔ SE2 • PHIN BLV36 A VHF LINEAR PUSH-PULL POWER TRANSISTOR T w o NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is prim arily intended for use in linear V H F television transmitters and transposers vision or

PHD24N03LT

Contextual Info: PHD24N03LT N-channel enhancement mode field-effect transistor Rev. 02 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD24N03LT in SOT428 D-PAK .

PHD83N03LT

Abstract: PHD83
Contextual Info: PHD83N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD83N03LT in a SOT428 D-PAK .

transistor BR 471 A

Abstract: PHD95N03LT 08216
Contextual Info: PHD95N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 18 July 2001 Product data M3D300 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHD95N03LT in SOT428 D-PAK .

Contextual Info: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

MB87S

Contextual Info: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: Philips Semiconductors b b s a 'm D D B D D B fl IT T M APX Product specification VHF push-pull power MOS transistor BLF278 N AUER PHILIPS/DISCRETE b'lE 1> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

BLX65

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

bje 133 resistor

Contextual Info: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

transistor 9567

Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
Contextual Info: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability