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    TRANSISTOR COMMON BASE AMPLIFIER Search Results

    TRANSISTOR COMMON BASE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy

    TRANSISTOR COMMON BASE AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1004MP

    Abstract: Avionics
    Contextual Info: 1004MP 4 Watts, 35 Volts, Pulsed Avionics - 960-1215 MHz GENERAL DESCRIPTION The 1004MP is a COMMON BASE transistor capable of providing 4 Watts of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes


    Original     		1004MP 1004MP Avionics PDF

    TF135

    Abstract: bf308
    Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 TF135 bf308 PDF

    microwave amplifier 2.4 ghz 10 watts

    Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
    Contextual Info: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier


    Original     		2324-12L 2324-12L microwave amplifier 2.4 ghz 10 watts amplifier TRANSISTOR 12 GHZ PDF

    microwave amplifier 2.4 ghz 10 watts

    Contextual Info: 2324-5 5 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-5 is a common base transistor capable of providing 5 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier


    Original     		160mA microwave amplifier 2.4 ghz 10 watts PDF

    1417 transistor

    Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
    Contextual Info: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier


    Original     		417-12A 1417 transistor transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic PDF

    1718-32L

    Contextual Info: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier


    Original     		1718-32L 1718-32L PDF

    NTE485

    Abstract: NPN planar RF transistor
    Contextual Info: NTE485 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 866MHz Description: The NTE485 is an NPN Silicon Epitaxial Planar Transistor that was designed for amplifier applications in the 806−866MHz frequency range. Internal input matching and Common Base Configuration assure optimum gain and efficiency across the entire frequency band.


    Original     		NTE485 866MHz NTE485 806-866MHz 836MHz NPN planar RF transistor PDF

    VHB40-28S

    Abstract: TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072
    Contextual Info: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 7.0 dB at 40 W/175 MHz


    Original     		VHB40-28S VHB40-28S 112x45° TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072 PDF

    55LT

    Contextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		200mA 55LT PDF

    transistor 60 watt

    Contextual Info: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF

    100 watt transistor

    Contextual Info: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		1850MHz, 100 watt transistor PDF

    MRAL1720-9

    Abstract: "RF Power Transistor" 2L TRANSISTOR NPN rf transistor
    Contextual Info: MRAL1720-9 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 250 2L FLG The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. C FEATURES: • Diffused Ballast Resistors. • Internal Matching Network


    Original     		MRAL1720-9 MRAL1720-9 "RF Power Transistor" 2L TRANSISTOR NPN rf transistor PDF

    transistor 30054

    Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
    Contextual Info: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications


    OCR Scan     		PDF

    microwave amplifier 2.4 ghz 10 watts

    Abstract: 2223 2223-9A transistor Common Base amplifier
    Contextual Info: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		223-9A 160mA microwave amplifier 2.4 ghz 10 watts 2223 2223-9A transistor Common Base amplifier PDF

    1617AB15

    Abstract: BVces
    Contextual Info: 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB15 is a COMMON EMITTER transistor capable of providing 15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM BASE STATION


    Original     		1617AB15 1617AB15 BVces PDF

    2015M

    Abstract: 2015M-2
    Contextual Info: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed


    OCR Scan     		2015M 600mA 2015M 2015M-2 PDF

    BLF6G21-10G

    Contextual Info: BLF6G21-10G Power LDMOS transistor Rev. 01 — 11 May 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		BLF6G21-10G BLF6G21-10G PDF

    MZ0912B50Y

    Contextual Info: MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG L N FEATURES: J O A B • PG = 7.0 dB min.at 50 W / 1215 MHz • Common Base


    Original     		MZ0912B50Y MZ0912B50Y PDF

    BLF6G22-180PN

    Contextual Info: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		BLF6G22-180PN BLF6G22-180PN PDF

    BLF6G22-45

    Abstract: BLF6G22S-45 ROGERS DUROID
    Contextual Info: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		BLF6G22S-45 BLF6G22S-45 BLF6G22-45 ROGERS DUROID PDF

    OUT40

    Contextual Info: 0 182998 .AGRIAN. INC T? infini02e]TA 0001433 a i l kCRIAN G EN ER A L 2304 D E S C R IP TIO N 4.0 WATTS - 20 VOLTS 2300 MHz The 2304 is a common base transistor capable of providing 4 watts of CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed


    OCR Scan     		0DG1433 cc-20 OUT40 PDF

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Contextual Info: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 PDF

    C4532X7R1E475M

    Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
    Contextual Info: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf PDF

    1090MP

    Contextual Info: 1090 MP 90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance package


    Original     		1090MP 25oC2 1090MP 90Watts. PDF