TRANSISTOR C63 Search Results

BUL310

Contextual Info: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED

transistor C639

Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
Contextual Info: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips

transistor C635

Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
Contextual Info: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement

transistor c63716

Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
Contextual Info: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement

Contextual Info: T O SH IB A MP4507 TOSHIBA PO W ER TRANSISTOR M OD ULE SILICON TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4507 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE. LOAD SWITCHING

transistor 2n5330

Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Contextual Info: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

c628 DIODE

Abstract: IRGB430UD2 C628 transistor diode c631 transistor C629 C632 c626 diode
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

C639

Abstract: transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

transistor C632

Abstract: igbt 500V 15A c632 DIODE c630 diode IRGB430UD2 C632
Contextual Info: P D - 9.1067 bitemational [ïôr |Rectifier IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c es = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

c638 transistor

Abstract: C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635
Contextual Info: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

transistor C639

Abstract: C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w
Contextual Info: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

transistor C632

Abstract: c628 DIODE igbt 500V 15A C628 transistor transistor c625 diode c631 IRGB430UD2 irgb430ud c627 DIODE
Contextual Info: PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: 19-4625; Rev 0; 5/09 MAX17102 Evaluation Kit The MAX17102 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for activematrix, thin-film transistor (TFT), liquid-crystal displays

GC 380

Abstract: D-12 IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

c63916

Abstract: c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 bc639 nxp c639 equivalent
Contextual Info: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA

c63610

Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
Contextual Info: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

c63716

Abstract: transistor c63716 C637 C-63716 BC637 BC637-16 BC638 BCP52 BCP55 BCX52
Contextual Info: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 — 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA

transistor C636

Abstract: C636 IRGP430UD2 G633
Contextual Info: htemational P D - 9.1063 SR ectifier IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes ail "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

D-12

Abstract: IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

transistor C637

Abstract: c637 transistor
Contextual Info: International ^Rectifier P D - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features Vces • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

c63610

Abstract: bc636 BCX51 c636 philips
Contextual Info: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips

transistor c63816

Abstract: c63816 c638 transistor c63816 transistor BC638 14046 BC637 BC638-16 BCP52 BCX52
Contextual Info: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips

C63816

Abstract: transistor c63816 c638 transistor cbc638 sot89 AE pnp c63816 transistor TO-92 plastic package transistors BC637 BC638 BC638-16
Contextual Info: BC638; BCP52; BCX52 60 V, 1 A PNP medium power transistors Rev. 07 — 26 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA