TRANSISTOR C5C Search Results

ed general semiconductor

Abstract: 2SC3125
Contextual Info: T O S H IB A 2SC3125 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 25 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 Good Lineality of fp I- 1 c5c5 ÈE- + 1 -EE MAXIMUM RATINGS Ta = 25°C

ic MARKING FZ

Abstract: 2SC3120 rf power npn 30Mhz .380 EPITAXIAL MURATA TTA23A100
Contextual Info: 2SC3120 TOSHIBA 2 S C 3 1 20 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 V H F ~ UHF BAND RF AMPLIFIER APPLICATIONS. c5c5 ÈE- + 1 M A X IM U M RATINGS Ta = 25°C

ME4003

Abstract: 2SC3124 12gw
Contextual Info: TOSHIBA 2SC3124 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 24 TV TUNER, VHF OSCILLATOR APPLICATIONS. U n i t in m m + 0 .5 2 .5 -I 1 3 + 0 .2 5 1 .5 - Q .l 5 I1 c5c5 ÈE- +1 -E3 dd +1 oo +l M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC

2SA1245

Abstract: A1245
Contextual Info: TOSHIBA 2SA1245 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE 2 S A 1 245 O O HIGH FREQUENCY AMPLIFIER AND SWITCHING APPLICATIONS. Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + 0.5 2.5 —0.3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC

Cbg MARKING TRANSISTOR

Abstract: TRANSISTOR CBG 2SA1312 2SC3324
Contextual Info: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V ç e O = 120V Excellent hpE Linearity hFE dC = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.) High hpE

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

TO220FI-LS

Abstract: H C 5287 TO-220FI-LS d 5287 2SC5264 ENN5287 NPN Transistor VCEO 1000V
Contextual Info: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage V cg o = 1 0 0 0 V . • High reliability (Adoption o f HVP process). • Adoption o f MBIT process.

DU2820S

Abstract: fl capacitor 1000 K 739 mosfet
Contextual Info: -= -=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz DU2820S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C

Contextual Info: 19-4706; Rev 0; 7/09 MAX17100 Evaluation Kit The MAX17100 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays (LCDs). The

MMBT4148

Abstract: SANYO 16AQU10M MMBT4148SE step-up switching 3A 16AQU10M MAX1513 MAX1513EVKIT MAX1514 MAX1514ETP JMK212BJ106MG
Contextual Info: 19-3525; Rev 0; 11/04 MAX1513 Evaluation Kit The MAX1513 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays. The EV kit

C1608X7R1H104K

Abstract: MAX8739 MAX8739EVKIT UMK107BJ104KA
Contextual Info: 19-0508; Rev 0; 3/06 MAX8739 Evaluation Kit Features The MAX8739 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides the voltages and features required for active-matrix, thin-film transistor (TFT), liquid-crystal displays (LCDs).

mark a7 sot23 DIODE

Abstract: GRM188R71H104K Y2 sot23 mark MARK Y6 Transistor Y5 sot23 C0603C224K4RAC C1608X5R0J106M C1608X7R1H104K GRM188R60J106M GRM188R71H221K
Contextual Info: 19-0855; Rev 0; 7/07 MAX17010 Evaluation Kit Features The MAX17010 evaluation kit EV kit is a fully assembled and tested surface-mount printed circuit board (PCB) that provides the voltages and features required for active-matrix, thin-film transistor (TFT), liquid-crystal

2SA1362

Abstract: A1362
Contextual Info: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage

2SA1163

Abstract: 2SC2713 A1163 XL05
Contextual Info: TOSHIBA 2SA1163 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 163 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : + 0.5 2 .5 - 0 .3 V^EO = - 120V Excellent Linearity : hFE (le = -0.1mA) / hFE (ÏC = -2mA) = 0.95 (Typ.)

Contextual Info: 19-5105; Rev 0; 12/09 MAX17115 Evaluation Kit The MAX17115 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for thin-film transistor (TFT), liquidcrystal display (LCD) applications. The EV kit contains

2SC4320

Contextual Info: TOSHIBA 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4320 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm + 0.2 2.9- a 3 • Low Noise Figure, High Gain. . NF = l.ld B , |S2le|2= 15dB f = 1GHz II -€ 3 MAXIMUM RATINGS (Ta = 25°C)

2SC3547B

Contextual Info: TOSHIBA 2SC3547B TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547B Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. + 0.5 2 .5 -1 1 3 + 0 .2 5 1 .5 - Q .l 5 COM M ON COLLECTOR • I- Transition Frequency is High and Dependent on Current Excellently.

2SC3547A

Contextual Info: TOSHIBA 2SC3547A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547A TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR Unit in mm + 0 .5 2 .5 -1 1 3 + 0 .2 5 1 .5 - Q .l 5 I- • Transition Frequency is High and Dependent on Current Excellently.

2SC3609

Contextual Info: TOSHIBA 2SC3609 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3609 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. + 0.2 2.9 - a 3 • • Low Noise Figure, High Gain. NF = l.ldB, |S2iel2= 13dB f = 1GHz II -€3 2 E0 MAXIMUM RATINGS (Ta = 25°C)

S22e

Abstract: 2SC3429 CI 15015
Contextual Info: TOSHIBA 2SC3429 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3429 Unit in mm V H F ~ UHF BAND LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 —0.3 • Low Noise Figure. . NF = 1.5dB, |S2lel2= 16dB f = 500MHz . NF = 1.7dB, |S 2 lel 2= 10.5dB (f = 1GHz)

2SC309

Abstract: 2SC3099
Contextual Info: TOSHIBA 2SC3099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F ~ UHF BAND LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2 .5 —0 .3 • Low Noise Figure. . NF = 1.7dB, |S2lel2= 15dB f = 500MHz . NF = 2.5dB, |S 2 lel 2= 9.5dB (f = 1GHz)

TTL TRANSISTOR MODEL PARAMETER

Abstract: ebe switches CHD01940 model transistor 910
Contextual Info: FEATURES • 9 - 1 0 M Hz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 J VET MODEL NO. CHD01940 Switch-Attenuator

2SA1163

Abstract: 2SC2713 A1163
Contextual Info: TO SH IB A 2SA1163 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 163 U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. High Voltage : + 0 .5 2 . 5 — 0 .3 V q e o = —120V + 0.85 1.5-0.15 Excellent h p g Linearity

transistor C5D

Abstract: 2SC3123
Contextual Info: 2SC3123 TOSHIBA TOSHIBA TRANSISTOR TV VHF MIXER APPLICATIONS. • • SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 23 Unit in mm + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.)