TRANSISTOR C47 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA  FEATURES * Very low output-on resistance (RON). * Low capacitance.  ORDERING INFORMATION Order Number Package 2SC4774G-AB3-R SOT-323

RF POWER TRANSISTOR NPN

Abstract: 2SC4774 2SC4774L-AL3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA FEATURES „ * Very low output-on resistance (RON). * Low capacitance. „ ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC4774L-AL3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA FEATURES „ * Very low output-on resistance (RON). * Low capacitance. „ ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC4774L-AL3-R

BLF6G13L

Abstract: UT-141C-25-TP
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 — 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

UT-141C-25-TP

Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
Contextual Info: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.

d2493

Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

c4381

Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Contextual Info: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

D2641

Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

C4517

Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
Contextual Info: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668

Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

transistor C4793

Abstract: c4793 c4793 transistor c4793 datasheet 2sc4793 2SA1837
Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

transistor C4793

Abstract: c4793 C4793 TOSHIBA toshiba c4793 c4793 transistor 2SC4793 2Sc4793 toshiba
Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics

transistor C4793

Abstract: c4793 C4793 TOSHIBA c4793 datasheet transistor 2SC4793 c4793 transistor 2sc4793 2SA1837 2Sc4793 toshiba
Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics

transistor C4754

Abstract: C4754 2SC4754 datasheets 2SC4754
Contextual Info: 2SC4754 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4754 High-Voltage Switching Applications High-Speed DC-DC Converter and Switching Regulator Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 400 V

transistor C4754

Contextual Info: 2SC4754 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4754 High-Voltage Switching Applications High-Speed DC-DC Converter and Switching Regulator Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 400 V

igbt 20A 1200v

Abstract: TRANSISTOR BIPOLAR 400V 20A IRGPH40S
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz

motorola transistor 7439

Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.

AGR09180EF

Abstract: JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

c5047

Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW
Contextual Info: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

TRANSISTOR REPLACEMENT GUIDE

Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.

AGR09180EF

Abstract: JESD22-C101A transistor z14 L
Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global

z24 mosfet

Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global

c879

Abstract: c879 transistor Logarithmic Amplifier detector rf power cell phone detector china mobile phone circuit diagram Diplexer 900 1800 RF Bipolar Transistor china phone BLOCK diagram transistor C013 RF Power detector
Contextual Info: RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 Power Amplifier PA controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For

c879

Abstract: c879 transistor china mobile phone circuit diagram C473 RF142 Block Diagram of 8253
Contextual Info: RF142 Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications The RF142 Power Amplifier PA controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For