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    TRANSISTOR C36 Search Results

    TRANSISTOR C36 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR C36 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 2 — 10 June 2014 Product data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


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    blp15m7160p PDF

    Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


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    blp15m7160p PDF

    BLF888

    Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
    Contextual Info: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


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    blf888dvb-t2j3076technical specifications of dvb-t2 transmitter+6ez90-25ttf 103c4532x7r1e475mt020urf35sot979ez90-25-tp PDF

    Contextual Info: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


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    blf888 PDF

    Contextual Info: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


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    blf888 PDF

    blf888

    Abstract: L33 TRANSISTOR C4532X7R1E475MT020U Capacitor L33 470 dvb-t transmitters RF35 DVB-T transistor amplifier BLF888 nxp ez90
    Contextual Info: BLF888 UHF power LDMOS transistor Rev. 02 — 22 October 2009 Preliminary data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


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    blf888l33 transistorc4532x7r1e475mt020ucapacitor l33 470+5dvb-t transmittersrf35dvb-t transistor amplifierblf888 nxpez90 PDF

    j3076

    Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
    Contextual Info: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W


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    blf888j3076technical specifications of dvb-t2 transmitterj1455+6dvb-t2l33 transistorldmos digitalc4532x7r1e475mt020urf35j1378 PDF

    philips ferroxcube 4c6

    Abstract: BR 78L05 BLF278 iec c13 c14 Philips film capacitors VHF transmitter transistor c36
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1


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    blf278ot262a1philips ferroxcube 4c6br 78l05+4iec c13 c14philips film capacitorsvhf transmittertransistor c36 PDF

    BLF348

    Abstract: MGP231 VHF transmitter circuit atc 17-33 RF push pull power amplifier vhf linear amplifier MGP232 BFL348
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF348 VHF linear push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor FEATURES BLF348 PIN CONFIGURATION • High power gain


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    blf348ot262mgp231vhf transmitter circuit+5atc 17-33rf push pull power amplifiervhf linear amplifiermgp232bfl348 PDF

    philips Trimmers 60 pf

    Abstract: trimmer capacitor ceramic philips ferroxcube 4c6 BLF278 ferroxcube toroid 4312 020 36642 transistor power BR 78L05 transistor c36 balun
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor


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    blf278sc08aot262a1philips trimmers 60 pf+8trimmer capacitor ceramicphilips ferroxcube 4c6ferroxcube toroid4312 020 36642transistor powerbr 78l05transistor c36balun PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D091 BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of 1996 Oct 21 2003 Sep 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 PINNING - SOT262A1 FEATURES


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    m3d091blf278ot262a1sca75+1613524/04/pp23 PDF

    c38 transistor

    Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor


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    blf378sc08aot262a1c38 transistor+9capacitor mkt philipsphilips mkttransistor rf vhfbr 78l05capacitor mktceramic trimmer capacitorl7 diodephilips catalog potentiometer100 pf, atc chip capacitor PDF

    2222 809 09006 capacitor

    Abstract: BLF278 philips ferroxcube 4c6
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor


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    blf278sc08aot262a12222 809 09006 capacitor+1philips ferroxcube 4c6 PDF

    BLF378

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1


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    m3d091blf378ot262a1sca60+1125108/00/03/pp16 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Contextual Info: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


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    blv859an98013sca57222259116641+7222259016629bvc62bd139 transistor circuit diagramblv589c38 transistorrg4muhf amplifier module PDF

    capacitor 0.01 k 400 MKT philips

    Abstract: GS 78L05 N
    Contextual Info: DISCRETE SEMICONDUCTORS BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor


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    blf378sc19aot262a1ot262+3125108/00/03/pp16capacitor 0.01 k 400 mkt philipsgs 78l05 n PDF

    transistor C368

    Abstract: BC368 c368 transistor npn, transistor, sc 103 b c368 MLE327 bc368 equivalent BC369 SC-43A
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 01 2004 Nov 05 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC368


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    m3d186bc368sca76r75/05/pp9+8transistor c368c368 transistornpn, transistor, sc 103 bc368mle327bc368 equivalentbc369sc-43a PDF

    transistor C368

    Abstract: c368 transistor bc368 transistor number code book FREE MLE327
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC368 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 26 2003 Dec 01 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC368


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    m3d186bc368sca75r75/04/pp9+4transistor c368c368 transistortransistor number code book freemle327 PDF

    c39 transistor

    Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    blv950sc08bot262a2scds47+9127061/1100/02/pp16c39 transistortransistor c36c38 transistorphilips 2222-581philips blv950philips resistor 2322 156philips 2222 052transistor c37 PDF

    C3691

    Abstract: C36916 C3692 C36925 C369 transistor BC369 transistor C369 BC369-25 C369 marking code 43a
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Nov 20 2004 Nov 05 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC369


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    m3d186bc369bc369-16sca76+10r75/05/pp12c3691c36916c3692c36925c369 transistortransistor c369bc369-25c369marking code 43a PDF

    C36916

    Abstract: transistor C369 c3691 C36925 BC369 C3692 C369 transistor MLE295
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC369 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 26 2003 Nov 20 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC369


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    m3d186bc369bc369-16bc369-25+8sc-43c36916c36925transistor c369c3691c3692c369 transistormle295 PDF

    J307 FET

    Abstract: AGR19180EF JESD22-A114 agere c8
    Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


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    agr19180efhz--1990ds04-080rfppds02-377rfpp+3j307 fetjesd22-a114agere c8 PDF