TRANSISTOR C1237 Search Results

BUX21

Abstract: SGS-Thomson BUX21
Contextual Info: • I 7 ^ 2 3 7 o p a a ^ B ? a ■ H ~ " - 3 3 - i s _ r = 7 SCS-THOMSON * 7# B U X 21 S G S- TH OMSON 3ÜE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX21 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, inten­

transistor c1237

Abstract: TSD250N05V
Contextual Info: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250

Contextual Info: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE

SGSP579

Contextual Info: 3QE D • T ^ E a? 0030071 4 ■ -\3 ^ s r- SGS-THOMSON HLiÊTTMôÊi s 6 S TH0MS0N SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 VDSS 500 V f*DS on 0.7 Q •d 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE -9A FOR UP TO 350WSMPS

STHV82

Abstract: STHV82FI
Contextual Info: T'îS'îaS? £ t7 0 0 4 5 ^ 0 357 • S G T H SGS-THOMSON L i « ! STHV82 STHV82FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV82 STHV82FI ■ . . . . . ■ V dss R DS on Id 800 V 800 V <2Q < 2 Ü 5.5 A 3.6 A TYPICAL RDS(on) = 1.65 £2

23N05

Abstract: stk 0055 23n06 23N05L
Contextual Info: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V

Contextual Info: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

A80N

Contextual Info: / I T * 7# S G S -T H O M S O N M œ m iO T tM O iË S S T V 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STV3NA80 • . . . . . . V dss RDS on Id 800 V < 4 .5 Q 3.1 A TYPICAL Rc>s(on) = 3.5 Cl ± 30V GATE TO SOURCE VOLTAGE RATING

STP11N06

Abstract: D073434 Vk-10V
Contextual Info: r Ä T z S G S -T H O M 7 # S O N KülD gl3 l [ L I C T i B ! I B ® S S T P 1 1 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP11N06 60 V • . . . . . . . RDS(on < 0.25 Id a 11 A TYPICAL RDS(on) = 0.21 Q AVALANCHE RUGGED TECHNOLOGY

tcm600

Abstract: STD8N10L tcm600-400 DIODE OA-200
Contextual Info: f Z ^ 7 7 S C S - T H O M S O N / r a n e ^ iiL iC T i iD B i S T D 8 N 1 0 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD8N10L V dss R D S (o n Id 100 V < 0.33 n 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY

STP8N50

Contextual Info: 7 ^ 2 3 7 £ Z T * 7# QD4b33b SD Ì • SGTH S G S -T H O M S O N [M tM tiL IO T « ! S T P 8 N 5 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP8N50XI . ■ . . . ■ . dss 500 V R D S {on Id < 0.85 n 4.5 A TYPICAL RDS on) = 0.74 Q AVALANCHE RUGGED TECHNOLOGY

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

Diode SMD ED 7ca

Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Contextual Info: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

Contextual Info: £=7 SGS-THOMSON * 7 lü W 1 . iilIJ iC T W I l g ê _ L 6 2 0 4 DMOS DUAL FULL BRIDGE DRIVER ADVANCE DATA • SUPPLY VOLTAGE UP TO 48V ■ R ds on 1.2Q (25°C) . CROSS CONDUCTION PROTECTION . THERMAL SHUTDOWN ■ 0.5A DC CURRENT

scs thyristor

Abstract: thyristor firing circuits scr firing gas ignition Thyristor 220V FLC02-200D lighter ignitor capacitor discharge ignition scr IDT Thailand Transistor k2 thyristor pin diagram
Contextual Info: r z T SG S-TH O M SO N FLC02-200D rao œ o iL iieT rœ m ei Application Specific Discretes A.S.D. FIRE LIGHTER CIRCUIT FEATURES • SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION ■ DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION

Contextual Info: SCS-THOMSON STV7778 DEFLECTION PROCESSOR FOR MULTISYNC MONITOR HORIZONTAL • DUAL PLL CONCEPT ■ SELF-ADAPTIVE 30 TO 65kHz ■ X-RAY PROTECTION INPUT ■ DC ADJUSTABLE DUTY-CYCLE ■ INTERNAL 1st PLL LOCK/UNLOCK IDENTIFI­ CATION ■ WIDE RANGE DC CONTROLLED H-POSITION

C1237

Abstract: LA 4972 c1237 ha MKT 10uf 63v L4970 L4972 L4972D S020 h89a ui35
Contextual Info: 7=12^237 DD225MM 3 H T S 8 - ll- 3 > l L4972 L4972D S G S - T H O M S O N D O ^ O iK L d O I F lH lO lM D O i S G S-THOMSON 30E » 2A SWITCHING REGULATOR A D VA N C E DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE

L6234D

Abstract: transistor ti p80 copper pcb l6234 AN467 AN668 AT25 L6234PD MO-166 Application Note AN467
Contextual Info: SGS-THOMSON L6234 ;y THREE PHASE MOTOR DRIVER ADVANCE DATA SUPPLY VOLTAGE FROM 7 TO 52V 5A PEAK CURRENT Rds o n 0.3£2 TYP VALUE AT25°C CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVER OPERATING FREQUENCY TO 50KHz THERMAL SHUTDOWN INTRINSIC FAST FREE WHEELING DIODES

c1237 ha

Contextual Info: SGS-1H0 MS0 N M » ilL Iig T O [ l] < g S _ L 6 2 3 4 ^ 7/. THREE PHASE MOTOR DRIVER ADVANCE DATA SUPPLY VOLTAGE FROM 7 TO 52V 5A PEAK CURRENT Rds o n 0.3i2 TYP VALUE AT 25°C CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVER OPERATING FREQUENCY TO 50KHz

SD1487

Contextual Info: / I T * 7 # . S G S -IH O M S O N « i i m i ê T i w SD1487 * ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • i ■ a . . 30 MHz 12.5 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION Pout = 100 W MIN. WITH 12.0 dB GAIN PIN CONNECTION 4 a 1 o f jO

L9824D

Abstract: 4b2 zener diode DIP20 L9824 S020
Contextual Info: ¿ 7 7 S G S -1H 0 M S 0 N ^ 7 # . R ilK g M ilL llg T r M K g L9824 OCTAL PARALLEL LOW SIDE DRIVER ADVANCE DATA • OPERATING DC SUPPLY VOLTAGE RANGE 5 V TO 25V ■ SUPPLY OVERVOLTAGE PULSE UP TO 40V ■ VERY LOW STANDBY QUIESCENT CUR­ RENT 100|xA ■ EIGHT BIT PARALLELSTRUCTURE WITH ME­

F463 transistor

Abstract: IF463 F463 SGSF463 H33-I3 SGSIF463-SGSF563 i f463 npn 1000V 100a SGS transistors F-463
Contextual Info: 7 ^ 2 3 7 QPS^SQTg SGS-THOMSON iL iO T * ! SGSF463 SGSIF463-SGSF563 S G S - T H O M S ON 3QE ]> FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH SWITCHING SPEED NPN POWER TRANSISTORS . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­

L4925

Contextual Info: ¿ = 7 *7 t. S G S -T H O M S O N M M IIllLlig'B liM D Igi_ L4925 VERY LOW DROP VOLTAGE REGULATOR • OPERATING DC SUPPLY VOLTAGE RANGE 6VT028V ■ TRANSIENT SUPPLY VOLTAGE UP TO 40V ■ EXTREMELY LOW QUIESCENT CURRENT ■ HIGH PRECISION OUTPUT VOLTAGE

Contextual Info: ¿ = 7 SG S-THO M SO N “ •/Ä., UA776 RäD g |[LI(gra©[fflD(gi PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS ■ MICROPOWER OPERATION ■ NO FREQUENCY COMPENSATION REQUIRED ■ WIDE PROGRAMMING RANGE ■ HIGH SLEW RATE ■ SHORT-CIRCUIT PROTECTION