TRANSISTOR C117 Search Results

d1297

Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.

d1308

Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.

d1308

Abstract: D1297 2SK2355 2SK2356 2SK2356-Z MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel in millimeter MOS Field Effect Transistor designed for high voltage switching

d1308

Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

IRGPC40FD2

Abstract: ge c122 transistor c117
Contextual Info: hrtemational pd-smus Big Rectifier_ IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

C11892E

Abstract: D12971E D1297 2SJ494 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2

a1037

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power

C11892E

Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3

transistor c124

Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

C11892E

Abstract: TEA-1037 D1297
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

transistor c124

Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
Contextual Info: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 10 .0 ± 0.3

transistor c124

Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
Contextual Info: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

C10535E

Abstract: C10943X C11531E MEI-1202 PA1700A TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in millimeter Transistor designed for DC/DC converters and power 8 5 management of notebook computers.

C124 EST

Abstract: transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2
Contextual Info: PD - 9.1113 International ïôr Rectifier IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = • Switching-loss rating includes all “tail" losses • H EX FR E D soft ultrafast diodes • Optimized for medium operating frequency 1 to

c1173Y

Abstract: C1173-Y TO220 Semiconductor Packaging C1173-O
Contextual Info: KSC1173 KSC1173 Low Frequency Power Amplifier Power Regulator • Collector Current : IC=3A • Collector Dissipation : PC=10W TC=25°C • Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

2SK2941

Abstract: C10535E C10943X C11531E MEI-1202 MP-25 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. RDS on 1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)

transistor 2SK2941

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T his product is n-Chanel MOS Field Effect Transistor designed high current switching application. FEATURE • Low On-Resistance RDS on i = 14 m il Typ. (V g s = 10 V, Id =18 A)

transistor c117

Abstract: JAN2N3055 C116 2N3232
Contextual Info: SOLITRON DEVICES INC TSD D ~ X - g >\ -o \ fl3bflbOS 0002TG7 7 ^ [^ © ü © ? © A T M ,© * MEDIUM VOLTAGE a lit r o • Devices, inc CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 45) CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.

transistor c117

Abstract: JAN2N3055 2N3232
Contextual Info: MEDIUM VOLTAGE Devices. Inc. CHIP NUMBER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 45 CONTACT METALLIZATION B a se. Emitter and Collector Solder Coated 9 5 /5 % lead /tin. A SSEM B LY R EC O M M E N D A TIO N S It is advisable that: a ) the chip b e assem bled in a reducing g a s atm osphere.

2SK129

Abstract: PC1099CX PC1094 *c1094g 2SK1295 tea 1503 pc1094c1094g TEA-578 TEA-572 2SK1295 NEC
Contextual Info: データ・シート MOS形電界効果パワー トランジスタ MOS Field Effect Power Transistor 2SK1295 Ｎチャネル パワーMOS FET スイッチング用 工業用 外 形 図（単位：mm） 2SK1295は，Ｎチャネルエンハンスメント形パワーMOS

2SJ463A

Abstract: C10535J 2SJ463A2
Contextual Info: データ・シート MOS形電解効果トランジスタ MOS Field Effect Transistor 2SJ463A PチャネルMOS FET スイッチング用 外形図（単位：mm） ○ゲートを2.5 Vで駆動できる。 2 3 1 ○ゲートカットオフ電圧が低い。

transistor 669A

Abstract: H669A 2SD669AHS669AH669A C117AJ-00 669A H669 C117A 2SD669A HS669A transistor 160v 1.5a npn
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2

2SJ461

Abstract: ITT DIODE W7 MARKING J1A C10535J C10943X marking JE FET D1073
Contextual Info: • S /— h MOSJfê M O S Field Effect Transistor 2SJ461 MOS FET r§ jâ L - ^ "f y 2 S J 4 6 1 Ü 2 . 5 V H 2 Ì Ì J ^ i ' 7 ° C O P 5 1 + ^ ^ M i M O S F E T ? ' <fe U , t e l B E T ' l g l i l T # , U £ - t t A , 0 f f ii/ L r t i h A ' O h* 7 - f