TRANSISTOR C 718 Search Results

BUX20

Abstract: bux 716 transistor BUX
Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

MMT806

Abstract: MMT808
Contextual Info: MMT806 SILICON M ICROM INIATURE NPN SILICON ANNULAR TRANSISTOR MICRO POWER SER IES NPN SILICON SWITCHING TRANSISTOR . . . designed for high-speed, low-power switching circuits. • DC Current Gain @ Ultra Low C urrent— • High Current'Gain — Bandwidth Product —

an5296

Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
Contextual Info: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Transistor BFR 96

Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
Contextual Info: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar

transistor 1548 b

Abstract: transistor a 1707 BFQ136 NPN/acsl 086 s
Contextual Info: P h ilip s S e m ic o jid u c to r e ^ H ttiS 3 T 31 0 0 3 1 ti7 2 • APX P rod uctspecification NPN 4 GHz wideband transistor ^ BFQ136 N b^E J> AUER PHILIPS/DISCRETE PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT 122A envelope with a ceramic cap. All leads are isolated

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

transistor c 5855

Abstract: PTB23006U SC15
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U FEATURES QUICK REFERENCE DATA • Very high power gain Microwave performance up to T mb = 25 °C in a common-base class C • Diffused emitter ballasting resistors improve ruggedness

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Dec 31,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

D1955NL

Abstract: D1955
Contextual Info: S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

ULN2803

Abstract: LN2803A-U IC ULN2803 IC 2804 driver ULN2803 la 7184 ULN2804R ULN2804 LN2803 OF ULN2803
Contextual Info: M MOTOROLA. -Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this fam ily of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, C M O S or P M O S /N M O S ) and the h ig h e r c u rre n t/v o lta g e

2-10P1B

Abstract: 2SK1600
Contextual Info: T O SH IB A cìOtì7SSG 002331=1 SMI TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 600 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • 2SK1600 INDUSTRIAL APPLICATIONS

bux21

Abstract: emetteur bux THOMSON P6021 bux 722 JSE10 amplificateur puissance
Contextual Info: *B U X 21 NPN S IL IC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA TR A N S IS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt couran t

Contextual Info: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p .

Contextual Info: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)

MRD300

Abstract: MRD310
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD300 MRD310* P h o to D e te c to rs Transistor Output * M o to ro la Preferred D e v ic i The M RD300 and M RD310 are designed for applications requiring radiation se n sitivity and stable characteristics. PHOTO D ET EC T O R S

2N2297

Abstract: transistor 2N2297 transistor w 431
Contextual Info: 2N2297 PHILIP S IN TE RN AT IO NA L 71100 2b SbE D 00425T4 bbT • PHIN SILICON PLANAR EPITAXIAL TRANSISTO R N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

ra5b

Abstract: CA3046E transistor EM 3045 am ca3046
Contextual Info: ff! H a r r is CA3045 CA3046 General Purpose N -F -N Transistor Arrays August 1991 Description Features • T w o M a tch ed T ransistors: V jje M a tch ed In put O ffs e t C u rre n t 2fiA M ax at lc = 1m A The CA3045 and CA3046 each consist of five general

MRD300

Abstract: 716 Motorola MRD310 light sensitive photo diode To18 transistor motorola reliability color sensitive PHOTO TRANSISTOR Rise time of photo transistor 716 transistor
Contextual Info: ROLA SC D I O D E S / O P T O L4E T> b 3 b ? Z 5 5 OOflb77b TIT • MOT? MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RD300 M R D 310* P h o to D e te c to rs Transistor Output •Motorola Preferred Device The MRD300 and MRD310 are designed fo r applications re qu irin g radiation sensitivity

ns8002

Abstract: 2sc710 transistor transistor 2SC710 2SC710 C 2SA561 2SC710 2SC710-15 138B LT 735 2SA562
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English