TRANSISTOR C 5339 Search Results

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

FCK 111

Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
Contextual Info: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê

IRG7PH42U-EP

Abstract: 124 transistor
Contextual Info: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42UPBF

Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Contextual Info: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

irg7ph42upbf

Abstract: marking code 5339
Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

b0958

Abstract: JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246
Contextual Info: v—S •S' î a - ê - h ^ Com pound Transistor A N I L4M # ftfó m i t o 7 / M x i £ i / i £ R i = 47 f t j t kQ , L T v ^ R 2= 4 7 ( T O î : mm t o kû) c O A A 1 L 4 M ¿1 =1 > 7 ° U / > ? U - C fë ffl X " £ £ t e ( T a = 25 ° C ) g II a u 9 9

RM4T

Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Contextual Info: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ

2SD1518

Abstract: 5AE0 2SD1581 C3052
Contextual Info: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^

Contextual Info: Compound Transistor G Σ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ f*aM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —'* Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9

ni3ti

Abstract: LU024 M10258 IS333 k 6115 FK 231 SA 220 UI02 S333 T108 T460
Contextual Info: NEC m = f = r i v « r • 7— S • 5 /— h Compound Transistor x FN1L3M it H o ^ 'M M T x f f i i j t i - r t i l L T v ' i t c ¥ f i : mm 2 . 8 ± 0.2 1.5 (R i = 4.7 kQ, R2= 4.7 kQ) O — V v V R O FA1L3M t =1 > 7 °'! / > 7 ') T l Ì f f l T 'è

Transistor BC 227

Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177
Contextual Info: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 1*1Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T * íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o

Contextual Info: Outdoor-VRp-ILc-15000/30000-5339 ~ 15/30kVA, 400 vac delta,230/400 vac wye Outdoor VRp-ILc Series 203 Precision Voltage Regulator + Isolation Transformer Outdoor International Precision voltage regulator Isolation transformer VRp-ILc Outdoor VRp-ILc models

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

stk*400-050

Abstract: STK400
Contextual Info: Ordering number : EN4822A Thick Film Hybrid IC STK400-290 AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be

STK401-340

Abstract: STK401-140 stk401-200 STK400-290 stk400 200 STK400-110 STK400-010 STK400-020 STK400-030 STK400-040
Contextual Info: Ordering number : EN4822A Thick Film Hybrid IC STK400-290 AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

Contextual Info: Ordering number : EN4822A Thick Film Hybrid 1C _ STK400-290 IsaH yo I AF Power Amplifier Split Power Supply (50W + 50W + 50W min, THD = 0.08%) Package Dimensions Overview N ow , thick-film audio pow er am plifier ICs are available

2n5339

Contextual Info: MOTOROLA SC XSTRS/R F 13E D | L3L7254 0084542 1 | 2N5336 thru 2N5339 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MEDIUM-POWER NPN SILICON TRANSISTORS 5 AM PERE POWER TRANSISTORS NPN SILICON . . . designed for switching and wide band amplifiar applications. • Low Collector-Emitter Saturation Voltage —

stk*470 090

Abstract: stk 490 070 4822a stk 490 040 stk*0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130
Contextual Info: Ordering number : EN4022A Thick Film Hybrid 1C STK400-290 No. 4822A AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) I Package Dimensions Overview Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be

LT 5337

Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
Contextual Info: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.

V5592

Abstract: TOP-66 5598 transistor 8617 diode DIN 53505 marking code to3 diode marking J5P SOT TO-126 mounting V7387 8630F
Contextual Info: ASSMANN Die-cast-Heatsinks Electronic C om ponen ts Thermal Conductive Ceramic Pads Technical data Applications: Electro- and electronic-industry i. e. computers, TV sets, VTR, medical equipment, measuring instruments, motor car- and machineindustry, photovoltanie, aviation.