TRANSISTOR C 380 Search Results

HF8-28S

Abstract: ASI10736
Contextual Info: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B

HF50-12F

Abstract: ASI10596
Contextual Info: HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely

VHB50-28F

Abstract: ASI10728
Contextual Info: VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG

st8550d

Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
Contextual Info: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

VHB40-28F

Abstract: TRANSISTOR j412 transistor J132 J442 J142 J705 J412 ASI10726 j132
Contextual Info: VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability.

VMB40-12S

Abstract: ASI10744
Contextual Info: VMB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB40-12S is Designed for 12.5 V, Medium Band Class C Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C E E • Common Emitter • PG = 10 dB at 40 W/175 MHz • Omnigold Metalization System

VMB10-12S

Abstract: ASI10742
Contextual Info: VMB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB10-12S is Designed for 12.5 V, Medium Band Class C Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C E E • Common Emitter • PG = 13 dB at 10 W/88 MHz • Omnigold Metalization System

HF20-12S

Abstract: ASI10595 20WPEP
Contextual Info: HF20-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF20-12S is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. PACKAGE STYLE .380 4L STUD .112x45° A C FEATURES: B E E • PG = 15 dB min. at 20 W/30 MHz

VHB25-12S

Abstract: 8-32 UNC-2A ASI10715 ic c 838 transistor 813 TRANSISTOR S 838
Contextual Info: VHB25-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: E ØC E B D MAXIMUM RATINGS H I J G #8-32 UNC-2A 4.0 A IC C B • Common Emitter

BD376

Contextual Info: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD375, BD 377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 50 V : BD378 - 75 V : BD380 - 100 V - 45 V : BD378

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

forward converter uc3844

Abstract: WIMA MKS 3 HIGH FREQUENCY Transformer ec35 Distribution transformer EC35 PC40PQ32 schematic uc3844 EC35 TRANSFORMER pme285mb AN1108 TDK RM6
Contextual Info: . Order this document MOTOROLA by A N 11 0M SEMICONDUCTOR APPLICATION NOTE A N 1108 Design Considerations for a Two Transistor, C urrent Mode Forward C onverter By Kim Gauen Motorola Semiconductor Products Sector Discrete Systems Engineering This application note describes the design of a 150 W, 150

VMB40-12F

Abstract: ASI10743 216H
Contextual Info: VMB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VMB40-12F is Designed for 12.5 V, Medium Band Class C Applications. B .112 x 45° A Ø.125 NOM. FULL R J FEATURES: .125 • Common Emitter • PG = 10 dB @ 40W/175MHz

VHB10-12S

Abstract: ASI10713 vhb10
Contextual Info: VHB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold Metalization System

ARU300

Abstract: ASI10549 AUR300
Contextual Info: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz

VLB10-12F

Abstract: ASI10732
Contextual Info: VLB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold Metalization System

Contextual Info: H IW «' « 2 it C r O S G iT ii V i r g i n 140 Commerce Drive M ontgom eryvilie, PA 18936-1013 le t: 215 631-9840 ^ _ . _ . _ _ SD1018-6 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS . » « . . » » FM GLASS C TRANSISTOR FREQUENCY 175MHz

IRG4PC40spbf

Abstract: 6.2a 600v irf IRG4PC40 irg4pc IRG4PC40S 035H
Contextual Info: PD -95171 IRG4PC40SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4PC40S

Contextual Info: PD 91465B IRG4PC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

VLB10-12S

Abstract: ASI10734
Contextual Info: VLB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold Metalization System

NEC Ga FET marking L

Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO

S0146

Contextual Info: Hm -ft.ix -m m "140Commerce Drive m iC fO S B tU l Montgomeryviile, PA 18936-1013 I^ Œ h SÊ b s Î * Tel: 215 631-9840 - S D 1 4 6 8 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 23V POWER OUT 70W POWER GAIN

HF5-12S

Abstract: ASI10591 HF512S
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP