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    TRANSISTOR C 2500 Search Results

    TRANSISTOR C 2500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR C 2500 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mcl610

    Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
    Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR


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    MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 PDF

    2225-4L

    Contextual Info: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and


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    2225-4L 2225-4L PDF

    10E-D3

    Abstract: TLP532 E67349 TLP531
    Contextual Info: TOSHIBA TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 PROGRAMMABLE CONTROLLERS A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a


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    TLP531 TLP532 TLP531, TLP532 2500Vrms UL1577, E67349 10E-D3 E67349 PDF

    Contextual Info: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


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    QCA75A/QCB75A40/60 E76102 A75A60 B75A40 B75A60 QCA75A/QCB75A PDF

    Contextual Info: TRANSISTOR MODULE QCA200AA120 Q C A 200 A A 12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA200AA120 7T11243 0QD2D13 PDF

    Contextual Info: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA75AA100 E76102 100msec 00V-----IB, PDF

    Contextual Info: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­


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    QCA200A40/60 400/600V QCA200A PDF

    Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 M Q C A 1O O A A 10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA100AA100 E76102 PDF

    Contextual Info: TOSHIBA TLP570,TLP571 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI PR7Í1 T I PR71 PRO GRAM M ABLE CONTROLLERS A C /D C - IN P U T MODULE SOLID STATE RELAY The TO SH IBA TLP570 and TLP571 consist of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared


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    TLP570 TLP571 TLP571 2500Vrms UL1577, E67349 TLP570 PDF

    Contextual Info: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


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    QCA200AA100 E76102 QDQ2Q12 PDF

    TLP521

    Abstract: TLP521-4 TLP521-1 TLP521-2 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr
    Contextual Info: TOSHIBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.


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    TLP521 TLP521-2JLP521 TLP521-1, TLP521-2, TLP521-4 TLP521-2 TLP521-4 2500Vrms UL1577, TLP521-1 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr PDF

    D 1437 transistor

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


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    2SC5004 D 1437 transistor PDF

    Contextual Info: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter


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    MMPQ3725 SOIC-16 PDF

    BUK427-600B

    Abstract: 18-SO BUK427-600 d0411
    Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


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    BUK427-600 711Dfl2t. D0411S0 -SOT199 BUK427-600B 18-SO d0411 PDF

    Contextual Info: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting


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    TLP572 TLP572) TLP572 2500Vrms UL1577, E67349 RATI72 PDF

    lt 715 1111

    Abstract: st zo 607
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)


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    PDF

    t25000

    Abstract: QM10HB-2H
    Contextual Info: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j


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    QM10HB-2H E80276 E80271 t25000 QM10HB-2H PDF

    k426

    Abstract: LD 25 V BUK426-800A transistor bu
    Contextual Info: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    BUK426-800A/B 711005t. BUK426 -600A -800B PINNING-SOT199 k426 LD 25 V BUK426-800A transistor bu PDF

    Contextual Info: TLP550 3aAÄAs IRED & PHOTO-IC TENTATIVE DEGITAL LOGIC ISOLATION. 8 7 6 c 3 4 LINE RECEIVER FEEDBACK CONTROL. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. 1 2 TRANSISTOR INVERTOR. TLP550 constructs a high emitting diode and a one chip photo diode-transistor.


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    TLP550 TLP550 2500Vrms E67349 --10C PDF

    Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.


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    2N6678 2N6678 PDF

    Contextual Info: TOSHIBA TLP572 TO SHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR TI P R 7 7 • ■ HT M P RO G R AM M ABLE CONTROLLERS A C /D C -IN P U T M O DU LE SOLID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting


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    TLP572 TLP572 2500Vrms UL1577, E67349 100mA PDF

    100-A60

    Abstract: transistor k 620 transistor K 603 k 30 transistor OBB100A40 transistor 603 603 transistor k100a sanrex
    Contextual Info: TRANSISTOR MODULE QCA100A/QBB100A40/60 Q C A 10 0 A and Q B B 1 OOA a dual D a rlin ­ gton power transistor module w ith two high sp«?d. high power D arlington transis­ tors. Each transistor has a reverse p a ra l­ leled fast recovery diode. • QCAIQOA*-Series-connected type


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    QCA100A/QBB100A40/60 QBB10OA 00A--Series-connected QBB100A 400/600V E76102 100A40 100A60 QBB10DA60 01A40 100-A60 transistor k 620 transistor K 603 k 30 transistor OBB100A40 transistor 603 603 transistor k100a sanrex PDF

    ZO101

    Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 • Ic Collector current. • V c ex Collector-em itter v o lta g e . 1200V • hFE 30A DC current g a in . 5 • Insulated Type


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    QM30HQ-24 E80276 E80271 ZO101 PDF

    nf 0036 diode

    Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
    Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS


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    CM300HA-28H CM400HA-28H CM600HA-28H CM800HA-28H CM1000HA-28H nf 0036 diode Diode 15630 cm50dy-28 CM1200HA-34H PDF