TRANSISTOR C 2500 Search Results

2225-4L

Contextual Info: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and

BUK427-600B

Abstract: 18-SO BUK427-600 d0411
Contextual Info: 7 ^ 3 9 - / / Philips C om ponents Data sheet status Product specification date of issue March 1991 PHILIPS BUK427-600B PowerMOS transistor INTERNATION GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

Contextual Info: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)

transistor MAR 825

Abstract: mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65
Contextual Info: Tem ic BFQ67 S e m U o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low-noise. small-signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain

diode D83

Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
Contextual Info: fOMEREX KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i C f h mB O t B Dual Darlington Transistor Module 200 Amperes/600 Volts O U T L I N E DR A WI N G Description: The Powerex High-Beta Dual Darlington Transistor Modules are

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: MARKTECH INT ERN AT IO NAL ~fl7 dF | 57^55 O D D D 1 DÖ □ TRANSISTOR COUPLER 87D 00108 5799655 M A R K T E C H INTERNATIONAL 4N35 GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • A C LIN E/D IG IT AL L O G IC ISO LA T O R • D IG ITAL LO G IC/D IG IT A L L O G IC ISO LA T O R

2SB1474F5

Abstract: 2SB147
Contextual Info: h7 > V O C D $ /Transistors 4 4 7 4 C 2SB1474F5 C i t : ^ ^ '> 7 ^ U - t ^ P N P y |J = i > h 7 > y ^ ^ Epitaxial Planar PNP Silicon Transistor Darlington ffilM l^Jiltnffl/Low Freq. Power Amp. Wfö^äslSI/Dimensions (Unit : mm) • fc * 1) # - v > b hFE ^ ¡ a i- 'o

B334

Abstract: diode b334 1DI300M-120
Contextual Info: DI300M-120 /< 7_ =l - \ y s : Outline Drawings 10 13 21 r r T POWER TRANSISTOR MODULE * Features • High A rm S hort C ircu it C apability • h F E ^B iv,' • 7 l) — H igh DC C urrent Gain U > ? ? ' % ' — KrtJR • IfeiiiJK Including F re e w h e e lin g Diode

ic-vn

Contextual Info: Temic BFP67/BFP67R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. jk Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

Contextual Info: S DM8401 S amHop Microelectronics C orp. J uly 23, 2004 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

2SC2340

Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Contextual Info: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

Transistor BC 457

Abstract: bc 457 3000 0442 bc 457 datasheet IRF530S IRG4BC40WL IRG4BC40WS IRL3103L DSA0031076
Contextual Info: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: as I m m I •■ ■ J une 1999 F A IR C H IL D M ICQNDUCTOH tm NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-C hannel Features enhancem ent mode pow er field effect ■ transistors are produced using Fairchild's proprietary, high cell

ir 847p

Abstract: 3010P-K Y744 CNY181V crt5000 2106U T1102G T1103G DT1103 64bcn
Contextual Info: Tem ic S e m i c o n d u c t o r s Optoisolators C haracteristics V io Package Type VRMS CTR V BRCEO Ip = I0 m A IC=1 m A % V @ Ip and Ic V CEsat ton / toff Ic Rl =100 q V mA mA |xs ! mA 6 Pin Optoisolators - with Transistor Output ^ 1 4 N 2 5 2i 3750 100020)

IRGPC30FD2

Contextual Info: PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: Tem ic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF am plifier up to G H z range. Features • H igh pow er gain • Low noise figure • High transition frequency M arking: FE Plastic case SO T 143 1 = C ollector; 2 = E m itter; 3 = Base; 4 = Em itter

NEC Ga FET marking L

Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO

FOD250L

Abstract: FOD050L FOD050LR1 FOD050LR2 FOD053L FOD250LS FOD250LSD FOD250LT VDE0884
Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

IRF1010 E DATASHEET

Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter