TRANSISTOR BW 51 Search Results

TCHT1130

Abstract: Ex-90C
Contextual Info: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ

Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

2N4261

Abstract: 2N4261UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

Contextual Info: ASSP forDTS BIPOLAR Prescaler with VCO Dual-Modulus, 1.0 GHz MB551 DESCRIPTION The MB551 is a dual-modulus prescaler incorporating a voltage controlled oscillator (VCO) used for 900-MHz band frequency synthesizers. The MB551 consists of: a Colpitts oscillator with grounded base capacitor, a buffer

Contextual Info: 2 'S » FUJITSU July 1990 Edition 1.0 DATA SH EET • MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual m odulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.

mb551

Abstract: colpitts oscillator construction TEL Prober MURATA VCO Series Fujitsu 10ghz transistor UCN103C sin 3545 transistor
Contextual Info: July 1990 Edition 1.0 FUJITSU DATA SHEET MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual modulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

Contextual Info: Fairchild Im aging Sensors CCD326A 256/512-B it Analog Shift Register Charge Coupled Device FEATURES • Electrically variable analog delay line for audio and video applications. ■ Excellent bandwidth at video and audio rates due to burled channel technology.

block diagram of ca3130

Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
Contextual Info: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: IC1 CA3130 CA3130 peak detector pin diagram of IC ca3130 ca3130 pin diagram of ca3130 ca3130 equivalent ca31305 block diagram of ca3130 CA3130 as a low pulse generator
Contextual Info: CA3130 S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features Description • MOSFET Input Stage Provides: - Very High ZI = 1.5 TΩ 1.5 x 1012Ω Typ. - Very Low II = 5pA Typ. at 15V Operation = 2pA Typ. at 5V Operation

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: tektronix 2230 CA5130T CA5130M CA3130 CA3130A CA5130 CA5130A CA5130AE CA5130AM
Contextual Info: CA5130 S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage - Very High Zl . . . . . . . . . . . . . 1.5TΩ 1.5 x 1012Ω Typ. - Very Low ll . . . . . . . . . . . . 5pA Typ. at 15V Operation

CA3130

Abstract: CA3130 peak detector IC1 CA3130 CURRENT TO VOLTAGE CONVERTER about the IC ca3130 CA3130 data sheet ca3130 equivalent IC1 CA3130 ca3130 equivalents CA3130 as a low pulse generator 2N3055 inverter schematic diagram
Contextual Info: CA3130, CA3130A Data Sheet August 1, 2005 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: CA3130 peak detector about the IC ca3130 CA3130 CA3130 data sheet 2n3055 pinout ca3130 equivalent operational amplifier discrete schematic timer astable multivibrator 2n3055 terminals of 2n3055
Contextual Info: CA3130, CA3130A Data Sheet October 2002 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are

SFH617-3

Abstract: vfd circuit diagram for siemens siemens VFD availability siemens GR 60 rectifier siemens GR 40 rectifier TDA16822 AN-SMPS-1683X-1 N27 OL inductor flycal excel sfh617
Contextual Info: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r

TDA16822

Abstract: ferrite core transformer calculation formula siemens GR 60 rectifier AN-SMPS-1683X-1 B41826 flycal TDA16831 SFH617-3 siemens VFD availability epcos ferrite
Contextual Info: Version 1.3 , Sept. 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply

siemens GR 60 rectifier

Abstract: B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 TDA1683X SFH617-3 siemens GR 90 rectifier
Contextual Info: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r

mosfet transistor 20MHZ 5A

Abstract: apm2014n APW7058 VDRIVE2 APM2014 200v dc 10A buck converter APM2014N mosfet APM2055N STD-020C t 3301 nk
Contextual Info: APW7058 Synchronous Buck PWM and Linear Controllers Features • General Description Provides Two Regulated Voltages The APW7058 integrates one synchronous-rectified Buck PWM controller and one linear controller to provide two regulated voltages for graphics cards and

Contextual Info: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient

transistor 9567

Contextual Info: What H E W L E T T WXM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 513 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 513 Series is a thin-film bipolar RF amplifier that uses

Contextual Info:  UTRON UT66L168 E /UT66L168(I) 512K X 16 BITS LOW POWER CMOS SRAM Rev. 1.1 FEATURES GENERAL DESCRIPTION „ Access time : 60/70ns (max.) „ CMOS low operating power Operating current : 18mA@ 10MHz (Typ) Standby current : 50uA (Typ) „ Power supply voltage : 2.5V~3.3V

12v 60W subwoofer CIRCUIT DIAGRAM

Abstract: 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 200W subwoofer CIRCUIT DIAGRAM TA0103A amidon T200-2 MUR120T3 TRIPATH ta0103a diagram for a 12v 250w power amplifier 250w audio amplifier circuit diagram 12v single supply 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA0103A Stereo 250W 4Ω Class-T Digital Audio Amplifier Driver using Digital Power Processing (DPPTM) Technology Technical Information Revision 3.3 - June 2000 GENERAL DESCRIPTION The TA0103A is a 250W continuous average (4Ω), two channel Amplifier Driver