TRANSISTOR BW 51 Search Results

TCHT1130

Abstract: Ex-90C
Contextual Info: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ

7474 ic

Abstract: IC 7474 IC 7474 datasheet 4044 transistor nf 7474 IC datasheets dionics 7474 features of ic 7474 10PA
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIL-4044 MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Description: Dual NPN transistors, Dielectrically Isolated,

7474 ic

Abstract: IC 7474 IC 7474 datasheet 7474 IC datasheets datasheet of 7474 ic 7474 7474 ic datasheet IC 7479 Dionics pin IC 7474
Contextual Info: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DI-4044 SOIC MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Dielectrically Isolated Small 8-pin SOIC Package High Operating Temperature

Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090
Contextual Info: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

2N4261

Abstract: 2N4261UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

Contextual Info: ASSP forDTS BIPOLAR Prescaler with VCO Dual-Modulus, 1.0 GHz MB551 DESCRIPTION The MB551 is a dual-modulus prescaler incorporating a voltage controlled oscillator (VCO) used for 900-MHz band frequency synthesizers. The MB551 consists of: a Colpitts oscillator with grounded base capacitor, a buffer

Contextual Info: 2 'S » FUJITSU July 1990 Edition 1.0 DATA SH EET • MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual m odulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.

mb551

Abstract: colpitts oscillator construction TEL Prober MURATA VCO Series Fujitsu 10ghz transistor UCN103C sin 3545 transistor
Contextual Info: July 1990 Edition 1.0 FUJITSU DATA SHEET MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual modulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.

CA3600E

Abstract: 2n3055 pinout terminals of 2n3055 2N3055 inverter schematic diagram 2n3055 voltage regulator HCA10014 1A Dual Power Operational Amplifier t 2N3055 1N914 CA3085
Contextual Info: HCA10014 Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output HCA10014 op amp combines the advantage of both CMOS and bipolar transistors. Gate protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very high input

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

Contextual Info: Fairchild Im aging Sensors CCD326A 256/512-B it Analog Shift Register Charge Coupled Device FEATURES • Electrically variable analog delay line for audio and video applications. ■ Excellent bandwidth at video and audio rates due to burled channel technology.

block diagram of ca3130

Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E
Contextual Info: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input

J300 Siliconix

Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
Contextual Info: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: IC1 CA3130 CA3130 peak detector pin diagram of IC ca3130 ca3130 pin diagram of ca3130 ca3130 equivalent ca31305 block diagram of ca3130 CA3130 as a low pulse generator
Contextual Info: CA3130 S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/CMOS Output April 1993 Features Description • MOSFET Input Stage Provides: - Very High ZI = 1.5 TΩ 1.5 x 1012Ω Typ. - Very Low II = 5pA Typ. at 15V Operation = 2pA Typ. at 5V Operation

CA3130 peak detector

Abstract: CA3066 CA3085 CA5130M Harris CA3086 CA3130 CA3130A CA5130 CD4007 CA5130AE
Contextual Info: CA5130, CA5130A S E M I C O N D U C T O R NOT RECOMMENDED FOR NEW DESIGNS November 1996 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output Features Description • MOSFET Input Stage - Very High Zl . . . . . . . . . . . . 1.5TΩ 1.5 x 1012Ω (Typ)

IC1 CA3130 CURRENT TO VOLTAGE CONVERTER

Abstract: tektronix 2230 CA5130T CA5130M CA3130 CA3130A CA5130 CA5130A CA5130AE CA5130AM
Contextual Info: CA5130 S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage - Very High Zl . . . . . . . . . . . . . 1.5TΩ 1.5 x 1012Ω Typ. - Very Low ll . . . . . . . . . . . . 5pA Typ. at 15V Operation

Amplifier Modules motorola

Abstract: MOTOROLA catv hybrid transistor book MHW914 MHW7342 MHW8222 GAAS FET CROSS REFERENCE MHW9187
Contextual Info: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 1 10/2003 Freescale Semiconductor, Inc. CATV Distribution Amplifier Module Device Data Table of Contents Freescale Semiconductor, Inc. Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii

CA3130

Abstract: CA3130 peak detector IC1 CA3130 CURRENT TO VOLTAGE CONVERTER about the IC ca3130 CA3130 data sheet ca3130 equivalent IC1 CA3130 ca3130 equivalents CA3130 as a low pulse generator 2N3055 inverter schematic diagram
Contextual Info: CA3130, CA3130A Data Sheet August 1, 2005 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are