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    TRANSISTOR BU2525AF Search Results

    TRANSISTOR BU2525AF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR BU2525AF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BU2525AF

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2525AF OT199 BU2525AF PDF

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2525AF 100-P /PD35C 1E-06 1E-04 1E-02 PDF

    transistor bu2525af

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2525AF transistor bu2525af PDF

    BU2525AF

    Abstract: PPD-25 PD25 ScansUX30
    Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2525AF 0G77t OT199; D077LS1 PPD-25 PD25 ScansUX30 PDF

    BU2525AF

    Abstract: BY228
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2525AF OT199 BU2525AF BY228 PDF

    Contextual Info: N AUER PHILIPS/DISCRETE bTE ] • b b S B ' m □□SaB'lB flOB ■ Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525AF G EN ERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


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    BU2525AF OT199; PDF

    Transistor 5331

    Abstract: ELLS 110 BU2525AF LLS3131
    Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE » WÊ 1 ^ 5 3 ^ 3 1 Philips Semiconductors □GEfl3tì3 fl03 BIAPX Product Specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


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    BU2525AF bb53T31 G0203tifl OT199; Transistor 5331 ELLS 110 BU2525AF LLS3131 PDF

    BU2523AX

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


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    bu2523af

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


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    BU2525AF

    Abstract: BU2725AX
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


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    bu2727d

    Abstract: BU2725DF BU2527 BU2727 BU2525AF Philips Capacitor
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


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    BU2725DX

    Abstract: BU2525AF BU2527AFX transistor bu2725dx
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


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    BU2725DX OT399 BU2725DX BU2525AF BU2527AFX transistor bu2725dx PDF

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2525AX OT399 PDF

    BU2527DX

    Abstract: BU2527AF BU2525DF bu2527af data
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved


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    bu2525ax

    Abstract: BU2525AF BY228
    Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2727AX

    Abstract: BU2525AF
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.


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    Philips BU2527AF

    Abstract: BU2527DF BU2527AF TRANSISTOR BU2525DF IBM REV 2.8 BU2525AF BU2525DF
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved


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    equivalent BU2725DX

    Abstract: BU2725DX transistor bu2725dx BU2525AF bu2727d
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


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    bu2525af

    Abstract: BU2525AX BY228 k 30 transistor
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    BU2523AF

    Abstract: BU2523 BU2523DF BU2525AF
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.


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    BU2727

    Abstract: BU2727AF BU2525AF
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.


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    BU2527

    Abstract: bu2527afx BU2525AF BU2725AF TRansistor 1300 free
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.


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    BU2527AX

    Abstract: BU2527 BU2527AF equivalent bu2527ax BU2525AF BU2527A BY228 bu2527af data
    Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


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    BU2527AX

    Abstract: BU2527AF BU2527AX equivalent equivalent bu2527ax
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for


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