TRANSISTOR BS250 Search Results

transistor

Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
Contextual Info: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)

BS250

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

BS250

Abstract: Philips RDS business BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

BS250

Abstract: diode ITT 172 ITT Intermetall bs250 ITT DIODE
Contextual Info: BS250 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown On special request, this transistor is also manufactured

BS250

Abstract: transistor wz transistor BS250 to92 transistor pinout
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION BS250 QUICK REFERENCE DATA P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Low RpSon D irect interface to C MOS

BS250

Abstract: max 083
Contextual Info: BS250 A _ P-CHANNEL VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO -92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • Very low RoSon Direct interface to C-MOS

Contextual Info: BS250 JV P-CHANNEL VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • • • • V ery low Ro So n D irect interface to C-MOS

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and

BS250P

Contextual Info: BS250 VISHAY P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features_ • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data • • • •

VMOS Transistor

Abstract: BS250
Contextual Info: BS250 Enhancement Mode P-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown m ax.Q 5# Plastic case ~ JEDEC TO-92 TO-18 compatible

2n7000 complement

Abstract: bs250 complement 2n7000+complement TP0610LVT 2N7000 transistor BS250
Contextual Info: •J E T * incorporated VPDS1 DIE P-Channel Enhancement-Mode MOS Transistor VPDS1CHP* BS250 TP0610LVT VP0610L/T ‘ Meets or exceeds specification for all part numbers listed below Source Pad 0.0041 0 . 104 0.0049 For additional design information please consult the

BS250

Contextual Info: BS250 Vishay Semiconductors formerly General Semiconductor DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time

bs250

Abstract: P-CHANNEL D-MOS transistor p-channel transistor 5k
Contextual Info: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • max. ∅ 0.022 (0.55) High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input

bs250

Contextual Info: BS250 DMOS Transistor P-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway

BS250

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown h-EH h H TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 Mechanical Data_

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data • • • • TO-92 B C Case: TO-92, Plastic

Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data · · · · TO-92 B C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

BS250

Abstract: mm6v 343gd
Contextual Info: BS250 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A Mechanical Data · · · · TO-92 B C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

BS250

Abstract: av236 nj10
Contextual Info: c p = G e n e r a l xJ S e m i c o n d u c t o r _ BS250 DMOS Transistor P-Channel) Features • High input impedance • High-speed switching • No minority carrier storage time • CMOS logic compatible input • No thermal runaway • No secondary breakdown

BS250

Abstract: equivalent of BS250 BS250 datasheet
Contextual Info: BS250 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ ♦ ♦ ♦ ♦ High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown

bs250

Contextual Info: BS250 DMOS Transistors P-Channel TO-92 _FEATURES High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown 098 ( 2 . 5 ) _ MECHANICAL DATA_ Case: TO-92 Plastic Package

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –

HITAG2 protocol

Abstract: HITAG PROTOCOL HITAG2 MLX90109 PROTOCOL HITAG command MLX90109 HITAG 2 PROTOCOL BAT43 BS250 HITAG 2 command
Contextual Info: Application Note 100% modulation On-Off Keying 1 Scope This application note explains how to use the MLX90109 transceiver to obtain 100% modulation of the magnetic field (On-Off keying modulation). The MLX90109 datasheet will help to understand the basic operating principles and specifications before reading this document.