TRANSISTOR BR 471 A Search Results

TRANSISTOR D 471

Abstract: transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn
Contextual Info: 2SC D • ßSBSbOS OQQMMR'l 7 « S I E NPN Silicon Planar Transistors G , ~ T ~ 3 l BF 469 BF 471 SIEMENS AKT IE NG ES E L LS C H A F BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic

transistor K 1413

Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110
Contextual Info: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S

transistor BR 471 A

Abstract: Planar RF Transistor BF 472 BF471
Contextual Info: BF 472 Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon P N P Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video ß-c/ass p o w e r stages in TV-receivers Besondere Merkmale: Features: • Hohe Sperrspannung

transistor BR 471 A

Abstract: BF471
Contextual Info: 4m> BF 472 'W Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video B-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Hohe Sperrspannung

transistor BR 471 A

Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

45mO

Abstract: 2SK2985
Contextual Info: TOSHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O S ÏÏ 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= 4.5mO (Typ.)

2SK2985

Contextual Info: TOSHIBA 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O S ÏÏ 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 4.5 mH (Typ.) High Forward Transfer Admittance : |Yfs| = 70S (Typ.)

Contextual Info: TO SHIBA 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SH 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : Rd S (ON) = 4.5 m il (Typ.)

TRANSISTOR D 471

Contextual Info: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M O SII 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= 4.5mfl (Typ.)

Contextual Info: T O S H IB A 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SH 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 Low Drain-Source ON Resistance

Contextual Info: S0 T89 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX704 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SWITCHING PARTMARKING DETAIL - 704 ABSOLUTE MAXIMUM RATINGS VALUE UNIT -120

DIN125A

Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
Contextual Info: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:

UC130

Abstract: transistor BR 471 A din 125a BF 471 bf471
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class p o w e r stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung •

2sk2312

Abstract: transistor BR 471 A
Contextual Info: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance

k2312

Abstract: k2312 transistor 2SK2312 toshiba motor k231
Contextual Info: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance

K2312

Abstract: 2sk2312 k1101
Contextual Info: TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ± 0.3 4 V Gate Drive

BLX65

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the

K2312

Abstract: 2sk2312
Contextual Info: T O S H IB A 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS r 4V Gate Drive

BLS3135-50

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1998 Apr 06 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A

Contextual Info: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;

Contextual Info: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 70 S (typ.)

2SK2376

Abstract: VNQ marking MOS RG 701 TRANSISTOR MARKING kd
Contextual Info: TOSHIBA 2SK2376 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2376 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS 10.3MAX.

transistor 2SA

Abstract: 2106a
Contextual Info: Ordering n u m b e r:EN4 7 1 9 J I SA\YO 2SA1864 No.4719 PNP Epitaxial Planar Silicon Transistor i Muting Circuits, Driver Applications F eatu res •On-chip bias resistors R l = 4.7kQ, R2 = 4.7kQ . ■Very sm all-sized package making 2SA1864-applied sets small and slim.

BSH112

Contextual Info: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.