TRANSISTOR BQ 17 Search Results

BQ HSX

Abstract: BQ lSX PT500 RTD PT1000 CONVERSION TABLE SY 356 PT500 Resistance Table PT500 thermocouple PT1000 table PT1000 table CONVERSION Pt100-250-500-1000
Contextual Info: Digital Panel Meters Modular signal conditioner Type USC-DIN • • • • • • • Multi-input modular signal’s conditioner 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales 200µA to 5A

PT1000 CONVERSION TABLE

Abstract: PT1000 table 20-200-500V PT100 IEC B PT100 tempered PT1000 RTD SY 356 thermo couple PT100 stick udm40 thermoresistance
Contextual Info: Digital Panel Meters Modular Indicator and Controller Type UDM40 • • • • • • • • The alarm status can be coupled to the different colour of the display • Linearization of V and A inputs up to 16 points • • • • • • Multi-input modular instrument 4 dgt LED

PT250 RTD

Abstract: BQ HSX PT250 table Pt100-250-500-1000 UDM35DS PT1000 table npn 1000V 100a PT100 IEC B pt100/PT100 PT1000 CONVERSION TABLE
Contextual Info: Digital Panel Meters Modular Indicator and Controller Type UDM35 • • • • • • • • • • • Multi-input modular instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales

Magnetic Field Sensor FLC 100

Abstract: transistor ITT
Contextual Info: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection

UL26

Contextual Info: mm jmmRF Prnmtc-* m Microsemi »ANWW fiÿ Wiwiiiiiÿx 140 C o m m e rc e D riv e M o n tg o m e ry v ille , PA 18936-10 13 Tel: {2 1 5> 6 3 1-9 840 S D 1 2 2 4 -2 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS CLASS C TRANSÌSTOR FRE-QUFtNCY 175MH z

dm0063

Abstract: D0061b D0061A Doo61A 3N60
Contextual Info: Series DO, DMO 1-3.0 Am p • 60 V dc* DC O utput MINI-SIP Compact for High Density FCB Mount SFST-NO DC output relays in epoxy­ coated packages utilize the popular .10" grid lead spacing. They are avail­ able with either bipolar transistor out­ put DO , or the DM0063 w ith MOSFET

DIN 41612 H15 male

Abstract: Melcher M 1000 Melcher LK 2660-7R 1001-7R 1301-7R Melcher converter s 1000 MELCHER THE POWER PARTNERS melcher Melcher LK 2000 marking v6 zener diode
Contextual Info: DC-DC Converters >100 W 8 DC-DC Converters >100 W 8.1 Rugged Environment Output [W] 20 40 60 100 120 150 8.2 3 Input [V DC] 10 30 70 140 220 380 Product Family Case Page K K02 8-2 Product Family Case Page Q Q01 8 - 29 Product Family Case Page Industrial Environment

bq 3060

Abstract: Melcher BQ 2320
Contextual Info: Industrial Environment DC-DC Converters >100 W 100 W DC-DC Converters Q-Family Q-Family Input to output isolation Single output: Series BQ.GQ 1000 Double output: Series BQ.GQ 2000 • Extremely high efficiency of up to 91 % • Excellent protection, 2 kVrms input to output

transistor B 560

Abstract: transistor bq 90 Transistor marking BQ 2SA1774 2SC4617
Contextual Info: 2SC4617 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z SOT-523 Low Cob. Cob=3.5pF Complementary pair with 2SA1774 Dim Min Max A 1.50 1.70 B 0.75 0.85 C 0.70 0.90

b310 diode

Abstract: DU9 308 1DI75F-120
Contextual Info: 1DI75F-120 75a /< 7 H : Outline D raw ings .- ;u POWER TRANSISTOR MODULE •W Ji • Features ' fiÜSÎŒ H ig h V o lta g e 17 ' J — KF*3i 'A S O ^ '/ a ^ In clu d in g Free W h e e lin g D iode Ex cellent S a fe O p eratin g A rea Insulated Type ■ Æ jiÉ • A p p lic a t io n s

hef4051

Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
Contextual Info: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●

2SB766A

Abstract: 2SD874A F MARKING
Contextual Info: 2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89  Large collector power dissipation PC  Complementary to 2SD874A M A C D Collector E B 

2SB766A

Abstract: sot-89 BQ 2SD874A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB766A SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874A 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2660-7R

Abstract: bq 3060
Contextual Info: Cassette Style DC-DC Converters 60.132 Watt DC-DC Converters Q Series Q Series Input voltage ranges up to 168 V DC 1 or 2 isolated outputs 3.3.48 V DC 3 kV AC I/O electric strengh test voltage • Extremely high efficiency of up to 88% • Flexible output power

Contextual Info: H ^-*11 ft? H A R R IS Ë S E M I C O N D U C T O R t Ê ARINC 429 Bus Interface Line Driver Circuit March 1997 Features Description • TTL and CMOS Com patible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differ­ ential line driver designed to meet the specifications of ARINC

Germanium Power Diodes

Abstract: BD3 tunnel diode Germanium Power Devices
Contextual Info: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage

k1206

Abstract: Ericsson B
Contextual Info: ERICSSON 0 PTF 10112 60 Watts, 1.8-2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,

BUK445-500B

Contextual Info: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor z7m

Abstract: "Z7M" e z7m
Contextual Info: v T exas In s t r u m e n t s CD4063B Types Data sheet acquired from Harris Sem iconductor S C H S 050 CMOS 4-Bit Magnitude Comparator High Voltage Types 20-Volt Rating Features: • C D 4 0 6 3 B is a 4-bit m agnitude com ­ parator designed fo r use in com puter and

kbr 4.0M

Abstract: TM 511720 TI 51173 transistor LC6523
Contextual Info: Ordering number: EN%5117 CMOS LSI No. * 5117 LC6529N, 6529F, 6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit single­

Contextual Info: Order this docum ent by M C44824/D MOTOROLA TV AND VCR PLL TUNING CIRCUITS WITH 1.3 GHz PRESCALER AND |2C BUS PLL Tim ing C ircuits w ith |2c Bus The MC44824/25 are tuning circuits for TV and VCR tuner applications. They contain on one chip all the functions required for PLL control of a VCO.

Transistor NEC 12d

Contextual Info: I *•^ ^ v ^ M , NEC Electronics Inc. D escription The |xPD78233, jlPD78234, and (1.PD78P238 are highperformance, 8 -bit, single-chip microcomputers. They contain extended addressing capabilities for up to 1 M byte of external memory. The devices also integrate sophisti­

Contextual Info: SEC NEC Electronics Inc. ljJ»D7821x Advanced, 8-B it Real-Tim e Control Microcom puters With A /D Converter JRN 2 8 ImT Description □ Four timer-controlled PWM channels The |aPD78213, |xPD78214, and H.PD78P214 are high-per­ formance, 8-bit, single-chip microcomputers. They con­

Contextual Info: NEC Electronics Inc. rJAN 2 8 P D 7 8 2 3 X Advanced, 8 -Bit R eal<Time Control M icrocom puters W ith A/D and D/A Converters 199? January 1990 Description The H.PD78233, |jlPD78234, and p.PD78P238 are highperformance, 8 -bit, single-chip microcomputers. They