THERMORESISTANCE Search Results
THERMORESISTANCE Datasheets Context Search
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thermoresistance
Abstract: PT1000 MDI40C Ni100 PT100 IEC B PT1000 RTD PT1000 RTD probe PT1000 thermocouple signal converter pt1000 MDI40
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MDI40CFX thermoresistance PT1000 MDI40C Ni100 PT100 IEC B PT1000 RTD PT1000 RTD probe PT1000 thermocouple signal converter pt1000 MDI40 | |
PT1000 RTD
Abstract: PT1000 PT1000 table CFX 21 PT100 IEC B PT1000 thermocouple PT1000 RTD reference table PT1000 RTD probe LDI35 PQ-32/RTD-50-L-02
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LDI35 PT1000 RTD PT1000 PT1000 table CFX 21 PT100 IEC B PT1000 thermocouple PT1000 RTD reference table PT1000 RTD probe PQ-32/RTD-50-L-02 | |
PT1000 RTD
Abstract: PT1000 RTD reference table LDI35 KG 400
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LDI35 PT1000 RTD PT1000 RTD reference table KG 400 | |
thermoresistanceContextual Info: Panel Meters and Controllers Controller for Temperature Measurements Type MDI 40 CF • 3 3/4-dgt multi-range µP-based controller • Temperature measurements in °C or °F by means of thermoresistance or thermocouple probes and resistance measurement • All software functions selectable by key-pad |
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MDI40CFX thermoresistance | |
PDI 40
Abstract: ptc rtd controller RTY81 Ni100 ptc PDI40 KTY 81 6 ni100 KTY81 DSI panel thermoresistance
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10VDC. PDI 40 ptc rtd controller RTY81 Ni100 ptc PDI40 KTY 81 6 ni100 KTY81 DSI panel thermoresistance | |
rtd pt100 probe
Abstract: kty81 Ni100 ptc ptc rtd controller temperature PID
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PDI70 rtd pt100 probe kty81 Ni100 ptc ptc rtd controller temperature PID | |
PT250 RTD
Abstract: BQ HSX PT250 table Pt100-250-500-1000 UDM35DS PT1000 table npn 1000V 100a PT100 IEC B pt100/PT100 PT1000 CONVERSION TABLE
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UDM35 200mV Pt100-250-500-1000, Ni100, 20mA/10VDC RS485 RS232 pan48mm UDM35DS PT250 RTD BQ HSX PT250 table Pt100-250-500-1000 PT1000 table npn 1000V 100a PT100 IEC B pt100/PT100 PT1000 CONVERSION TABLE | |
LED37FC-SMD5Contextual Info: LED37FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 3.75 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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LED37FC-SMD5 LED37FC-SMD5 670x770 150-200mA | |
LED34-TEC-PRContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm Model LED34-TEC-PR 24 µW •Light Emitting Diodes LED34-TEC-PR are designed for emitting at a spectral range around 3400 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates |
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LED34-TEC-PR LED34-TEC-PR LED34 LED34 LED34-PR | |
LED20-TEC-PRContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates |
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LED20-TEC-PR LED20-TEC-PR LED20 LED20 LED20-PR | |
LED20FC-SMD5Contextual Info: LED20FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 2.02 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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LED20FC-SMD5 LED20FC-SMD5 670x770 150-200mA | |
Contextual Info: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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LED36-SMD3 LED36-SMD3 300x300 150-200mA | |
LED31-TECContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3 .1 µ m Model LED31-TEC 14 µW •Light Emitting Diodes LED31-TEC are designed for emitting at a spectral range around 3100 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates |
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LED31-TEC LED31-TEC LED31 LED31 LED31-PR | |
Contextual Info: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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LED23-SMD3 LED23-SMD3 300x300 150-200mA | |
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gefran 230
Abstract: gefran pt100
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E243386 2004/108/CE 2006/95/CE gefran 230 gefran pt100 | |
gefran 230Contextual Info: GFX-4 4 LOOP MODULAR POWER CONTROLLER Main features 4 independent loop control unit. Compact, ready to use, equipped also with fieldbus interface. Unit consisting of: • Controller • 30, 60, 80kW solid state relay • Current transformers one or four |
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E2433866 2004/108/CE 2006/95/CE gefran 230 | |
Contextual Info: Digital Panel Meters Modular Indicator and Controller Type USC-DIN • • • • • • • • Multi-input modular signal’s conditioner 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales |
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200mV Pt100-250-500-1000, Ni100, 001Hz 50kHz) 20mA/10VDC RS485 RS232 RS232 | |
microcontroller based overvoltage and under voltage relays
Abstract: HITFET BTS117 BSP75N BSP78 BSP76 BTS133 bts3134 DS08 DIODE BSP77 BTS117
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Contextual Info: 27/05/2014 www.crouzet.com CT48A CT48A Part number 89420087 Input by J-K thermo-couple or by thermo-resistance Pt 100 2-wire 2 regulation modes : ON/OFF or proportional derivative selected by wiring Relay output Part numbers 89 420 087 Type Description Temperatures |
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CT48A CT48A | |
LED29-TEC-PRContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.9 µm Model LED29-TEC-PR 8 µW •Light Emitting Diodes LED29-TEC-PR are designed for emitting at a spectral range around 2900 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates |
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LED29-TEC-PR LED29-TEC-PR LED29 LED29 LED29-PR | |
LED19-TECContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC 1.0 mW •Light Emitting Diodes LED19-TEC are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates |
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LED19-TEC LED19-TEC LED19 LED19 LED19-PR | |
LED23-TEC-PRContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.35 µm Model LED23-TEC-PR 0.8 mW •Light Emitting Diodes LED23-TEC-PR are designed for emitting at a spectral range around 2350 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates |
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LED23-TEC-PR LED23-TEC-PR LED23 LED23 LED23-PR | |
LED36-SMD5RContextual Info: LED36-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions |
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LED36-SMD5R LED36-SMD5R 300x300 150-200mA | |
LED19-SMD5Contextual Info: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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LED19-SMD5 LED19-SMD5 300x300 150-200mA |