TRANSISTOR BP 109 Search Results
TRANSISTOR BP 109 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR BP 109 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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opr12
Abstract: opr 12 Mosfet J49 9mfp 7291P TA8425H 8212F 7774P TA7363AP 24 dip "transistor array"
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tc9142psqp20p-300tc9192p/ftc9203p/f+15 | |
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Contextual Info: INTEGRATED CIRCUITS LP2985A-XX Very low noise, low dropout, 150 mA linear regulator, CMOS process technology Product data Supersedes data of 2003 May 12 Philips Semiconductors 2003 Jul 31 Philips Semiconductors Product data Very low noise, very low dropout, 150 mA linear |
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lp2985a-xx | |
LP2985A-28DContextual Info: INTEGRATED CIRCUITS LP2985A-XX Very low noise, low dropout, 150 mA linear regulator, CMOS process technology Product data Supersedes data of 2003 Jul 31 Philips Semiconductors 2003 Aug 18 Philips Semiconductors Product data Very low noise, very low dropout, 150 mA linear |
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lp2985a-xxlp2985a-28d | |
2SA636
Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 2SC1098 251C 2SA636A 2SC1098A tup pnp transistor
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OCR Scan |
2sa6362sa636a2sc10982sc1098a+6 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A PINNING FEATURES • High current max. 600 mA |
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m3d087pzt2222aot223pzt2907a+2 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT4401 NPN switching transistor Product data sheet 1999 May 10 NXP Semiconductors Product data sheet NPN switching transistor PZT4401 PINNING FEATURES • High current max. 600 mA PIN • Low voltage. |
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m3d087pzt4401ot223pzt4403+3 | |
zt4401
Abstract: BP 109 transistor PZT4401 PZT4403 SC-73 SOT223 nxp
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m3d087pzt4401ot223pzt4403+6 | |
PZT2222A
Abstract: PZT2907A SC-73 BP 109 transistor
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m3d087pzt2222aot223pzt2907a+4 | |
BP317
Abstract: PZT4401 PZT4403
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m3d087pzt4401ot223pzt4403+4 | |
BP317
Abstract: PZT2222A PZT2907A
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m3d087pzt2222aot223pzt2907a+4 | |
2n6673
Abstract: 2n6671 RCA8767
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OCR Scan |
2n66712n66722n6673t0-204aa+1 | |
uPB1509B
Abstract: poly silicon resistor mmic j
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upb1509bpb15o9bpoly silicon resistormmic j | |
BF1101WRContextual Info: Philips Semiconductors N - c h a n n e l d u a l- g a te Product specification M O S -F E T s B F1101; B F1101R ; B F1101W R PINNING FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio PIN • Low noise gain controlled amplifier |
OCR Scan |
f1101f1101rf1101wmsb035+5 | |
w2 mark 5 pin mosfet smd
Abstract: Philips SC07 Small-signal Transistors transistor bf 175
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w2 mark 5 pin mosfet smdphilips sc07 small-signal transistorstransistor bf 175 | |
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Contextual Info: Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter • Switching and linear amplification. |
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pzt2222aot223pzt2907a | |
BSH101Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19 Philips Semiconductors Product specification |
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m3d088bsh101sc13bsca56+1 | |
BSH101Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1997 June 19 File under Discrete Semiconductors, SC13b 1997 Nov 28 Philips Semiconductors Product specification |
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m3d088bsh101sc13bsca56+1 | |
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Contextual Info: BF904; BF904R N-channel dual gate MOS-FETs Rev. 06 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact |
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bf904bf904r | |
transistor marking M06 GHZ
Abstract: BF904 BF904R
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bf904bf904rsnw-eq-608snw-fq-302a+2 | |
BF904R
Abstract: BF904 marking code mc
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bf904bf904rmarking code mc | |
BF1101WRContextual Info: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING |
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bf1101bf1101rbf1101wrmsb035+1 | |
BF1201WRContextual Info: DISCRETE SEMICONDUCTORS DAT BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2000 Mar 29 NXP Semiconductors Product specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs FEATURES |
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bf1201bf1201rbf1201wrmsb035+1 | |
BF1201
Abstract: BF1201R BF1201WR 7555 ID c2328 dual-gate
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bf1201bf1201rbf1201wrmsb035+4 | |
BF1101WR
Abstract: "MARKING CODE NC" MGS303 BF1101 BF1101R MGS302 dual-gate
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bf1101bf1101rbf1101wrmsb035+5 | |