BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
|
Original
|
2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
|
PDF
|
varistor 472 SUS
Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross
|
Original
|
an-7514varistor 472 susrpf22n10fairchild ul file mos transistor+6uhc mosan75c150ias150rfp22n10uis test
|
PDF
|
TRANSISTOR BC 157
Abstract: transistor bc 564 NMOS-2 transistor bc 541 transistors BC 543 HARRIS PACKAGE LOGIC FCT TRANSISTOR REPLACEMENT GUIDE bc 574 transistor AN6525 NMOS-2 transistor
Contextual Info: Cross Reference Guides TABLE 1A. CROSS OF AN IDT TYPE TO A RECOMMENDED HARRIS REPLACEMENT TYPE IDT TYPE TABLE 1B. CROSS OF IDT/FCT GENERAL PURPOSE LOGIC TYPES TO HARRIS ACT GENERAL PURPOSE LOGIC TYPE EQUIVALENTS HARRIS REPLACEMENT P E SO M XXX XXX XXXA XXXAT
|
Original
|
cd74actxxxe/mtransistor bc 157transistor bc 564nmos-2+7transistor bc 541transistors bc 543harris package logic fcttransistor replacement guidebc 574 transistoran6525nmos-2 transistor
|
PDF
|
2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
|
Original
|
24ghzbf517b132-h8248-g5-x-76002sc3052ef+92n2222a sot23transistor smd marking code s2a1n4148 smd ll-34transistor smd code package sot232n2222 sot23transistor s1a 64 smd1n4148 sod323semiconductor cross referencetoshiba smd marking code transistor
|
PDF
|
SPICE model for UC3844
Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
Contextual Info: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
|
Original
|
br1522/daug-2000r14525spice model for uc3844+9uc3843 spice modeltl494 spice modeleb407 basic halogen convertermtp2n10180v - 240v igbt dimmeruc3845 pspice modelmosfet cross referencespice model moc3061uc3843 flyback supply opto-coupler
|
PDF
|
2sc1943 circuit diagram
Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,
|
Original
|
bu323ztip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1943 circuit diagramtip42c diagrampin diagram mje13003transistor tip41c schematic diagrambd139 transistor circuit diagramtip31 npn transistor diagram2n3055 4d2n3055 to-218 packagebu108tip122 tip127 audio amp schematic
|
PDF
|
c 3421 transistor
Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability
|
Original
|
bu208atip73btip74tip74a+15tip74btip75tip75atip75btip75c2n6488c 3421 transistorbu108transistor equivalent of bu406equivalent transistor 2n3055bu126 motorola2sd165bc 574 transistord 1163 a2n4906 motorola
|
PDF
|
automotive ignition tip162
Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —
|
Original
|
bu323aptip73btip74tip74a+15tip74btip75tip75atip75btip75cautomotive ignition tip162bc337 cross-referencebu108bd390 cross referencereplacement transistor bc337bux48a2sd1815 "cross referencetip102 darlington transistormotorola mj15022mj1000
|
PDF
|
bd139 equivalent transistor
Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106 Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS
|
Original
|
mje16106tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bd139 equivalent transistortransistor 2sa1046motorola transistor cross referencetransistor equivalent book 2sc2073transistor 40251transistor replacement guidepin configuration transistor bd140transistor bd610transistor equivalent book 2sc2238st t8 3580
|
PDF
|
2SC124
Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS
|
Original
|
2n51912n51922n51942n5195+15tip73btip74tip74atip74btip75tip75a2sc1242n5195 motorolabu108bd238 equivalent2sa1046tip3055 equivalentbu806 complementbu326bu100
|
PDF
|
IR3001
Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
|
Original
|
mjf15030mjf15031mje15030mje15031+16e69369tip73btip74tip74atip74btip75ir3001pin configuration npn transistor bd679724 motorola npn transistor with heat padsimilar ic ba 3812pmd16k40transistor bc 5452sd331 npn transistorbu108bd130 to126pin configuration npn transistor tip41c
|
PDF
|
2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
|
Original
|
mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
|
PDF
|
TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
|
Original
|
tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
|
PDF
|
MJ802 EQUIVALENT
Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110* Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •
|
Original
|
mj16110mjw16110tip73btip74+16tip74atip74btip75tip75atip75btip75cmj802 equivalent2n3055 equivalent transistor numbermj4502 equivalentbd131 equivalentbd139 equivalentst t8 3580mj15025* equivalentmj3055 equivalentbdx37 equivalentmje340 equivalent
|
PDF
|
|
|
Motorola case 77
Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc
|
Original
|
mje200mje210tip73btip74+13tip74atip74btip75tip75atip75btip75cmotorola case 772n3055bu1082sc15bdw93c applicationsbu326bu100
|
PDF
|
TIP35C transistor replacement
Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V
|
Original
|
tip73btip74tip74atip74b+15tip75tip75atip75btip75c2n64882n6490tip35c transistor replacementtip35c replacement2n3055 equivalentbu108d45h11 equivalent replacementbdx542n3772 equivalentbu326bu100
|
PDF
|
D72F5T2 NPN
Abstract: silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad MJE15029 audio output TRANSISTOR PNP 2SB686
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC = 3.0 Adc
|
Original
|
mje15028mje15029mje15030mje15031+11220abtip73bd72f5t2 npnsilicon npn 2sd716 transistorbd4202bd139 3vbu1082n5978 npnpin configuration npn transistor tip41c724 motorola npn transistor with heat padaudio output transistor pnp 2sb686
|
PDF
|
pin configuration NPN transistor tip41c
Abstract: TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP41A TIP41B* TIP41C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc
|
Original
|
tip41atip42atip41btip42b+12tip41ctip42cpin configuration npn transistor tip41ctip41c equivalenttransistor tip41c pin configurationpin configuration npn transistor tip42ctip42c equivalentbu108all similar transistor 2sa7152sa699tip41a semiconductorstip42a equivalent
|
PDF
|
2SA1046
Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS
|
Original
|
2n63872n6388220abtip73b+8tip74tip74a2sa1046bu108transistor bc 239 cbu326bu100mje15033 replacement
|
PDF
|
2SA1046
Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275
|
Original
|
2n62742n62752n62772n6377+11power32tip73btip742sa10462n6275 equivalentbu108tr tip2955motorola 2n6277bu806 complementbu326bu100
|
PDF
|
2sa1046
Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0
|
Original
|
bdx33bbdx33c33c/34b220ab+13bdx34bbdx34ctip73b2sa10462sd436bd133bd8782sc10132sc1943bd4192sc1014ir4252sc2168
|
PDF
|
MJ-12003
Abstract: TIP32C 329 BU108 BD679 2N6285 equivalent bd139 equivalent 2SA49 PRF 374 MOTOROLA ST BDX53C BD602
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP31A TIP31B* TIP31C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.2 Vdc (Max) @ IC = 3.0 Adc
|
Original
|
tip31atip32atip31btip32b+12tip31ctip32cmj-12003tip32c 329bu108bd6792n6285 equivalentbd139 equivalent2sa49prf 374 motorolast bdx53cbd602
|
PDF
|
BD139
Abstract: BU108 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY
|
Original
|
2n60552n6056tip73btip74+7tip74atip74btip75bd139bu108bu326bu100
|
PDF
|
automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
|
Original
|
bu323a204aatip73btip74+15tip74atip74btip75tip75atip75bautomotive ignition tip162bu323a equivalent2sa1046bc337 rbebu108tip102 darlington transistorbc337 cross-reference2sc190replacement transistor bc337bu326
|
PDF
|
