TRANSISTOR BHD 15 Search Results

TRANSISTOR BC 206 PNP

Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Contextual Info: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V

sf 128 transistor

Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.

tc 144e

Abstract: 144EK
Contextual Info: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4

702 Z TRANSISTOR smd

Abstract: 702 Z smd TRANSISTOR 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA 2sc5872 FR MARKING SMD TRANSISTOR 702 H transistor smd MARKING SMD IC CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

transistor smd marking KA

Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

transistor smd marking KA

Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 702 transistor smd marking KA MARKING CODE SMD IC FR MARKING SMD TRANSISTOR marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE A1 2SC5700 2SC5849
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

MARKING CODE YA TRANSISTOR

Abstract: 2SC5049 2SC5049YA-TL-E SC-59A RENESAS marking code package
Contextual Info: 2SC5049 Silicon NPN Epitaxial REJ03G0740-0300 Previous ADE-208-1129A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

2SC5049

Abstract: 2SC5049YA-TL-E SC-59A RENESAS mpak marking code
Contextual Info: 2SC5049 Silicon NPN Epitaxial REJ03G0740-0300 Previous ADE-208-1129A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

Hitachi transistor

Abstract: 16-Bit Microcomputers "16-Bit Microcomputers" "Display Controller" hitachi ad "32-Bit Microprocessors" infrared diodes Hitachi laser diodes
Contextual Info: HITACHI ASIA SEMICONDUCTOR & INTEGRATED CIRCUITDIVISION SICD SALES LOCATIONS HITACHI ASIA SEMICONDUCTOR & INTEGRATED CIRCUIT DIVISION PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors Smart Card ICs Display Controller/Driver

M62292FP

Abstract: PRSP0008DA-A PRSP0008DE-C
Contextual Info: M62292FP 3.3 V, 1.8 V Fixed 2-Output Voltage DC/DC Converter REJ03D0852-0300 Rev.3.00 Jun 15, 2007 Description M62292FP is 3.3 V and 1.8 V fixed stable 2-output step-down DC/DC converter. It is possible to simplify peripheral circuit and to design compact and low cost sets because this device includes

240mil

Abstract: M62220FP M62220L PRSP0008DA-A PRSP0008DE-C 5P5T
Contextual Info: M62220L/FP 3.3 V Fixed Output Voltage DC/DC Converter REJ03D0846-0300 Rev.3.00 Jun 15, 2007 General Description The M62220 is a general purpose DC/DC converter which provides a 3.3 V fixed output voltage. It is possible to simplify the peripheral circuit and to design compact and low cost sets because this IC, housed in a

Contextual Info: M5291P/FP DC/DC Converter REJ03D0841-0300 Rev.3.00 Jun 15, 2007 Description M5291 is a semiconductor integrated circuit which is designed for switching regulator control. The device consists of a comparator, controlled pulse width oscillator with peak current protection circuit , temperature compensated reference,

M62290

Abstract: REJ03D0850-0300 M62290FP M62290L PRSP0008DA-A PRSP0008DE-C
Contextual Info: M62290L/FP 5.0 V Fixed Output Voltage DC/DC Converter REJ03D0850-0300 Rev.3.00 Jun 15, 2007 General Description The M62290L/FP is a general purpose DC/DC converter which provides 5.0 V fixed output. It is possible to simplify peripheral circuits and to design compact and low cost sets because this IC includes a lot of

2SC3052F

Contextual Info: M62216FP/GP Low Voltage Operation STEP-UP DC/DC Converter REJ03D0845-0300 Rev.3.00 Jun 15, 2007 Description The M62216FP is designed as low voltage operation STEP-UP DC/DC converter. This IC can operate very low input voltage over 0.9 V and low power dissipation. (circuit current is less than 850 µA)

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

STR 6307

Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Contextual Info: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.

MG1200V1us51

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

Contextual Info: TAN-321 Audio IC Application Circuit TAN–321 Application Circuit Example of 3-band FM, MW and LW 5-V Tuner TA2149N + TC9257F 1. Outline TC9257F PLL VT F/E TA2149N VCO FM AM IF DET MPX L R MW LW The above is an application circuit example of a 3-band (FM, MW and LW) 5-V tuner.

TDA 16846 P

Abstract: tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605
Contextual Info: Version 1.0 , March 2000 Application Note AN-SMPS-CoolMOS-1 SMPS with CoolMOS and TDA 16846x Author: Peter Preller Published by Infineon Technologies AG http://www.infineon.com Power Conversion Titel: Infineon Logo 4c.eps Erstellt von: Adobe Illustrator(R) 8.0

SM8404

Abstract: PC8041 Oscillator 3.6864MHz K2206 RM601 IR3M06 SM8401 S5504 IC 74256 SM8410
Contextual Info: SHARP CORP b Q E J> m â l û G ? 1^ 000*1517 34 4 « S R P J RELIMINARY SM8410/IR3M06 • Cordless Telephone System Low-Power CMOS 8-Bit Microcomputer/Regulator IC M Description The SM8410 is a CMOS 8-bit single-chip microcomputer which integrates 8-bit CPU core, ROM,

Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering