TRANSISTOR BFT 10 Search Results
TRANSISTOR BFT 10 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR BFT 10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Transistor BFT 10
Abstract: transistor 3Ft bux c 651 emetteur 3ft73
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74sonttransistor bft 10transistor 3ftbux c 651+2 | |
BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
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bft65q62702-f451fl235bdstransistor bft65+3 | |
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Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to |
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023sbosq62702-f390 | |
Transistor BFT 99
Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
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q0g4713q62702-f513051i0transistor bft 99+4 | |
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Contextual Info: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s |
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q62702-f1681ot-3230122e04900mhz+1 | |
2f5 transistor
Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
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a23sbos2f5 transistortransistor bft 99tic 122 transistor+3 | |
30227
Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
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vps05161ot-23900mhzoct-25-1999+7 | |
Transistor BFT 98
Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
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vso05561ot-323900mhzoct-25-1999+10 | |
Transistor BFT 44
Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
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23sbosq004701q62702-f390transistor bft 44+8 | |
Transistor BFT 93
Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
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ot-23q62702-f1063dec-12-1996transistor bft 93+4 | |
Transistor BFT 92W
Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
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ot-323q62702-f1681900mhzdec-11-1996+4 | |
30227
Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
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ot-23q62702-f1062900mhzdec-13-1996+3 | |
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Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration |
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q62702-f1062ot-23bft92h35bd5+1 | |
Marking W1s
Abstract: bft92 w1s sot23
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ot-23q62702-f1062bft92900mhz+2 | |
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bft97
Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
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bft97q62702-f514fl235bgsd0b74ss+9 | |
Transistor BFT 96
Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
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q0q532q0484e1ft-11569-gs+9 | |
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Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution! |
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q62702-f1488ot-323053sbos900mhz+2 | |
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Contextual Info: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking |
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q62702-f45600b743fi623sbd5bft66+1 | |
E 94733
Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
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q62702-f1488ot-323900mhze 94733+3 | |
BFT-12
Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390
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bft12t0-50q62702-f390bft-12+3 | |
BCR108W
Abstract: BFR92W E6327 VSO05561
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bfr92wvso05561ot323bcr108w+1 | |
E 94733Contextual Info: BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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bfr92pvps05161150cale 94733 | |
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Contextual Info: BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
Original |
bfr92pvps05161150cal | |
BFR92W
Abstract: VSO05561 marking p1S
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bfr92wvso05561ot323900mhz+2 | |