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    TRANSISTOR BFT 10 Search Results

    TRANSISTOR BFT 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR BFT 10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor BFT 10

    Abstract: transistor 3Ft bux c 651 emetteur 3ft73
    Contextual Info: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature


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    74sonttransistor bft 10transistor 3ftbux c 651+2emetteur3ft73 PDF

    BFT65

    Abstract: transistor bft65 f451 61 SIEMENS 25813
    Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration


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    bft65q62702-f451fl235bdstransistor bft65+3f45161 siemens25813 PDF

    Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to


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    023sbosq62702-f390 PDF

    Transistor BFT 99

    Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
    Contextual Info: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF


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    q0g4713q62702-f513051i0transistor bft 99+4bft75siemens cibbft 66transistor bft 44 PDF

    Contextual Info: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


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    q62702-f1681ot-3230122e04900mhz+1d1525d5 PDF

    2f5 transistor

    Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
    Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF


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    a23sbos2f5 transistortransistor bft 99tic 122 transistor+32sc 2090transistor bft 44u/25/20/tn26/15/850/bft75 PDF

    30227

    Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
    Contextual Info: BFT 92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s


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    vps05161ot-23900mhzoct-25-1999+730227ic f 922transistor bft 98infineon marking w1s sot23transistor bft 10bft92w1s sot23 PDF

    Transistor BFT 98

    Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w
    Contextual Info: BFT 92W PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s


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    vso05561ot-323900mhzoct-25-1999+10transistor bft 98transistor bfr 900mhz75167bft 65infineon marking w1srf npn power transistor c 10-12 ghz30227transistor bft 10ghz pnp transistorbft92w PDF

    Transistor BFT 44

    Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
    Contextual Info: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the


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    23sbosq004701q62702-f390transistor bft 44+8transistor tt 2078transistor 2sc 458transistor b c 458transistor npn d 2078b-01bft12gp 823q0047 PDF

    Transistor BFT 93

    Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
    Contextual Info: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package


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    ot-23q62702-f1063dec-12-1996transistor bft 93+4transistor bft 10marking 9340maicbft93 PDF

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Contextual Info: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    ot-323q62702-f1681900mhzdec-11-1996+4transistor bft 92w30227transistor bft 10transistor bft 65 PDF

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Contextual Info: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original
    ot-23q62702-f1062900mhzdec-13-1996+330227transistor bft 10w1s sot23 PDF

    Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


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    q62702-f1062ot-23bft92h35bd5+1900mhz PDF

    Marking W1s

    Abstract: bft92 w1s sot23
    Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Type Marking Ordering Code


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    ot-23q62702-f1062bft92900mhz+2marking w1sw1s sot23 PDF

    bft97

    Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
    Contextual Info: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


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    bft97q62702-f514fl235bgsd0b74ss+9fl23sb0500b745btransistor bft 97bft 97marking t5420mavcetransistor marking zstransistor bft 10marking code t54 PDF

    Transistor BFT 96

    Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
    Contextual Info: TELEFUNKEN ELECTRONIC Ô1C P • fi^SQD^b Q00532Q T r-*/~ BFT 96 iniDJllFWIKEM electronic Creative Technologies Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain


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    q0q532q0484e1ft-11569-gs+9000s154hal66if-11transistor bft 96bft96transistor 3884transistor bc 176telefunken u 237transistor fet 3884 PDF

    Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    q62702-f1488ot-323053sbos900mhz+215nla23sb05 PDF

    Contextual Info: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


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    q62702-f45600b743fi623sbd5bft66+1fle35bos PDF

    E 94733

    Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
    Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    q62702-f1488ot-323900mhze 94733+3p1s sot-89bfr pnp transistorspice 2g6 PDF

    BFT-12

    Abstract: Transistor BFT 44 transistor BFT 41 transistor BFT 95 BFT12 Q62702-F390
    Contextual Info: BFT12 NPN Silicon planar RF transistor BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41 867 sim. T 0 -5 0 for universal application in amplifiers up into the GHz range, e.g. for broadband antenna amplifiers with a high output power and linearity and for


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    bft12t0-50q62702-f390bft-12+3transistor bft 44transistor bft 41transistor bft 95 PDF

    BCR108W

    Abstract: BFR92W E6327 VSO05561
    Contextual Info: BFR92W NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    bfr92wvso05561ot323bcr108w+1e6327 PDF

    E 94733

    Contextual Info: BFR92P NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    bfr92pvps05161150cale 94733 PDF

    Contextual Info: BFR92P NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    bfr92pvps05161150cal PDF

    BFR92W

    Abstract: VSO05561 marking p1S
    Contextual Info: BFR92W NPN Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA  Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    bfr92wvso05561ot323900mhz+2aug-03-2001marking p1s PDF