TRANSISTOR BFS 18 Search Results

BFS17A

Abstract: BFS17AR marking E2
Contextual Info: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

VSO05561

Contextual Info: BFS 17W NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS 17W MCs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

BFS62

Abstract: Planar RF Transistor B4025 AC309
Contextual Info: BFS 62 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den VHF-Bereich Applications: General up to the VHF range Besondere Merkmale: Features: • Kleine R ückw irkungskapazität • Small feedback capacitance

k 319

Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
Contextual Info: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar

BFS480

Abstract: Q62702-F1531 GG24
Contextual Info: BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7GHz F = 1.5dB at 900MHz • Two (galvanic) internal isolated Transistors in one package

Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated

482 transistor

Abstract: Q62702-F1573 GMA marking
Contextual Info: BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Top View Morking on SOI-db.} pockooe (for example W1s corresponds to pin I ol device Direction of Unreeling

Q62702-F1574

Abstract: GMA marking
Contextual Info: BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFS480

Abstract: VPS05604
Contextual Info: BFS 480 NPN Silicon RF Transistor 4
For low noise, low-power amplifiersin mobile 5 6 communication systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
f T = 7 GHz F = 1.5 dB at 900 MHz 2 3 1
Two (galvanic) internal isolated VPS05604

Q62702-F1572

Abstract: GMA marking
Contextual Info: BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: VPS05604
Contextual Info: BFS 482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

VPS05604

Contextual Info: BFS 483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4

VPS05604

Contextual Info: BFS 481 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 0.5 mA to 12 mA
f T = 8 GHz F = 1.4 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

TRANSISTOR K 314

Abstract: antenne
Contextual Info: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­

TRANSISTOR 1443

Abstract: marking f2 sot363 f2 sot-363 marking VU SOT363
Contextual Info: SIEMENS BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation ijy io? vu» 6 54 Matting en SOT-363 pockog* {fo r «am pi« W ti c o rm p o ró t to pin 1 of tHric« 12 3 Olrtcttow of Unrnllng

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

bcw 918

Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
Contextual Info: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

ir 319

Abstract: BFS55A ir319
Contextual Info: IMP N -S iliz iu m -B re itb a n d tra n s isto r B F S 55A B F S 5 5 A ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 8 7 6 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n w e n dungen bis in den GH z-Bereich geeignet. z.B. in Antennenverstärkern sow ie für Radar-ZFVerstärker und Satellitentechnik.

BFS480

Contextual Info: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package

amplifier siemens sot-363

Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
Contextual Info: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code