TRANSISTOR BFP540 Search Results

TRANSISTOR BFP540 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR BFP540 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SOT-173 Abstract: SOT173 SOT173 RF transistor NPN planar RF transistor BFP540 wideband transistor sot173 Contextual Info: Philips Objective specification 3 !~~^3 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5bE D • BFP540 711DflSb D0453flfci HT2 ■ PHIN PINNING PIN • High power gain • Low noise figure	OCR Scan	BFP540 QQ453Ã OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 SOT173 RF transistor NPN planar RF transistor wideband transistor sot173	PDF
Contextual Info: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency	OCR Scan	bbS3T31 D0314T7 BFP540 OT173X) BFP540 OT173 OT173X RE120	PDF
Transistor BFP540 Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 Transistor BFP540	PDF
marking AUs Contextual Info: BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line • Exellent ESD performance	Original	BFP540ESD VPS05605 OT343 marking AUs	PDF
INFINEON ATS Abstract: BFP540 BGA420 Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 INFINEON ATS BFP540 BGA420	PDF
Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343	PDF
Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and	Original	540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3	PDF
bfp540 Abstract: INFINEON ATS BGA420 Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 bfp540 INFINEON ATS BGA420	PDF
BFP540 Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540	PDF
BFP540 Abstract: INFINEON ATS BGA420 Transistor BFP540 Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540	PDF
BFP540ESD Abstract: BGA420 Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line	Original	BFP540ESD OT343 10may BFP540ESD BGA420	PDF
marking aus Abstract: BFP420F BFP540FESD amplifier marking code a Contextual Info: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)	Original	BFP540FESD marking aus BFP420F BFP540FESD amplifier marking code a	PDF
Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm Jul-22-2004 -j100	PDF
Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343	PDF

BFP540ESD Abstract: BGA420 Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line	Original	BFP540ESD OT343 BFP540ESD BGA420	PDF
marking AUs Abstract: BFP420F BFP540FESD amplifier marking code a Contextual Info: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)	Original	BFP540FESD marking AUs BFP420F BFP540FESD amplifier marking code a	PDF
RF NPN POWER TRANSISTOR C 10-12 GHZ Abstract: BFP540ESD BGA420 Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line	Original	BFP540ESD OT343 RF NPN POWER TRANSISTOR C 10-12 GHZ BFP540ESD BGA420	PDF
Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line	Original	BFP540ESD OT343	PDF
Contextual Info: BFP540 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 2 4 1 • Pb-free RoHS compliant and halogen-free package with visible leads	Original	BFP540 AEC-Q101 OT343	PDF
BFP540 Abstract: 030232 Contextual Info: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Aug-29-2003 BFP540 030232	PDF
Contextual Info: BFP540FESD Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small	Original	BFP540FESD AEC-Q101	PDF
Contextual Info: BFP540 NPN Silicon Germanium RF Transistor 3 4 For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB Gold metallization for high reliability 1 SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Jul-14-2003	PDF
Contextual Info: Philips Objective specification "T-13 /"* NPN 9 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L FEATURES SbE D • BFP540 7 1 1 D 6 5 b D0453flfci 4T2 II PHIN PINNING • High power gain	OCR Scan	OT173X) 8FP540 OT173 BFP540 D0453flfci	PDF
BFP540 Abstract: INFINEON application note Contextual Info: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note	PDF

TRANSISTOR BFP540 Search Results

TRANSISTOR BFP540 Result Highlights (5)

TRANSISTOR BFP540 Datasheets Context Search

SOT-173

Transistor BFP540

marking AUs

INFINEON ATS

bfp540

BFP540

BFP540

BFP540ESD

marking aus

BFP540ESD

marking AUs

RF NPN POWER TRANSISTOR C 10-12 GHZ

BFP540

BFP540