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    TRANSISTOR BF 600 Search Results

    TRANSISTOR BF 600 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR BF 600 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CA3046 bjt

    Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
    Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


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    ca3046ca3086ca3127mm9701+9100mvca3046 bjtca3046 spicepspice ca3086ca3086 spiceharris ca3046harris ca3086ca3046 npn0138e PDF

    H124

    Abstract: DSUB111 M33 TRANSISTOR RB1010 DIOD003 H124-H125 ws106 T08I3 BF113 H125
    Contextual Info: AN1598/D H124, 125, 350−352 Translator I/O SPICE Modelling Kit Prepared by: Debbie Beckwith Andrea Diermeier ECL Applications Engineering http://onsemi.com APPLICATION NOTE This application note provides the SPICE information necessary to accurately model system interconnect situations for


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    an1598/dh124dsub111m33 transistor+7rb1010diod003h124-h125ws106t08i3bf113h125 PDF

    Contextual Info: S G S-T HOnSON D7C D | S T S 3 7 0 0 1 M Ì SD 7 C O S /H IO S INTEGRATED CIRCUIT 7929225 S G S 41C 08964 SEMICONDUC TOR ""CORP o r - ¥ J - 2 j HEX BUFFER • • • • • • • • 1 T T L -LO A D OUTPUT DRIVE C APAB ILITY 2 OUTPUT-DISABLE CONTROLS


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    4503b PDF

    Marking ANs

    Abstract: Transistor C 5198 b 514 transistor BFP450
    Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability


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    q62702-f1590ot-343marking anstransistor c 5198+2b 514 transistorbfp450 PDF

    BFT92

    Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
    Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures


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    bft92wot323bft92711002b+6marking code w1ghz pnp transistormarking g sot323 transistorsot323 marking 87sot323 wmmarking l2 sot23 6 PDF

    4842B

    Abstract: 4042
    Contextual Info: COS/MOS INTEGRATED CIRCUIT R 4 ° 4iL5 h c c /h c f 4842B Q U A D C LO CK ED " D " LATCH • • • • • • • • • • C L O C K ^ O L A R IT Y C O NTRO L Q A N D Q OUTPUTS COMMON CLO CK LOW POWER T T L C O M PATIBLE S T A N D A R D IZ E D S Y M M E T R IC A L O U TPU T C H A R A C T E R IS T IC S


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    4842b4042 PDF

    BF 194 transistor

    Abstract: VPS05178 BFP194
    Contextual Info: BFP 194 PNP Silicon RF Transistor 3  For low distortion broadband amplifier in antenna and telecommunications systems up 4 to 1.5 GHz at collector currents from 20 mA to 80 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    vps05178ot-143900mhzoct-12-1999+2bf 194 transistorbfp194 PDF

    9632 transistor

    Abstract: high gain low capacitance NPN transistor transistor 9632 BFG67W transistor marking CODE S4b transistor equivalent 1047
    Contextual Info: Product specification Philips Semiconductors B F G 67W B FG 67W /X ; B F G 67W /X R N PN 8 G H z w id eb an d tra n s isto r M ARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability.


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    bfg67wbfg67w/xbfg67w/xrot343+6ot343r9632 transistorhigh gain low capacitance npn transistortransistor 9632transistor marking code s4btransistor equivalent 1047 PDF

    BFQ591

    Abstract: transistor 09013 NPN 09013 NPN DIN45004B philips MATV amplifiers
    Contextual Info: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    bfq591e20071002transistor 09013 npn09013 npn+2din45004bphilips matv amplifiers PDF

    TRANSISTOR BC 157 pin connection

    Abstract: UA776 TRANSISTOR BC 157 transistor BC 247 BF247 sgs thomson Fets TRANSISTOR BC 313 1N4148 77603 UA776C
    Contextual Info: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)


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    ua776ua776cua776iua776m+10ua776cnua776cdtransistor bc 157 pin connectiontransistor bc 157transistor bc 247bf247sgs thomson fetstransistor bc 3131n414877603 PDF

    Contextual Info: W Cm HEW LETT mLcM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 400 MHz Technical Data UTO/UTC 442 Series Features Description Pin Configuration • Frequency Range: 10 to 400 MHz The 442 Series is a high-efficiency, medium-gain bipolar RF amplifier


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    44475fih PDF

    Contextual Info: C O S/M O S INTEGRATED CIRCUIT / ,0 û i R 4 h cc /h c f 4094B -fD 8-STAGE SH IFT-AN D -S TO R E BUS REGISTER • • • • • • • • • 3 -S T A T E P A R A L L E L OUTPUTS FOR CO NNECTIO N TO COMMON BUS SEPARATE S E R IA L OUTPUTS SYNCHRO NOUS TO BOTH PO S ITIVE A N D N E G A T IV E CLOCK


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    4094b2079m PDF

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


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    ne681ne68100ne68118-t1ne68119-t1+10ne68130-t1ne68133-t1bne68135ne68139-t1ne68139r-t1transistor npn d 2078common emitter bjttransistor bf 494ne68133-t1b-amje 3009 PDF

    6267 ic pin details

    Contextual Info: BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


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    bfg92a/xbfg92axbfg92series6267 ic pin details PDF

    transistor equivalent book FOR D 1047

    Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor


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    m3d088pbr951sca60125104/1200/05/pp16+7771-pbr951-t/rtransistor equivalent book for d 1047mda770pbr951,215mouser 1998transistor b 1566mcc 90-16 PDF

    Contextual Info: COS/MOS INTEGRATED CIRCUIT J -o ? & B HCcmcF 40S8B DUAL MONOSTABLE M U LTIV IB R A TO R • • • • • • • • • • • RET RIGGER A B L E /R E S E T T A B L E C A P A B IL IT Y T R IG G E R A N D RESET PR O P AG ATIO N D E L A Y S IN D E P E N D E N T OF Rx , Cx


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    PDF

    Contextual Info: COS/MOS INTEGRATED CIRCUITS 4 5 5 b 4 5 6 ß HCC/HCF 40546 HCC/HCF 4055B HCC/HCF 4056 B LIQ U ID -C R Y STA L DISPLAY DRIVERS 4054B - 4-S E G M E N T DISP LA Y D R IV E R - STROBED LATCH FUNCTIO N 4055B - BCD TO 7-S E G M E N T D E C O D E R /D R IV E R , W ITH "D IS P L A Y -F R E Q U E N C Y " O UTPUT


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    4055b4056b4054b PDF

    TRANSISTOR ASG 4D

    Abstract: lp1 6d diode HMCS4019r 4 bit right left shift register ics H8/325 TQFP1414-100 HCD66710A00 HD44780 HD66710 HD66710A00FS
    Contextual Info: HD66710 Dot Matrix Liquid Crystal Display Controller/Driver Description The HD66710 dot-matrix liquid crystal display controller and driver LSI displays alphanumerics, numbers, and symbols. It can be configured to drive a dot-matrix liquid crystal display under the control of a 4- or 8bit microprocessor. Since all the functions such as display RAM, character generator, and liquid crystal


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    hd66710single16-character16-charactertransistor asg 4d+8lp1 6d diodehmcs4019r4 bit right left shift register icsh8/325tqfp1414-100hcd66710a00hd44780hd66710a00fs PDF

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


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    ne681ne68100ne68118-t1ne68119-t1+12ne68130-t1ne68133-t1bne68135kf 203 transistor08e-12ic 2030 pin connectionsbjt 522datasheet of bjt 547ne and micro-x2sc42272sc5007bf 194 npn transistor PDF

    N06CL

    Abstract: 3N06C diode ESM 182 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE TB334 742E-12
    Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs July 1999 File Number 3948.5 Features • 0.30A, 60V [ /Title • rDS ON = 6.0Ω (RLD0 These are intelligent monolithic power circuits which


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    rld03n06clerld03n06clesmrlp03n06cle150oc+83n06crld03n06cldiode esm 182mosfet 60v 210a03n06ctb334742e-12 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Contextual Info: Advance Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations L8574C Resistive Subscriber Line Interface Circuit SLIC , Ring Relay, and Protector (SRP) for Long Loop and TR-57 Applications Features • Low-power scan mode for low on-hook power dis­


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    l8574ctr-57gdes147lucl8574cp-d+144-pin PDF

    2N5086

    Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


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    2n5086mmbt50862n5087mmbt5087+4ot-23cbvk741b019f63tnrpn2222n PDF

    Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIA8159FN b i p o l a r l i n e a r i n t e g r a t e d c ir c u it 1.5V STEREO HEADPHONE AMPLIFIER The KIA8159FN is developed for play-back stereo headphone equipments 1.5V use . It is built in dual auto-reverse pre amplifiers, dual OCL power amplifiers,


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    kia8159fn48//vrms PDF