TRANSISTOR BD236 Search Results

transistor SD335

Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

transistor sc 236

Abstract: transistor sc 238
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor sc 238

Abstract: T-33-H transistor motorola 236 transistor sc 236 B023S BD234 BD236 BD238
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 F> "Tb MOTOROLA SC b 3ti7SS4 0000575 96D 8 0 5 7 5 XSTRS/_R.F D BD234 BD236 BD238 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR PNP SILICON . . . d esigned for use in 5 to 1 0 W att audio amplifiers and drivers

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage

BD234

Contextual Info: MO TQR CLA SC 1SE D | 1 317554 00fiM7ai 1 | XSTRS/R F 7^-33-/? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2.0 AMPERES POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . d e sig n e d for u se in 5.0 to 10 W a tt a u d io a m p lifie rs a n d drivers

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic BD234 BD236 BD238 Collector Emitter Voltage BD234 BD236 BD238 Collector Emitter Voltage BD234

BD234

Abstract: bd238 bd238 equivalent BD236
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit - 45 V : BD236 - 60 V : BD238

BD238

Abstract: BD236 BD237 BD235
Contextual Info: BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BD234 Rating V cbO BD236 BD238 C ollecto r E m itter Voltage

BD236

Abstract: BD237 BD238 BD238D transistor bd238
Contextual Info: ON Semiconductor NPN BD237 Plastic Medium Power Silicon NPN Transistor PNP BD238 *ON Semiconductor Preferred Device . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 2.0 AMPERES

bd237

Abstract: BD235 0016114E BD236 BD238 JESD97
Contextual Info: BD235 BD237 NPN power transistors Features • . NPN transistors Applications ■ Audio, power linear and switching application Description 3 The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

Circuit details of BD237 equivalent

Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD234

Abstract: bd238 bd238 equivalent BD236
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR PNP TO-126 FEATURES Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units -45 -60 -100 -45 -60 -80 V IC BD234

transistor BD 325

Contextual Info: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BD238

Abstract: BD234 BD236
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Symbol BD234 C ollecto r E m itter Voltage Rating

BD234

Abstract: bd238 equivalent BD236 BD238
Contextual Info: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

bd234

Contextual Info: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

c251c

Abstract: BD238 BD234
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Unit -45 -60 V V -100 V -45 -60 V VcER

Contextual Info: BD237 NPN , BD238 (PNP) Preferred Devices Plastic Medium Power Silicon NPN Transistor Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain − • • http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc