TRANSISTOR BD140 N Search Results

BD136

Abstract: BD140 TRANSISTOR NPN BD140 BD140 npn BD138 transistor BD140 BD140 circuits transistor BD138 transistor bd136 of transistor BD140
Contextual Info: BD136 BD138/BD140 PNP SILICON TRANSISTORS Type Marking BD136 BD136-10 BD136 BD136-10 BD136-16 BD136-16 BD138 BD140 BD138 BD140 BD140-10 BD140-10 BD140-16 BD140-16 3 • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon

of transistor BD140

Abstract: BD140 N BD140 pnp transistor BD140 circuits transistor BD140 N transistor BD139 N BD140 npn bd136 N BD136 BD135
Contextual Info: BD136 BD138/BD140 PNP SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi

bd140 pin out

Abstract: BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140
Contextual Info: ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS

BD138

Contextual Info: BD136 BD138/BD140 PNP SILICON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers

BD140-10

Abstract: BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137
Contextual Info: ON Semiconductort BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS

Contextual Info: r z 7 S G S -m O M S O N Ä T # [MO gfô l[L[iera®*S BD136 BD138/BD140 PNP SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers

Contextual Info: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD138G

Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

transistor BD140

Abstract: power transistor bd136 to126 case transistor bd136
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  1 DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD139

Abstract: BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD136 BD137 BD140 bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135

BD135

Contextual Info: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU

Bd139

Abstract: BD136 bd139 Complement
Contextual Info: BD135/137/139 BD135/137/139 Medium Power Linear and Switching Applications • Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/BD138/BD140 TO-126 TRANSISTOR PNP FEATURES •High Current(-1.5A) 1. EMITTER 2. COLLECTOR ·Low Voltage(-80V) 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

bd136g

Abstract: bd140 bd series of pnp transistor BD136 BD140 pnp transistor bd 142 transistor
Contextual Info: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137

BD139 time

Abstract: bd140 Complement BD136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD135, BD137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage : BD136

BD135

Abstract: BD139 BD-135 power transistor bd135 BD136 BD137 BD138 BD140 bd139 Complement
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/137/139 TRANSISTOR NPN TO – 126 FEATURES z High Current z Complement To BD136, BD138 And BD140 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BD136

Abstract: BD138 transistor BD140 transistor bd136
Contextual Info: BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-126 High Current 1Emitter 2Collector 3Base CLASSIFICATION OF hFE Product-Rank BD136-6 BD136-10

Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80

BD 266 S

Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing

BD140 pnp transistor

Abstract: BD139 BD140H BD140
Contextual Info: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD139. D C E F G H DIM A B C D E F G H J K L M N O P

Contextual Info: SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD139. D C E F G H DIM A B C D E F G H J K L M N O P

BD139H

Contextual Info: SEMICONDUCTOR BD139 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD140. D C E F G H DIM A B C D E F G H J K L M N O P J