TRANSISTOR BD 110 Search Results

transistor BD 800

Abstract: transistor BD 110
Contextual Info: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

transistor bd 292

Abstract: BD240C 20mH 1A power transistor bd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers

transistor D 2394

Abstract: f173 fp302
Contextual Info: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.

microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS

BD 266 S

Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

TMOS power FET

Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
Contextual Info: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

transistor bd 370

Abstract: transistor BD 110
Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon • Collector -Emitter Sustaining Voltage — VcEOisusI = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8Adc

Contextual Info: Rev.5.0_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

8 pin ic 9435

Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
Contextual Info: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS

XOA transistor

Contextual Info: PRELIMINARY TECHNICAL DATA = Dual PCI Hot-PlugTM Controller Preliminary Technical Data PAUXONA ADM1014 3.3V Cmos Input 30 7 +3.3VAux AUXGA 31 AUXINA S Q FAULT LATCH 3.3V Cmos Output FAUXA G RESET 5 D OVERCURRENT AND UNDERVOLTAGE COMPARATORS FOR +3.3VAUX SET

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

HS 2303

Abstract: marking BD sot 23-5 30v135 1d sot
Contextual Info: ☆GO-Compatible Preliminary ◆Low Power Consumption ◆Dropout Voltage : 40mV@30mA 135mV@100mA ◆Output Voltage Range : 0.8V ~ 5.0V ◆Output Current : 300mA <Up to 380mA TYP. > ◆Low ESR Capacitor Compatible ◆Fast Ripple Rejection, Low Output Noise

Keithley s900

Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
Contextual Info: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.

Contextual Info: LTC4260 Positive High Voltage Hot Swap Controller with I2C Compatible Monitoring DESCRIPTION FEATURES n n n n n n n n n n Allows Safe Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C /SMBus Interface Wide Operating Voltage Range: 8.5V to 80V

v3055

Abstract: transistor bd 370 BD 130 Y transistor A/Detector/"Detector+IC"/"CD"/MMFT3055V
Contextual Info: MMFT3055V Power MOSFET 1 Amp, 60 Volts N−Channel SOT−223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

Contextual Info: LT1108 Micropower DC/DC Converter Adjustable and Fixed 5V, 12V DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Operates at Supply Voltages from 2V to 30V Consumes Only 110µA Supply Current Works in Step-Up or Step-Down Mode Only Four External Components Required

transistor D13003

Abstract: D13003 transistor SMD 352 A5
Contextual Info: ACT364 Rev 4, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator FEATURES few external components. • Patented Primary Side Regulation The ACT364 ensures safe operation with complete protection against all fault conditions. Built-in protection circuitry is provided for output shortcircuit, output over-voltage, line under-voltage, and

transistor smd marking BA

Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten