TRANSISTOR BD 110 Search Results

transistor BD 800

Abstract: transistor BD 110
Contextual Info: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

transistor bd 292

Abstract: BD240C 20mH 1A power transistor bd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers

transistor D 2394

Abstract: f173 fp302
Contextual Info: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.

microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS

BD 266 S

Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

TMOS power FET

Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
Contextual Info: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

transistor bd 370

Abstract: transistor BD 110
Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9435 PNP Silicon • Collector -Emitter Sustaining Voltage — VcEOisusI = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8Adc

Contextual Info: Rev.5.0_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

S-8358B36MC-NQVT2G

Abstract: pin diagram of 8355 nichicon capacitor bd S-8355Q45MC-OXET2G S-8355M50MC s-8358b40mc-nqzt2 s-8358b40mc-nqzt2g S-8355M65MC-MDYT2G S-8355Q30MC-OWPT2G S-8357B30MA-NIPT2G
Contextual Info: Rev.6.6_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

Contextual Info: Rev.5.1_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

pin diagram of 8355

Abstract: S-8357H50MC-NNJT2G S-8358B33MC-NQST2G S-8358B36MC-NQVT2G 3.40 pf variable capacitor 6 pin current control forward dc to dc converter S-8357B50MA-NJJT2G 8357 S-8355M50MC S-8357BxxMA
Contextual Info: Rev.6.1_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

IB0810M100

Abstract: l-band 60 watt transistor x band radar U 855 D nc50
Contextual Info: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SO T-223 for Surface Mount TM O S V N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

LED lighting

Abstract: transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
Contextual Info: Innovative PowerTM ACT364 DESIGN GUIDE Jun 2014 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs June 2014 Copyright 2014 Active-Semi International, Inc. - - www.active-semi.com www.active-semi.com

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing

Contextual Info: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design

8 pin ic 9435

Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
Contextual Info: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS

um3166

Contextual Info: UNITED MI CR OELE C T R ON I C S TE D Ë J ‘ïBESfllE ODQDSbb 1 9 3 25812 UNITED MICR O E L E C T R O N I C S 92D 00566 LJlYiO D U M 3166AG r -1 o ; Simple Melody Generator Features • 64-note ROM memory ■ Direct piezo drive ■ 1.3V to 3.3V power supply and low power consumption

BD 104 NPN

Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN
Contextual Info: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

XOA transistor

Contextual Info: PRELIMINARY TECHNICAL DATA = Dual PCI Hot-PlugTM Controller Preliminary Technical Data PAUXONA ADM1014 3.3V Cmos Input 30 7 +3.3VAux AUXGA 31 AUXINA S Q FAULT LATCH 3.3V Cmos Output FAUXA G RESET 5 D OVERCURRENT AND UNDERVOLTAGE COMPARATORS FOR +3.3VAUX SET

transistor bd 370

Contextual Info: MOTOROLA O rder this docum ent by M M FT3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055V TM OS V N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This