TRANSISTOR BC 660 Search Results

C2310

Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
Contextual Info: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,

transistor Bc 580

Abstract: TRANSISTOR BC 450 pnp transistor BC 660
Contextual Info: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data
For AF input stage and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

transistor bc 487

Abstract: transistor bc 488 sot-323 transistor marking code 15
Contextual Info: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

bc 494 pnp

Abstract: 847PN
Contextual Info: BC 847PN SIEMENS NPN/PNP Silicon AF Transistor Array * For A F input stages and driver applivations * High current gain * Low collector-emitter saturation voltage >Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

1ps sot

Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
Contextual Info: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

846PN

Abstract: VQE 11E
Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

transistor Bc 580

Abstract: marking 1cs 847S transistor bc 100
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

bc 104 npn transistor

Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
Contextual Info: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

transistor bc icbo nA npn

Abstract: 847S Q62702-C2372 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

transistor BC 450

Abstract: marking 1DS sot363 1ds sot
Contextual Info: BC 846S NPN Silicon AF Transistor Array Preliminary data • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code

transistor bc556

Abstract: transistor bc 558 application transistor B 560 TRANSISTOR C 557 B bc557 fairchild pnp bc559 transistor transistor 557 b BC 557 PNP TRANSISTOR information of BC558 BC556
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC556, VCEO= -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Capacitance

transistor c 557

Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
Contextual Info: BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings

Contextual Info: SIEMENS BC 846S NPN Silicon A F Transistor Array • For A F input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package H FI R

Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

VPS05604

Abstract: Bc 140 transistor
Contextual Info: BC 846S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

transistor BC 660

Abstract: 846U H12E
Contextual Info: BC 846U NPN Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

847S

Abstract: VPS05604 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

Q62702-C2537

Abstract: VPS05604 846P
Contextual Info: BC 846PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 Tape loading orientation