TRANSISTOR BC 115 Search Results

C2310

Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
Contextual Info: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

transistor bc 487

Abstract: transistor bc 488 sot-323 transistor marking code 15
Contextual Info: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

bc 494 pnp

Abstract: 847PN
Contextual Info: BC 847PN SIEMENS NPN/PNP Silicon AF Transistor Array * For A F input stages and driver applivations * High current gain * Low collector-emitter saturation voltage >Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

2SC1815

Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
Contextual Info: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL

3cs transistor

Abstract: marking 3cs 6c2 transistor PS056
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

C2373

Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

5b1 transistor

Abstract: transistor 5B1 H12E
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

1ps sot

Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
Contextual Info: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

846PN

Abstract: VQE 11E
Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

bc 104 npn transistor

Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
Contextual Info: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

transistors BC 543

Abstract: TRANSISTOR BC 748 transistor BC 543
Contextual Info: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration

transistor bc icbo nA npn

Abstract: 847S Q62702-C2372 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

transistor BC 450

Abstract: marking 1DS sot363 1ds sot
Contextual Info: BC 846S NPN Silicon AF Transistor Array Preliminary data • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code

bc 104 npn transistor

Abstract: TRANSISTOR BC 6 pnp
Contextual Info: BC 846PN NPN/PNP Silicon AF Transistor Array Preliminary data • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

Contextual Info: SIEMENS BC 856S PNP Silicon AF Transistor Array • For A F input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package C1 r R TR

817-U

Abstract: 6Bs transistor
Contextual Info: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

Contextual Info: SIEMENS BC 846S NPN Silicon A F Transistor Array • For A F input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package H FI R

Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type