TRANSISTOR BAND COLOR Search Results

SANYO 16 AMP 120V NPN TRANSISTOR

Abstract: C3781 transistor 2sC3781 2SC3781 005045 m475 2SA1475 SC46 T0220AB
Contextual Info: 2527A Ordering num ber : EN 2SA1475/2SC3781 PNP/NPN Epitaxial Planar Silicon Transistor SAMTO Ultrahigh-Definition CRT Display Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features High f -\p ' fm

2SA1474

Abstract: A147 SC46 T0220AB
Contextual Info: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz

2SC3782

Abstract: transistor 2sa1 2528A 2SA1476 SC46 T0220AB transistor 2sc3782
Contextual Info: Ordering number: EN 2528A 2SA1476/2SC3782 i PNP/NPN Epitaxial Planar Silicon Transistor SAm rol Ultrahigh-Definition CRT Display Video Output Applications Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=400MHz

2SA1960

Abstract: 2SC5225 Hitachi DSA00396
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features

Hitachi 2SA

Abstract: Hitachi DSA002756
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features

MRF1057T1

Abstract: AN1675 RK73H2A MDC5001 MRF1027T1 MRF1047T1 2.5 ghz lna transistor motorola rf spice 0/MRF1057
Contextual Info: Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro INTRODUCTION This Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA

2SA1960

Abstract: 2SC5225 2SA19 Hitachi DSA00125
Contextual Info: 2SA1960 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features • High voltage large current operation.

2SA1960

Abstract: 2SC5225 Hitachi DSA0014
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA1960. Features • High voltage large current operation.

Contextual Info: H ITACH I 2SC5225-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA 1960. Features

transistor 2SA

Contextual Info: H ITACH I 2SA1960-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features

2SA1960

Abstract: 2SC5225 2SC522 2SA19 Hitachi DSA00118
Contextual Info: ADE–208–392 Z 2SA1960 Silicon NPN Epitaxial Transistor 1st. Edition Sep. 1995 Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225.

2SC5225

Abstract: DSA003642
Contextual Info: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.

MS-T520D

Contextual Info: Ref. No. - PT - MS-T520D MOK SAN ELECTRONIC CO., LTD. Q.A CHECKED APPROVED 1. General Description The MS-T520D is high sensitivity NPN silicon photo transistor mounted in a lensed, Black color epoxy looking package. 2. Feature 1 High sensitivity. 2) Wide Band of Collector Current.

marking WB1 sot-23

Abstract: marking WB2 sot-23 transistor WB1
Contextual Info: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source

NI-600

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522-70 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source

LP2951

Abstract: BC847 921 smd transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband

motorola rf spice

Abstract: J2/MRF1057TI AN1675 MDC5001 MRF1027T1 MRF1047T1 MRF1057T1 RK73H2A dbm-166 mixer MRF1057
Contextual Info: Freescale Semiconductor, Inc. Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro Freescale Semiconductor, Inc. INTRODUCTION This Application Note describes the performance of the

Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

marking WB1 sot-23

Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

smd transistor marking j1

Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

dbm-166 mixer

Abstract: AN1675 MRF1057T1 MRF1057 MDC5001 MRF1027T1 MRF1047T1 RK73H2A mrf1027
Contextual Info: MOTOROLA ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 SEMICONDUCTOR APPLICATION NOTE Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by: Raul Pineiro This Application Note describes the performance of the

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

BC847

Abstract: LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source