TRANSISTOR BA 13 Search Results

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ D eT I ^ V S S D 9 097250 T O S H I BA DISCRETE/OPTO ¿ Ja ïh ih n 99D 16722 DDlt,72E S | D T - 31- 13 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2S I 5 72 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (i-MOS) TENTATIVE INDUSTRIAL APPLICATIONS

marking IAY

Abstract: CMBT5400
Contextual Info: HIGH VOLTAGE TRANSISTOR P -N -P transistor M arking CMBT5400 = K? PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m 3.0 0.14 Pin configuration 1 = BA SE 2 = EMITTER 3 = C O LLEC TO R ABSOLUTE MAXIM UM RATIN GS Collector-base voltage open emitter

Contextual Info: BCX54/BCX55/BCX56 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER FEATURES High current Low voltage Medium power general purposes Driver stages of audio amplifiers. 1 2 3 SOT-89 MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

telefunken ed 32 5000

Contextual Info: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le ­ phone. Features • Sm all fe ed ba ck capacitance

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.

93C24

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B

2SC1817

Abstract: TRANSISTOR PJ
Contextual Info: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

Contextual Info: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed

k 219 transistor

Abstract: Scans-048 DSAGER00063
Contextual Info: Vorläufige technische Daten SSE 216 SSE 2» Süisiu »apn-SpifeaxL8-PXaa&r-Ii gereohb«& Miai&tuEplasfcgeM iise für d i g i t a l e Anwendung. 0,9 - 0.05 mo 13-0,2 Masset «c 0,02 g Sganzwerta» gültig für den Betriebstemperafcurbereich. Maximale loilokfcop-Baais-Bpajmung

transistor ck 112

Abstract: MB3604 B3604
Contextual Info: FU JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I MB3604 1 1 December 1987 Edition 1.0 HIGH FR EQUENCY O PE R A TIO N A L A M P L IFIE R T h e Fu jitsu M B3604 is a m onolithic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.

CRITCHLEY 9003

Abstract: siemens CNY17-2 TE 2161 CRITCHLEY 9004 BS6317 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers
Contextual Info: ICs for Communications Analog Line Interface with the ARCOFI -BA PSB 2161 Application Note 06.96 PSB 2161 Revision History: Current Version: 06.96 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)

BA033CC0WFP

Abstract: BA033CC0WT BA33CC0WT BA33DD0WT BA50DD0WT equivalent transistor bc 172 b ROHM 200V 200mA DIODE BACC0Wfp
Contextual Info: Standard LDO Regulators Standard Fixed Output LDO Regulators BA□□DD0 Series, BA□□CC0 Series Standard Fixed Output LDO Regulators with Shutdown Switch BA□□DD0W and,BA□□CC0W Series No.11021ECT01 ●Description Standard Fixed Output LDO Regulators are low-saturation regulators, available for output s up to 2A / 1A. ROHM has a wide

P-Channel IGBT

Contextual Info: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to

c 3337

Abstract: ZTX1048A ZTX 950 TR3E
Contextual Info: *ZETEX ZTX1048A Spice model Last revision 20/01/95 .M OD EL ZTX 1048A NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120 + ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15 + ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010 + CJC=136E-12 CJE=559.1E-12 M JC=0.267 M JE=0.299

IC 555 timer monostable

Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
Contextual Info: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.

toshiba ccd linear dual shift gate

Abstract: ccd linear toshiba TCD107
Contextual Info: T O S H I B A -CLOGIC/MEÎIORY} 90 9 7 2 4 8 T OS H I B A b? DE I ciO‘i7E4fl D 0 I H S 7 3 LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD107C 67 C 0 9 5 7 3 T-41-55 The TCD107C is a high resolution and high sensitivity 1024 element linear image sensor.

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

KD224503HB

Abstract: KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220
Contextual Info: POÙJEREX I NC b4E D • 000LSS3 S^S « P R X m t/BÍEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES

CA2600

Abstract: 601B AN1027 CA2200 overlay transistor metallization
Contextual Info: Order this document by AN1027/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1027 RELIABILITY/PERFORMANCE ASPECTS OF CATV AMPLIFIER DESIGN Prepared by: Michael D. McCombs “Reliability is the probability of a device performing its purpose adequately for the period of time

sch 5127

Abstract: top 2556 en
Contextual Info: fü HARRIS H A S E M I C O N D U C T O R - 2 5 5 7 130MHz, F o u r Q u a d ra n t, C u rre n t O u tp u t A n a lo g M u ltip lie r N ovem ber 1996 F ea tu res Description • L o w Multiplication Error . . . . . . . 1 .5 % • I n p u t B i a s C u r r e n t s .

Contextual Info: ISO-9001 CERTIFIED BY DESC M S Kl [MNI.UY j o n c HIGH CURRENT, SUPER LOW DROPOUT FIXED VOLTAGE REGULATORS 8 1 7 0 Thompson Road Cicero, N.Y. 13039 ccmce o tn ltc j (315 699-9201 M/L-STD-1772 CERTIFIED FEATURES: • • • • • • • • 5010 Extremely Low Dropout Voltage 0 .4 5 V (9 10 Amps