TRANSISTOR B834 Search Results

Transistor B834

Contextual Info: B834 YOUDA TRANSISTOR SI PNP TRANSISTOR—B834 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -60V *Collector current up to -3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

b834

Abstract: Transistor B834
Contextual Info: B834 YOUDA TRANSISTOR Si PNP TRANSISTOR—B834 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -60V *Collector current up to -3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage

B834A

Abstract: B834 D880 D880A
Contextual Info: B834A B834A Silicon PNP Epitaxial Transistor Description: The B834A is designed for audio frequency general amplifier applications and power pumping! Features: ●Excellent hFE Linearity ●Complementary to D880A Chip Appearance Chip Size 1500umx1500um Chip Thickness

D880A

Abstract: D880 B834 B834A
Contextual Info: D880A D880A Silicon NPN Epitaxial Transistor Description: The D880A is designed for audio frequency general amplifier applications and power pumping! Features: ●Excellent hFE Linearity ●Complementary to B834A Chip Appearance Chip Size 1500umx1500um Chip Thickness

transistor d325

Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
Contextual Info: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511

B834 Y

Abstract: B834 Transistor B834 T B834
Contextual Info: KSD880 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • C om plem ent to K S B834 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 60 V Collector-Emitter Voltage VcEO 60 V Emitter-Base Voltage V ebo

Contextual Info: • Philips Semiconductors t>b53T31 0024804 483 HIAPX N AUER PHILIPS/DISCRETE Product specification b?E PNP 5 GHz wideband transistor c BFG31 PINNING FE A T U R E S • High output voltage capability PIN • High gain bandwidth product 1 emitter DESCRIPTION

B834

Abstract: Transistor B834 T B834 2SB834 HB834 2SB834HB834
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR B834 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A126AG-01 芯片厚度：240±20µm 管芯尺寸：1260x1260µm 2 焊位尺寸：B 极 308×308µm 2；E 极 308×385µm 2

2493 transistor

Abstract: BFG35 BFG55 UBB337
Contextual Info: •I Philips Sem iconductors — ^ 53^131 □ 0 iMfi3 b T T 3 H A P X N A PIER PHI LIP S /D IS C R ET E bVE p Product soeciflcation PNP 4 GHz wideband transistor FEATURES ^ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

B908

Contextual Info: TMS570LS31x/21x 16/32-Bit RISC Flash Microcontroller Technical Reference Manual Literature Number: SPNU499B November 2012 – Revised August 2013 Contents . 90

asus motherboard circuit diagram

Abstract: SuperSpeed USB 3.0 to Serial ATA Bridge P1263 intel MOTHERBOARD SERVICE MANUAL
Contextual Info: Intel Atom Processor E3800 Product Family Datasheet October 2013 Revision 1.0 Reference Number: 538136 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS