HB834 Search Results

HB834

Contextual Info: PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HB834 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃

HD880

Abstract: HB834 KSB834
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON 对应国外型号 KSB834 HB834 █ 主要用途 TRANSISTOR █ 外形图及引脚排列 低频功率放大，伴音帧输出及电源调整 与 HD880 互补 TO-220 █ 极限值（Ta=25℃） T stg ——贮存温度………………………………… -55~150℃

Contextual Info: NETWORKING 10/100BASE-T • Four port interface for 10BASE-T Ethernet applications • Surface-mount package designed for IR reflow process 240°C peak • Dielectric Isolation is 1500Vrms minimum HB8xx: mechanical All dimensions are ±0.005 unless otherwise noted.

TX4-RX4

Abstract: rx2/tx2 HB819 HB820 HB824 HB834 HB820-1 HB825 HB828
Contextual Info: 10BASE-T Four Port Ethernet Magnetics Module HB8xx-Schematic #2, Rev. H 23 Apr 01 “xx” equals one of the circuit numbers in the table below the schematic. Other circuit schematics are available. Please contact us at (800) 511-7308 or visit our web site at www.trans-power.com.

B834

Abstract: Transistor B834 T B834 2SB834 HB834 2SB834HB834
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR B834 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A126AG-01 芯片厚度：240±20µm 管芯尺寸：1260x1260µm 2 焊位尺寸：B 极 308×308µm 2；E 极 308×385µm 2