TRANSISTOR B712 Search Results

TRANSISTOR B712 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF

TRANSISTOR B712 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718 Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages	OCR Scan	-335/h-135/d-40 -334/h-280/d-41 -334/h-28q/d-41 l-56sw-42/h-115 +13l-565/w-42/h-12 ot-23 sc-59 equivalent transistor tt 3034 transistor tt 3034 d718 transistor d718 equivalent transistor a769 tt 3034 transistor transistor d718 d718* transistor k d718 d718	PDF
Contextual Info: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7128	PDF
Contextual Info: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	awb7123	PDF
Contextual Info: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7127	PDF
Contextual Info: AWB7122 1805 MHz to 1880 MHz Small-Cell Power Amplifier Module preliminary data sheet - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7122	PDF
Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125	PDF
Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125	PDF
Contextual Info: AWB7122 1805 MHz to 1880 MHz Small-Cell Power Amplifier Module preliminary data sheet - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7122	PDF
AWB7127 Abstract: AWB7127HM41P8 Contextual Info: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7127 awb7127hm41p8	PDF
K 2545 transistor Abstract: transistor k 2545 Contextual Info: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7128 k 2545 transistor transistor k 2545	PDF
Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125	PDF
Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.4 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125	PDF
Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Ampliier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125	PDF
Contextual Info: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Ampliier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7127	PDF

AWB7123HM41P8 Abstract: awb7123 Contextual Info: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	awb7123 awb7123hm41p8	PDF
Contextual Info: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	awb7123	PDF
Contextual Info: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7128	PDF
Contextual Info: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7127	PDF
AWB7127 Abstract: AWB7127HM41P8 Contextual Info: AWB7127 2.11 GHz through 2.17 GHZ Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7127 awb7127hm41p8	PDF
Contextual Info: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	awb7123	PDF
Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125	PDF
AWB7 Contextual Info: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7125 awb7	PDF
AWB7127 Abstract: AWB7127HM41P8 Contextual Info: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	awb7127 awb7127hm41p8	PDF
AWB7123 Abstract: AWB7123HM41P8 Contextual Info: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	awb7123 awb7123hm41p8	PDF

TRANSISTOR B712 Search Results

TRANSISTOR B712 Result Highlights (5)

TRANSISTOR B712 Datasheets Context Search

equivalent transistor TT 3034

AWB7127

K 2545 transistor

AWB7123HM41P8

AWB7127

AWB7

AWB7127

AWB7123