TRANSISTOR B A O 331 Search Results

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP631,632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H I B A TLP631 and T L P632 consist of a p h o t o-transistor o p t i c a l l y coupled to a g a l l i u m arse n i d e infrared emitting d i o d e in

npn transistor dc 558

Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
Contextual Info: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the

3004x

Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
Contextual Info: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna

J295

Abstract: BU705 BU705D
Contextual Info: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency

J119 transistor

Abstract: enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104
Contextual Info: Ph » |P ^ « n jicon ducto» ^ ^ bfc,53^ 3 1 D DB^ fiM b M APX Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN C O N F IG U R A T IO N • High pow er gain • Low noise figure • G o o d therm al stability

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

Contextual Info: S IL IC O N M O N O L IT H IC B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT TD62504P-H 7eh SINGLE DRIVER : C O M M O N EMITTRER Th e T D 6 2 5 0 4 P -H is com prised o f seven o r five N PN Transistor Arrays. A p p lic a tio n s include relay, ham m er, lam p a n d disp lay

GK transistor 42

Abstract: transistor FET cd 332 m
Contextual Info: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G

bd142

Contextual Info: Power Transistors * _ X - 3 3 _ - 1 3 BD142 File Number HARRIS SEMICOND SECTOR - B7E< D High-Power Silicon N-P-N Transistor B M3D2S71 DGSGlDa 701 BIH AS •TERMINAL DESIGNATIONS General-Purpose Device For Commercial Use Features: • M a x im u m -sa fe -a re a -o f-o p e ra tio n curves

MRF2016M

Abstract: MRF201 MRF2016
Contextual Info: 12E D £ b3b?254 ÜOflñGSa 4 | MOT ORC LA SC MOTOROLA "33-11 XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF2016M T h e R F L in e 16 W 2 GHz M IC R O W A V E POW ER T R A N S IS T O R NPN SILICON MICROWAVE POWER TRANSISTOR N P N S IL IC O N . . . d esign ed for C la ss B and C com m on b a se broadband am plifier

transistor B A O 331

Abstract: transistor P 0.2 V D F 331 TRANSISTOR
Contextual Info: KSD1047 NPN PLANAR SILICON TRANSISTOR AUDIO P O W E R AM PLIFIER DC TO DC CO N VER TER • High Current Capability • High Power Dissipation» Complement to KSB817 A B S O L U T E MAXIMUM RATIN GS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage

BSP108

Abstract: transistor marking ST4
Contextual Info: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended

CA3046 equivalent

Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
Contextual Info: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input

transistor BC 331

Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182
Contextual Info: *BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H* Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit

a331j

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to

transistor B A O 331

Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
Contextual Info: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350

TBA331

Abstract: transistor d 331 VBE3-VBE41 d 331 Transistor D F 331 TRANSISTOR transistor 331 C 331 Transistor transistor h 331 331 transistor transistor d 331 data
Contextual Info: 07 D | s G S-THOMSON 0 7 E D I| 7 ^^22^ 23377 0 0 1 1 3 Q Ó7C 1 7 0 3 1 fi D T -V 5 -2 S -1 TBA331 LINEAR INTEGRATED CIRCUITS G ENERAL PURPOSE TRANSISTOR A R R A Y T h e T B A 3 3 1 is an arra y o f 5 m o n o lith ic N P N tra n sisto rs in a 14 -le a d d ua l in -lin e plastic package. T w o

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD5001 1ME 0 | 0007b3fl 7 NPN t r i p l e d if f u s e d PLANAR SILICON TRANSISTOR T -3 3 -t 3 C O LO R T V HORIZONTAL O U TPU T A PPLICA TIO N S DAMPER DIODE BUILT IN HIGH Collector-Base Voltage’ V«o=1500V A B S O LU T E MAXIMUM RATINGS (Ta= 2 5 ° C)

transistor A4t 45

Abstract: transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15
Contextual Info: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • E n h a n ce m e n t m ode Type Vbs <D f f DS on Package Ordering Code BU Z 50 A 1000 V 2.5 A 5 a T O -2 2 0 A B C 6 7 0 7 8-A 1 3 0 7 -A 3 Maximum Ratings Symbol Parameter Drain so u rce v o lta g e

DF 331 TRANSISTOR

Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
Contextual Info: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

p626

Abstract: IC P626 TLP626-1
Contextual Info: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled