TRANSISTOR B A O 33 ST Search Results

132/DD 127 D TRANSISTOR

Contextual Info: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

2SC3844

Abstract: 374171 reo4
Contextual Info: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range

Contextual Info: 33 ttftH E S S HM-8832 J a n u a ry 1992 32K x 8 Asynchronous CMOS Static RAM Module Features Description • Full CMOS Six Transistor Memory Cell T h e H M -88 3 2 is a 3 2 K x 8 B it A sy n c h ro n o u s C M O S S tatic R A M M o d u le b a se d on a m u ltila yere d , co-fired , d u a l-in -line

KE724502

Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
Contextual Info: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts

TRANSISTOR BI 237

Abstract: 2as1c 2SC3949
Contextual Info: FUJITSU MICROELECTRONICS 31E D C2 3 7 4 ci?t,B OOlbbSO 3 EIFMI r-33-f3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2SC3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS P aram ete r S ym bol S torage T e m p e ra tu re Range

transistor D 4515

Abstract: 224515 KS224515 ks2245
Contextual Info: 7 294621 P O W E R EX IÑC ~b5 d ÌT| 75^21 DDDDTOB fi f ~3 Single Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3 .1 5 0 + .0 2 0 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 T-33-35 150 Amperes J50/I Zvoîts M illim eters 94 Max .80 ± 0 .5

GP500

Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
Contextual Info: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

cs1w-cn226

Abstract: OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
Contextual Info: Compact PLC Series CPM2C Programmable Logic Contr. General The CPM2C Micro PLC is suitable as a controller for simple stand−alone machines, as well as a simple networked controller. One innovation is the new synchronisation instruction, which makes it possible to generate output pulse trains as a function of an input pulse

Contextual Info: K B 4 0 0 0 B u ild in g B lo c k K it for A LA 4 0 0 Fam ily S e m i-C u sto m Linear A rrays Description The KB4000 Building Block Kit contains a variety of components that gives designers the capability to breadboard analog circuits. With the building block kit, designers have a tool for evaluating the many

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

kd721K

Contextual Info: 7294621 POWE RE X INC ' m Tfl I>F| 7ET4LS1 DODSabl 4 N E R E K KD721KA2 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor Modules are designed for use in

LC100A

Contextual Info: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor

Philips film capacitors 27 pf

Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Contextual Info: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized

Contextual Info: T O SH IB A TENTATIVE TB6526F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB6526F CHOPPER-TYPE BIPOLAR STEPPING MOTOR CONTROL DRIVER 1C The TB6526F is a PW M chopper-type sinusoidal micro-step bipolar stepping motor driver 1C. It is capable of 1-2 and 2W1-2 phase excitation modes

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

transistor rf cm 1104

Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Contextual Info: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: - 7 ^ 3 9 - Philips Components Data sheet status Preliminary specification date of issue March 1991 R eplaces BUK543-100A/B N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor t07

Abstract: NEX2303 NE 2301 02cj NEX2300 NEX2301 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: NEC/ CALIFORNIA NEC b42?m4 0001202 S 1SE D .7 -3 3 r < 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H PO W ER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

BF115

Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
Contextual Info: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti­