TRANSISTOR B 886 Search Results

HMPS650

Abstract: audio transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures

GL5672

Contextual Info: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J

GMA06

Contextual Info: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J

GMBTA06

Contextual Info: ISSUED DATE :2003/07/15 REVISED DATE :2006/05/26B G M B TA 0 6 NPN SILICON TRANSISTOR Description The GMBTA06 is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35

GMBTA42

Contextual Info: ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B G M B TA 4 2 NP N EP ITAXIAL PL ANAR T RANS ISTO R Description The GMBTA42 is designed for high voltage transistor. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35

G8051S

Abstract: G8551 G8551S
Contextual Info: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8551S P N P E P I TA X I A L S I L I C O N T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR Description The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio

GJ8050

Abstract: GJ8550
Contextual Info: ISSUED DATE :2005/05/06 REVISED DATE : GJ8050 NPN EPITAXIAL TRANSISTOR Description The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features *High Collector current IC: 1.5A *Complementary to GJ8550

GI8050

Abstract: GI8550
Contextual Info: CORPORATION GI8550 ISSUED DATE :2005/05/06 REVISED DATE : PNP EPITAXIAL TRANSISTOR Description The GI8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features *High Collector current IC: 1.5A *Complementary to GI8050

GMBTA14

Abstract: GMBTA64
Contextual Info: G M B TA 6 4 1/2 PNP SILICON TRANSISTOR Description The GMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. Features High D.C. Current Gain For Complementary with NPN Type GMBTA14 Package Dimensions REF.

GM3019

Contextual Info: 1/1 GM3019 NPN EPITAXIAL PLANAR TRANSISTOR Description The GM3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30

GBC846

Contextual Info: 1/2 GBC846 NPN EPITAXIAL PLANAR TRANSISTOR Description The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40

he8050

Contextual Info: HI-SINCERITY Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2001.08.13 Page No. : 1/3 MICROELECTRONICS CORP. HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

GM2222A

Contextual Info: GM2222A 1/2 NPN EPITAXIAL PLANAR TRANSISTOR Description The GM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50

GM1213

Contextual Info: ISSUED DATE :2003/05/07 REVISED DATE :2004/12/14B GM1213 PNP EPITAXIAL PLANAR TRANSISTOR Description The GM1213 is designed for using in power amplifier applications or power switching applications. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min.

GM5551

Contextual Info: 1/2 GM5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The GM5551 is designed for for general purpose applications requiring high breakdown voltages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89

GSMBTA05

Contextual Info: ISSUED DATE :2005/08/31 REVISED DATE : G S M B TA 0 5 NPN SILICON TRANSISTOR Description The GSMBTA05 is designed for general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0.10 0.80 1.00 1.80 2.20 1.15

GLA27

Contextual Info: 1/2 G L A2 7 NPN TRANSISTOR Description The GLA27 is designed for darlington amplifier high current gain collector current to 500mA. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J 1 2

GSMBTA42

Contextual Info: ISSUED DATE :2005/08/31 REVISED DATE : G S M B TA 4 2 NP N EP ITAX I AL PL ANAR T RANSI STOR Description The GSMBTA42 is designed for high voltage transistor. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0.10 0.80 1.00 1.80 2.20 1.15

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

Contextual Info: Integrated Circuits Inc. aPR2060 T2.2 aPR2060 Datasheet 40 ~ 80 sec recording voice IC APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. TEL: 886-2-2782-9266 FAX: 886-2-2782-9255 WEBSITE : http://www.aplusinc.com.tw

Contextual Info: Integrated Circuits Inc. aPR2060 T2.1 aPR2060 Datasheet 40 ~ 80 sec recording voice IC APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. TEL: 886-2-2782-9266 FAX: 886-2-2782-9255 WEBSITE : http://www.aplusinc.com.tw

AN5296 Application of the CA3018 Integrated

Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
Contextual Info: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

FMBT2907

Abstract: FMBT2907A FMBT2222 FMBT2222A
Contextual Info: Formosa MS PNP Epitaxial Planar Transistor FMBT2907 / FMBT2907A List List. 1 Package outline. 2