TRANSISTOR B 886 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3c 31 0D23H3B l b 3 BLW91 X IAPX U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

SOT-23

Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Contextual Info: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2

GMBTA05

Contextual Info: G M B TA 0 5 1/2 NPN SILICON TRANSISTOR Description The GMBTA05 is Amplifier Transistor. Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30

HMPS650

Abstract: audio transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures

HMPS751

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6317-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPS751 PNP SILICON TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMPS651

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6326-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS651 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

1902 transistor

Abstract: H2N6426
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3 H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

H2N6427

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

1902 transistor

Abstract: darligton power transistor darligton transistor HMPSA26
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6308-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/3 HMPSA26 NPN SILICON TRANSISTOR Description The HMPSA26 is designed for using in darligton transistor. Absolute Maximum Ratings • Maximum Temperatures

1902 transistor

Abstract: H2N3417
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.

MPS3639

Abstract: transistor yr
Contextual Info: MPS3639 silicon PNP SILICON ANNULAR TRANSISTOR PNP SILICON SWITCHING TRANSISTOR . . designed for use in low-current, high-speed switching applications. Collector-Em itter Breakdown Voltage — B V c e S = 6 0 Vdc (Min) Fast Switching Tim e @ l c * 50 mAdc

BLW91

Abstract: high power npn UHF transistor blw91 transistor
Contextual Info: LSE » ES 7110fl2b □ 0fc.33ci5 457 « P H I N BLW91 PHILIPS INTERNATIONAL_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable fo r transm itting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

hbf423

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6403-B Issued Date : 1993.03.18 Revised Date : 2000.09.20 Page No. : 1/3 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Absolute Maximum Ratings • Maximum Temperatures

GL5672

Contextual Info: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J

BLW91

Abstract: 414 rf transistor blw91 transistor w884
Contextual Info: N AMER PHI L I P S/DISCRETE b^E D • ^ 53^31 I lb 3 iAPX BLW91 U.H.F. POWER T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u .h .f. and v .h .f. range fo r a nominal supply voltage of 28 V . The transistor is resistance stabilized and

GMA06

Contextual Info: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J

RT9641A

Abstract: 2x15 ATX 235 RT9230 RT9231 RT9641ACS2 RT9641B RT9641BCS2 RDRAM SOP CEB603AL equivalent
Contextual Info: RT9641A/B Triple Linear Regulator Controller Support ACPI Control Interface General Description The RT9641A/B, paired with either the RT9230 or powered through two external MOS transistors. In RT9231 simplifies the implementation of ACPI- sleep states, a PMOS or PNP transistor conducts

pj 0159

Contextual Info: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency

G2N7002

Contextual Info: 1/3 G2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS TRANSISTOR Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30

B32R

Abstract: GMBT1132 B32p
Contextual Info: ISSUED DATE :2005/06/28 REVISED DATE : G M B T 11 3 2 PNP EPITAXIAL PLANAR TRANSISTOR Description The GMBT1132 is designed for general purpose amplifier applications. Features Low VCE sat =-200mV(Typ.) (IC/IB=-500mA/-50mA) Package Dimensions REF. A B C D E

GMBTA06

Contextual Info: ISSUED DATE :2003/07/15 REVISED DATE :2006/05/26B G M B TA 0 6 NPN SILICON TRANSISTOR Description The GMBTA06 is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35

HSB764

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549-B Issued Date : 1996.11.25 Revised Date : 2000.10.01 Page No. : 1/4 HSB764 PNP EPITAXIAL PLANAR TRANSISTOR Description Voltage regulator, Relay driver, electrical equipment application. Absolute Maximum Ratings

G8050S

Abstract: G8550S
Contextual Info: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio

G8051S

Abstract: G8551S
Contextual Info: ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio