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    TRANSISTOR B 882 P Search Results

    TRANSISTOR B 882 P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy

    TRANSISTOR B 882 P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VOLTAGE CONTROLLED TOM9335 OSCILLATOR 750-940 MHz Available as: TOM 9335, 4 Pin TO-8 T4 TON9335, 4 Pin Surface Mount (SM3) B X09335, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Broad Tuning Range Operating Case Temp. -40 °C to + 85 °C


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    OM9335 ON9335, X09335, PDF

    Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is


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    BLX69A bb53c bb53131 PDF

    Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA PDF

    PNP 200V 2A SOT89

    Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
    Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A PDF

    BLW90

    Abstract: fi37
    Contextual Info: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


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    BLW90 BLW90 fi37 PDF

    2SC5012-T1

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


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    2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1 PDF

    pd26 do 214

    Abstract: BT 816 HD64F7145 SH7144 SH7145 philips bc marking r13k Nippon capacitors
    Contextual Info: REJ09B0108-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7144 Group, SH7145 Group Hardware Manual


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    REJ09B0108-0400 SH7144 SH7145 32-Bit Family/SH7144 SH7114 HD64F7144 HD6437144 HD6417144 SH7145 pd26 do 214 BT 816 HD64F7145 philips bc marking r13k Nippon capacitors PDF

    DTC114TS

    Contextual Info: V~P>V DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV / T ransistors D TC 114 T U /D T C 114 T K /D T C 114TS DTC114T F /D T C 114T L /D T C 114TA D TC 114TV h 7 > y ^ ^ ‘i "J •^■/Transistor Switch Digital Transistors Includes Resistors


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    DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV 114TS DTC114T 114TA 114TV DTC114TS PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


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    L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G PDF

    Solar Garden Light Controller 4 pin

    Abstract: 1.5V solar garden light 1.2V solar garden light ZXLD383 ZXLD383ET5TA solar garden led Solar Garden Light garden light Solar Charge Controller single cell NiMH ic solar cell lamp
    Contextual Info: A Product Line of Diodes Incorporated ZXLD383 Single or multi cell LED driver with enable/rectifier input for solar charged lamp applications Description Summary The ZXLD383 is a single or multi cell LED driver designed for applications requiring step-up voltage conversion from a very low


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    ZXLD383 ZXLD383 The91362-3154 D-81541 Solar Garden Light Controller 4 pin 1.5V solar garden light 1.2V solar garden light ZXLD383ET5TA solar garden led Solar Garden Light garden light Solar Charge Controller single cell NiMH ic solar cell lamp PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


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    LDTA124EET1 SC-89 PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon NPN Epitaxial Planer Transistor Tr1 Silicon PNP Epitaxial Planer Transistor(Tr2) L4601D*W1T1G Pb-Free package is available SC88 Tr1 MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage


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    L4601D PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    LDTA123EET1 SC-89 PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    LDTA143EET1 SC-89 PDF

    ahr 49 transistor

    Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


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    L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon Transistor L2SC5658M3T5G This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board


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    L2SC5658M3T5G OT-723 7-inch/3000 OT-723 PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


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    LMSD1819A-RT1G SC-70/SOT-323 SC-70/SOTâ PDF

    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


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    DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3 PDF

    Contextual Info: SERVO MOTOR CONTROLLER NJM2611 The NJM 2611 is an integrated circuit to be applied on servo m otor of radio controlled operation. W ide range of operating voltage, and the NJM 2611 has the feature of internal circuit o f m aintaining constant voltage which helps


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    NJM2611 700mW 600mA 01/iF 680kQ PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA113ZLT1G FFeatures 1) The built-in bias resistor allows the configuration of an inverter circuit without connecting any external input resistors (see Equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be positively


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    LDTA113ZLT1G OT-23 PDF

    2SC857

    Abstract: 2SA536 2sc 865 RF transistor 2SC15-0 138B 2SA535
    Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    100nS Te-25 2SC857 2SA536 2sc 865 RF transistor 2SC15-0 138B 2SA535 PDF

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS


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    LMBT918LT1G 3000/Tape LMBT918LT3G 10000/Tape 236AB) PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SC4097RT1G L2SC4097RT1G 3 zFeatures 1 High ICMax. ICMax. = 0.5mA 2) Low VCE sat). Optimal for low voltage operation. 3) Pb-Free Package is available. 1 2 SC-70 (SOT-323) 3 COLLECTOR MAXIMUM RATINGS (TA = 25°C)


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    L2SC4097RT1G SC-70 OT-323) 360mm PDF