TRANSISTOR B 834 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BLW 82

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

BFQ295

Abstract: BFQ296
Contextual Info: Philip^emiçonductore ^ b b 5 3 T 31 Q0317flfl b 37 W A P X Prelim inary specification PNP HDTV video transistor BFQ295 N AUER FEA TU R ES PHILIPS/DISCRETE b^E PINNING PIN • High breakdown voltages • Low output capacitance 1 emitter DESCRIPTION • High gain bandwidth product

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

BUZ 835

Contextual Info: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

Contextual Info: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23

Contextual Info: 2SA1834 2SC5001 Transistors DC-DC converter Low V ce (sat) Transistor (— 20V, — 10A ) 2S A 1834 ^ A b s o lu te m a x im u m ra tin g s (T a = 2 5 "C ) •F e a tu re s 1 ) Low Vce(Mi). ( T y p .-0 .1 6 V at Ic/I b= — 4V /— 50m A) 2 ) High current capacity. ( Ic = — 10A/DC> — 15A/10m s pulse)

BFQ295

Abstract: BFQ296 sot128b
Contextual Info: Preliminary specification Philips Semiconductors PNP HDTV video transistor '7 ^ 3 3 5bE T> PH IL IP S I N T E R N A T I O N A L FEATURES • BFQ295 7110fl2b DD M5 b ? 7 132 ■ P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

mje 1303

Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

kec kta

Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
Contextual Info: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)

em 483

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /IPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • H igh fT

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD ^ D S o n • BUZ 42 = 500 V = 4.0 A = 2.0 Q N channel • Enhancem ent mode • A valan che-p roo f • Package: T Q -2 2 0 A B ') Type Ordering code BUZ 42 C 6 70 78-A 13 1 1 -A2 Symbol Values Unit D rain-source voltage

2sc 9015

Abstract: 2236A 2482 TRANSISTOR 9014 to-92 KTC2229 2SC 9012 966a KTC9016 ktp87 9015 TO-92
Contextual Info: @] TV TRANSISTOR USE TYPE VC E 0 V 7K O ELECTRICAL CHARACTERISTICS (Ta = 2 5 C ) MAXIMUM RATINGS lC pC T. ICBO (mA) (mW) <°C) (M A) hFE V c e (M t) MAX VCB [E V CE k' (V) (m A) (V) (mA) (V) Ic Ib (m A) (mA) (MHz) Z*J C o b , * Cre T yp (MIN) h VCE lc (V)

A102 TRANSISTOR

Abstract: SGA-4563Z SGA-2463Z sga-8343z JESD22-A103 SGA8343Z
Contextual Info: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGL-0263Z/0163Z 303 S. Technology Ct, Broomfield CO, 80021

834x

Abstract: S-8340 S-8340A25AFT-T2 S-8340A30AFT-T2 S-8340A33AFT-T2 S-8341 S-8341C50 UH28M S8340B00AFT
Contextual Info: Rev.2.1_60 PWM Control & PWM/PFM Control S-8340/8341 Series High-Frequency Step-Up Switching Regulator-Controllers The S-8340/8341 Series consists of CMOS step-up switching regulatorcontrollers with PWM control S-8340 and PWM/PFM switched control (S8341). These devices contain a reference voltage source, oscillation circuit,

SGA-3563Z

Abstract: SGA5263Z SGA-4563Z SGA-5263z A102 TRANSISTOR ESD test plan SGA-8343Z sga8343z SGA3563Z SGA-0363Z
Contextual Info: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z SGL-0263Z/0163Z 303 S. Technology Ct, Broomfield CO, 80021

8340 diode

Abstract: S-8340 S-8341
Contextual Info: Rev.3.1_00 STEP-UP, 600 kHz, PWM CONTROL OR PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8340/8341 Series The S-8340/8341 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, oscillation circuit, error amplifier, phase compensation circuit, PWM

Different types of PWM ICs

Abstract: SL 100 NPN Transistor FDN335N S-8340 S-8341 8341b Matsua rs 24v
Contextual Info: Rev.3.0_01 STEP-UP, 600 kHz, PWM CONTROL OR PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8340/8341 Series The S-8340/8341 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, oscillation circuit, error amplifier, phase compensation circuit, PWM

sga8343z

Abstract: SGA-3563Z SGA-4563Z SGL0363z SGA 4563Z sgl-0363z SGA-0163Z SGL-0363 JESD22-A104B SGA-8343Z
Contextual Info: Reliability Qualification Report SGA-5263Z Products Qualified by Similarity SGA-4563Z/4463Z/4363Z/4263Z/4163Z SGA-3563Z/3463Z/3363Z/3263Z SGA-2463Z/2363Z/2263Z/2163Z SGA-1263Z/1163Z SGA-0363Z/0163Z SGA-8343Z/8543Z SGC-2363Z/2463Z/4363Z/4463Z SGL-0163Z/0263Z/0363Z