TRANSISTOR B 764 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

TRIMMER cap no-2222 809 07015

Abstract: BD433 BLW77
Contextual Info: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­

A 7800

Abstract: a7800
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module

A7800

Abstract: a 7800
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module

BLW77

Abstract: neutralization push-pull philips Trimmer 60 pf
Contextual Info: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

BFQ 42 transistor

Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,

8 pin ic lm 745

Contextual Info: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.

Contextual Info: Philips Semiconductors b b s a 'm D D B D D B fl IT T M APX Product specification VHF push-pull power MOS transistor BLF278 N AUER PHILIPS/DISCRETE b'lE 1> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

transistor B 764

Contextual Info: UMA1N/FMA1A h 7 y' V 7s £ /Transistors /Dual Mini-Mold Transistor U M A F M 1 N A 1 A i M$ * y —yf& PNP y |J 3 > h 7 > y ^ i ' Epitaxial Planer PNP Silicon Transistor «f M/Inverter Driver • ii-ffi^tÜ /Dimensions U nit: mm 2 l B r o x '> '$ ; u ir t j®

TRANSISTOR C 2577

Abstract: transistor A62
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector

SG 2058

Abstract: transistor A62
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector

MARKING CODE 24

Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification

ic 7824

Abstract: 7824 BT T460-8525
Contextual Info: -T — S • S /— h Com pound Transistor BN1L4L S # lF *3M P N P J i b ° ^ i s - D V M i s ' □ > & ft o '< 4 fa m i t 2.0 +0.2 R i = 47 kQ, R 2= 22 kQ) o B A 1 L 4 L £ n > Y>J / > ? 'J t f f f l t è HO *& Ì*Ìi*5È tè (Ta = 25 °C) 9.9 • B& fé

MRF517

Abstract: 2761 l transistor 336 motorola OB2200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

transistor 2038

Abstract: 2SA1729 S60S6
Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage

CMOS drum generator

Abstract: HT3020D 7465 holtek drum
Contextual Info: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package

ic 7465

Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator
Contextual Info: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators

BUZ171

Contextual Info: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs 1D flbS on Package Ordering Code BUZ171 -50 V -8 A 0.3 n TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 30 °C

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

Contextual Info: BUZ 272 In fin e o n technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs b BDS on Package Ordering Code BUZ 272 -100 V -15 A 0.3 Q. TO-220 AB C67078-S1454-A2 Maximum Ratings Symbol Parameter Continuous drain current