Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR B 764 Search Results

    TRANSISTOR B 764 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy

    TRANSISTOR B 764 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan
    BLW77 28The PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    PDF

    TRIMMER cap no-2222 809 07015

    Abstract: BD433 BLW77
    Contextual Info: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan
    BLW77 TRIMMER cap no-2222 809 07015 BD433 BLW77 PDF

    A 7800

    Abstract: a7800
    Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module


    OCR Scan
    00Q2D25 A 7800 a7800 PDF

    A7800

    Abstract: a 7800
    Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module


    OCR Scan
    34032T7 00Q2D25 A7800 a 7800 PDF

    BLW77

    Abstract: neutralization push-pull philips Trimmer 60 pf
    Contextual Info: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan
    D0b3277 BLW77 7110flSh 7Z77473 7Z77475 BLW77 neutralization push-pull philips Trimmer 60 pf PDF

    BFQ 42 transistor

    Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES


    OCR Scan
    BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor PDF

    Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan
    BUK452-100A/B BUK472-100A/B BUK472 -100A -100B PINNING-SOT186A -ID/100 PDF

    8 pin ic lm 745

    Contextual Info: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.


    OCR Scan
    BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745 PDF

    Contextual Info: Philips Semiconductors b b s a 'm D D B D D B fl IT T M APX Product specification VHF push-pull power MOS transistor BLF278 N AUER PHILIPS/DISCRETE b'lE 1> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan
    BLF278 OT262 OT262A1 MCA982 PDF

    transistor B 764

    Contextual Info: UMA1N/FMA1A h 7 y' V 7s £ /Transistors /Dual Mini-Mold Transistor U M A F M 1 N A 1 A i M$ * y —yf& PNP y |J 3 > h 7 > y ^ i ' Epitaxial Planer PNP Silicon Transistor «f M/Inverter Driver • ii-ffi^tÜ /Dimensions U nit: mm 2 l B r o x '> '$ ; u ir t j®


    OCR Scan
    200mW transistor B 764 PDF

    TRANSISTOR C 2577

    Abstract: transistor A62
    Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector


    OCR Scan
    PRF957 OT323 AM062 /printrun/ed/pp14 TRANSISTOR C 2577 transistor A62 PDF

    SG 2058

    Abstract: transistor A62
    Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector


    OCR Scan
    PRF947 OT323 MAM062 /printrun/ed/pp14 SG 2058 transistor A62 PDF

    MARKING CODE 24

    Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification


    OCR Scan
    PDTC114TE PDTC114TE 115104/00/02/pp8 MARKING CODE 24 PDF

    ic 7824

    Abstract: 7824 BT T460-8525
    Contextual Info: -T — S • S /— h Com pound Transistor BN1L4L S # lF *3M P N P J i b ° ^ i s - D V M i s ' □ > & ft o '< 4 fa m i t 2.0 +0.2 R i = 47 kQ, R 2= 22 kQ) o B A 1 L 4 L £ n > Y>J / > ? 'J t f f f l t è HO *& Ì*Ìi*5È tè (Ta = 25 °C) 9.9 • B& fé


    OCR Scan
    PWS10 CycleS50 ic 7824 7824 BT T460-8525 PDF

    MRF517

    Abstract: 2761 l transistor 336 motorola OB2200
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n


    OCR Scan
    MRF517 MRF517 2761 l transistor 336 motorola OB2200 PDF

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan
    2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking PDF

    transistor 2038

    Abstract: 2SA1729 S60S6
    Contextual Info: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage


    OCR Scan
    2SA1729 -T-37-/Ã 250mm2 transistor 2038 2SA1729 S60S6 PDF

    CMOS drum generator

    Abstract: HT3020D 7465 holtek drum
    Contextual Info: HOLTEK r r HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package


    OCR Scan
    HT3020A/B/C/D HT3020A/B/C/D HT3020A 240Kn HT3020B HT3020C HT3020D HT3020A, CMOS drum generator HT3020D 7465 holtek drum PDF

    ic 7465

    Abstract: HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator
    Contextual Info: HT3020A/B/C/D One Rhythm Generator Features • • • • Operating Voltage: 2.4V~5.0V Directly drive an external transistor Low stand-by current One percussion instrument • • • One demo song End-pulse output 16 pin dual-in-line package • Sound effect generators


    Original
    HT3020A/B/C/D HT3020A/B/C/D HT3020A HT3020B HT3020C HT3020D ic 7465 HT3020B D 727 Transistor 7465 HT3020A HT3020C HT3020D Rhythm Percussion Generator CMOS drum generator PDF

    BUZ171

    Contextual Info: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs 1D flbS on Package Ordering Code BUZ171 -50 V -8 A 0.3 n TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 30 °C


    OCR Scan
    BUZ171 O-220 C67078-S1450-A2 BUZ171 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs


    OCR Scan
    125002/00/03/pp12 PDF

    2SC3773

    Abstract: SANYO SS 1001
    Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band


    OCR Scan
    n707b 2SC3773 1946B 2SC3773 SANYO SS 1001 PDF

    Contextual Info: BUZ 272 In fin e o n technologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vbs b BDS on Package Ordering Code BUZ 272 -100 V -15 A 0.3 Q. TO-220 AB C67078-S1454-A2 Maximum Ratings Symbol Parameter Continuous drain current


    OCR Scan
    O-220 C67078-S1454-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 PDF