TRANSISTOR B 595 Search Results

BST122

Contextual Info: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.

Contextual Info: Philips Semiconductors b bS 3T 31 0 031544 543 APX Product specification PNP 4 GHz wideband transistor BFQ32S N AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast

2SC5086

Contextual Info: TOSHIBA 2SC5086 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S2lel2—lld B f= 1GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Contextual Info: J U fa i Coming Attractions M a n A M P ci o m p a n y Avionics Puised Power Transistor, 282W, TACAN Format 1025 -1150 MHz PH1012-282 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base C onfiguration B roadband Class C O peration

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n

QM15TB-24

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 1 5T B -24 • lc • Vcex • hFE Collector current. 15A Collector-emitter voltage.1200V DC current gain. 75

Contextual Info: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n

transistor 911

Contextual Info: m an A M P com pany CW Bipolar Power Transistor, 4W 2.3 GHz PH2323-4 Features • NPN Silicon M icrow ave Pow er Transistor • C om m on Base C on figu ration • C lass C O p eratio n • • • • Interdigitated G eo m etry D iffused Em itter B allasting Resistors

Contextual Info: M a n A M P com pany Radar Pulsed Power Transistor, 4W, 100p.s Pulse, 10% Duty 1.2-1.4 GHz PH1214-4M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d Class C O p eratio n Interdigitated G eo m etry

417 TRANSISTOR

Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417
Contextual Info: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs

F10G

Contextual Info: A jt& w m m an A M P com pany RF MOSFET Power Transistor, 10W, 28V 500 -1000 MHz - A — - B -— r— Features • • • • • • LF2810A N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for B roadband O peration Com m on Source Configuration

6010.5

Contextual Info: an A M P com pany Radar Pulsed Power Transistor, 80W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-80M Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n H igh Efficiency Interdigitated G eo m etry

Contextual Info: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n

PW400

Abstract: transistor b 595
Contextual Info: m M a n A M P com pany Radar Pulsed Power Transistor, 2W, lOO^s Pulse, 10% Duty 1.2-1.4 GHz PH1214-2M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p eration Interdigitated G eo m etry

LA 4288

Contextual Info: m an A M P com pany Radar Pulsed Power Transistor, 90W, 2 is Pulse, 10% Duty 3.1-3.5 GHz PH3135-90S Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n High Efficiency Interdigitated G eo m etry

Contextual Info: Ajfem *À m an A M P com pany Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-20EL Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n

UF2840G

Abstract: transistor C 245 b
Contextual Info: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n

transistor 12W

Contextual Info: / M Ì K H m an A M P com p a n y Radar Pulsed Power Transistor, 12W, 150ns Pulse, 10% Duty 1 .2 -1 .4 GHz PH1214-12M V2.00 Features • • • • • • • • b/a NFN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n

L930

Contextual Info: w art A M P c o m p a n y Radar Pulsed Power Transistor, 65W, 100 is Pulse, 10% Duty 3.1-3.4 GHz PH3134-65M Features • NPN Silicon M icrow ave P o w er T ran sisto r • C o m m o n B ase C o n figu ratio n • B ro ad b an d C lass C O peratio n • •

Contextual Info: a n A M P com pany Radar Pulsed Power Transistor, 65W, 100 xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-65M 9 DO VS? 86 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n

transistor c s z 44 v

Contextual Info: 4JÄ C O M w an A M P com pany CW Power Transistor, 1W 2.3 GHz PH2323-1 V2.00 Features • • • • • • • NPN S ilicon M icrow ave P o w er Transistor C o m m o n Base C on figuration C lass C O p eratio n Interdigitated G eo m etry D iffused Em itter B allasting Resistors

Contextual Info: /M ÌK m an A M P com pany Radar Pulsed Power Transistor, 220W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-220M V2.00 Features NHN Silicon M icrow ave P o w er T ran sistor C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O peratio n H igh Hfficiency In terd igitated G eo m etry

t4877

Contextual Info: M m anfaA M PCcomim pany Radar Pulsed Power Transistor, 20W, 100 is Pulse, 10% Duty 2.9-3.1 GHz PH2931-20M Features • • • • • • • • NFN Silicon M icrowave Pow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ratio n