TRANSISTOR B 40 IC-5A DATASHEET Search Results

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

V23990-P81-A20-PM

Contextual Info: datasheet version 02/03 V23990-P81-A20-PM flow PIM 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode

tyco igbt

Abstract: V23990-P54X-A V23990-P541-A K3028
Contextual Info: V23990-P541-A final datasheet Version 05/03 flow PIM 0, 600V Maximum values Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom Surge forward current

tyco igbt

Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Contextual Info: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

1084-VV

Abstract: AP1084
Contextual Info: This Anachip version datasheet is replaced with Diodes Inc. datasheet AP1084 AP1084 5A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features • • • • • • • „ General Description AP1084 is a low dropout positive adjustable or fixedmode regulator with minimum of 5.0A output current

Contextual Info: KSC2334 KSC2334 High Speed Switching Industrial Use • Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted 1.Base 2.Collector Parameter 3.Emitter Symbol VCBO Collector-Base Voltage Value

FJB3307D

Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

FJP3307D

Abstract: electronic ballast with npn transistor
Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram

Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings

BDW93

Abstract: BDW93C BDW94 BDW94A BDW94B BDW94C
Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted

Contextual Info: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector

bu406 cross

Abstract: BU406TU
Contextual Info: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

trace code TO-220

Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram

ZHD100

Abstract: zetex t1048 SM-8 Package T1048 pnp npn dual emitter connected motor driver full bridge 10A 100V MH88615 ZDT1048 MOULDED BRIDGES ic siren
Contextual Info: Application Note 24 Issue 2 January 1996 An Introduction to the SM-8 Package Mike Townson Introduction Over recent years the benefits for companies to move to surface mount technology has lead to significant growth in the component industry. The requirements on the component

Contextual Info: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage

POWER TRANSISTOR Cross

Contextual Info: KSD362 KSD362 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage

Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

KSA1010OTU

Contextual Info: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

FJPF13007

Abstract: electronic ballast with npn transistor
Contextual Info: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter