TRANSISTOR AUDIO AMPLIFIER APPLICATION NOTE Search Results

La 7676

Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES

UPA509TA

Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Contextual Info: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor

M28S

Abstract: M28SL M28S Equivalent Transistor Audio Amplifier Application Note M28SL TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio output driver amplifier * General purpose switch

M28S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1  FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation  3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch

M28S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch

M28S

Abstract: transistor m28s
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch

M28S

Abstract: transistor m28s
Contextual Info: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE

transistor m28s

Contextual Info: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE

2SA562TM

Abstract: 2SC1959
Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.

Contextual Info: SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTD1047B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING

Contextual Info: SEMICONDUCTOR KTC5197 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Recommended for 55W Audio Frequency Amplifier Output Stage. ・Complementary to KTA1940. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING

ULN3718M

Abstract: power transistor audio amplifier 500 watts ULN3718 allegro radio 500 uf 1000 watts audio amplifier
Contextual Info: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Data Sheet 27117.25 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other

GP-009

Abstract: ULN3718M
Contextual Info: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio amplifier’s wide

HN1B04F

Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

HN4B04J

Contextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

Contextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

KTB2955

Abstract: KTD3055
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB2955. • Recommended for 30W —35W Audio Frequency Amplifier output Stage. MILLIMETERS

Contextual Info: HN4B04J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B04J Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

HN1B04F

Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

2SB1115

Abstract: 2SC1615 2SD1615 2SD1615A
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1615, 1615A NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

TIP33C

Abstract: TIP34C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP34C EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45W —50W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT

KTB2955

Abstract: KTD3055 0,01 k 400mk
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTB2955 TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTD3055. • Recommended for 30W —35W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT