TRANSISTOR AUDIO AMPLIFIER APPLICATION NOTE Search Results

M28S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD M28S NPN SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER 1 „ FEATURES TO-92 * Excellent HFE Linearity * High DC Current Gain * High Power Dissipation „ 3 APPLICATION * Audio Output Driver Amplifier * General Purpose Switch

transistor m28s

Contextual Info: UTC M28S NPN EPITAXIAL SILICON TRANSISTOR AUDIO OUTPUT DRIVER AMPLIFIER FEATURES *Excellent HFE linearity *High DC Current Gain *High Power Dissipation 1 APPLICATION *Audio output driver amplifier *General purpose switch TO-92 1:EMITTER 2:COLLECTOR 3:BASE

2SA562TM

Abstract: 2SC1959
Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.

GP-009

Abstract: ULN3718M
Contextual Info: 3718 LOW-VOLTAGE AUDIO POWER AMPLIFIER Providing a low-cost, compact alternative to discrete transistor amplifiers, the ULN3718M integrated circuit is ideal for application as a headphone driver in portable radios, tape players, and other battery-operated equipment. The low-power audio amplifier’s wide

Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP33C EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP34C. • Recommended for 45W—50W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP34C EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45W—50W Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

KTB817b

Contextual Info: SEMICONDUCTOR KTD1047B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES ・Complementary to KTB817B. B Q K F ・Recommended for 60W Audio Frequency R G H I C J Amplifier Output Stage. D MAXIMUM RATING Ta=25℃

Contextual Info: TA8262H TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8262H Max Power 43 W BTL x 4CH Audio Power IC The TA8262H is 4 ch BTL audio power amplifier for car audio application. This IC can generate more high power: POUT MAX = 43 W as it is included the pure complementary PNP and NPN transistor

KTB688

Abstract: KTD718 ktd718 datasheet
Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC

KSA928A

Abstract: KSC2328A
Contextual Info: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSA928A TRANSISTOR（ PNP ） TO-92L FEATURE Audio power amplifier Complement to Application 1.EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

2sc232a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

TIP35CA

Contextual Info: SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 75W Audio Frequency H I Complementary to TIP36CA. R C J Amplifier Output Stage. G Icmax:25A. D L E MAXIMUM RATING Ta=25

KSA1281

Contextual Info: KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

transistor A1281

Abstract: a1281 A1281 TRANSISTOR A1281 Y KSA1281YBU KSA1281
Contextual Info: KSA1281 KSA1281 Audio Power Amplifier • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : V D g g = —180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SK2013

2sa928a

Abstract: 2SC2328A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A 1 TO-92NL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

STD1862

Abstract: TRANSISTOR stb1277 STB1277
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors STB1277 TRANSISTOR PNP TO-92 FEATURES z Audio power amplifier z High current application z High current : IC=-2A z Complementary pair with STD1862 1. EMITTER 2. COLLECTOR

2sk2013 2SJ313

Abstract: 2SJ313 2SK2013
Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313

k2013

Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)

A928A

Abstract: transistor A928A QW-R202-003 A928A TRANSISTOR
Contextual Info: UTC A928A PNP EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES *Collector Dissipation Pc=1 Watt *3 Watt Output Application 1 TO-92L 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified PARAMETER SYMBOL

2SD1221

Contextual Info: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)

2SK2013

Abstract: Audio Power Amplifier TOSHIBA Toshiba Audio power amplifier toshiba 2sj313 2SJ313 Toshiba 2SJ
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)