HN1B04F Search Results

HN1B04FE

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft Excellent hFE linearity
Contextual Info: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400

E22B2

Abstract: HN1B04FE
Contextual Info: HN1B04FE 東芝トランジスタ シリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FE ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。

HN1B04F

Contextual Info: HN1B04F 東芝トランジスタ シリコンPNP･NPNエピタキシャル形 PCT方式 HN1B04F ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 単位: mm Q1 • 直流電流増幅率の電流依存性が優れています。

Contextual Info: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400

Contextual Info: T O S H IB A TOSHIBA TRANSISTOR HN1B04FU SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N 1 B 4 F U Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 . 1± 0.1 1.25 ± 0 . 1 n6 r - i4 |L—_Lr 2 43 S9'0

HN1B04F

Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

HN1B04FE

Contextual Info: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400

HN1B04FU

Contextual Info: HN1B04FU 東芝トランジスタ シリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。

HN1B04F

Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

HN1B04F

Abstract: HN1B04
Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

HN1B04FU

Contextual Info: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400

Contextual Info: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400

HN1B04FE

Contextual Info: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400

Contextual Info: HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400

MARKING e1v

Contextual Info: TOSHIBA HN1B04FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl ZI F II Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2. 1± 0.1 1.2 5 ± 0.1 Ql: High Voltage and High C urrent

HN1B04FU

Contextual Info: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400

Contextual Info: HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity

HN1B04FU

Contextual Info: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400

HN1B04FU

Contextual Info: HN1B04FU 東芝トランジスタ シリコンNPN･PNPエピタキシャル形 PCT方式 HN1B04FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = 50V コレクタ電流が大きい。 : IC = 150mA (最大) 電流増幅率が高い。

HN1B04FU

Contextual Info: HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mm Audio Frequency General Purpose Amplifier Applications Q1:High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400

85500 transistor

Abstract: MZB1001T02 MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker
Contextual Info: 仕様書番号 ：MZB1001T02_Ver.2.0 Drawing No. P. 1/18 仕 様 書 Specification of Piezoelectric Microblower MZB1001T02 承 認 Approved by 決定年月日 Date 確 認 Checked by 担 当 Issued by October 11, 2011 1. 適用 Scope 当納入仕様書は一般電子機器製品に使用する圧電マイクロブロア 以下、ブロア について規定します。

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)