TRANSISTOR ARRAY 12V Search Results

Contextual Info: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array

18P4G

Abstract: 20P2N-A M63807FP M63807KP M63807P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

18P4G

Abstract: 20P2N-A M63805FP M63805KP M63805P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform

18P4G

Abstract: 20P2N-A M63817FP M63817KP M63817P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform

LB1233

Abstract: LB1234 Array Of Independent Diodes, Dip16 LB1231 LB1232 IN4 diode
Contextual Info: Ordering number : EN1188F Monolithic Digital IC LB1231 Series High-Voltage, Large Current Darlington Transistor Array Overview The circuit configuration of this IC is of 7-channel Darlington transistor array consisting of NPN transistors. It is especially

M63802FP

Abstract: M63802GP M63802KP M63802P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M63804FP

Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

transistor kp

Abstract: M63802FP M63802GP M63802KP M63802P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M63804FP

Abstract: M63804GP M63804KP M63804P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

DIP18

Abstract: LB1741 mm 105k BUT 11 Transistor
Contextual Info: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.

IC 4094

Abstract: LB1741 DIP18
Contextual Info: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.

M63812KP

Abstract: M63812P M63812FP M63812GP M63812 KP300
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

8-channel PNP darlington array

Abstract: 8-channel darlington array 3007A-DIP18 EN3173B LB1740 DIP18 "Diodes" sanyo
Contextual Info: Ordering number:EN3173B Monolithic Digital IC LB1740 8-Channel, Current-Source Output, Darlington Transistor Array Overview Package Dimensions The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors and NPN transisitors.High output drive capability for

8-channel PNP darlington array

Abstract: transistor 3007A 3007A-DIP18 EN3173B DIP18 LB1740 DARLINGTON TRANSISTOR ARRAY
Contextual Info: Ordering number:EN3173B Monolithic Digital IC LB1740 8-Channel, Current-Source Output, Darlington Transistor Array Overview Package Dimensions The LB1740 is an 8-channel current source output Darlington transistor array made up of PNP transistors and NPN transisitors.High output drive capability for

M63814FP

Abstract: M63814GP M63814KP M63814P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current

Contextual Info: 7^^707fc. 0015033 ^51 Ordering num ber: EN 266D LB1287.1288 N0.266D Monolithic Digital IC SA\YO i Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to

LM389

Abstract: LM389N LM386 "transistors Vceo" "low voltage audio power amplifier"
Contextual Info: LM389 LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Literature Number: SNOSBT9A LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Low quiescent current drain Voltage gains from 20 to 200 Y Ground referenced input Y Self-centering output quiescent voltage

IR2C32

Abstract: MWRC
Contextual Info: 7-Unit 60mA Transistor Array IR2C32A • IR2C32A 7-Unit 60mA Transistor Array Description Pin Connections The IR2C23A is a 7-circuit driver. ■ Features 1. Output breakdown voltage BVCeo = 20V MAX. 2. Output current capability Ioirr= 60mA (MAX.) 3. 16-pin dual-in-line package

LB1287

Abstract: LB1288 2663 transistor
Contextual Info: Ordering number:ENN266E Monolithic Digital IC LB1287, 1288 Darlington Transistor Array Overview Package Dimensions These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in

LB1287

Abstract: LB1288
Contextual Info: Ordering number:ENN266E Monolithic Digital IC LB1287, 1288 Darlington Transistor Array Overview Package Dimensions These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in

LB1287

Abstract: 2663 transistor booc power transistors LB1288
Contextual Info: 266E Ordering number : EN , Monolithic Digital 1C LB1287.1288 N0.266E Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equip­

18P4G

Abstract: 20P2N-A M63817FP M63817KP M63817P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays