TRANSISTOR ARK 05 Search Results

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

J 420 G

Contextual Info: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

IRG4PF50W

Contextual Info: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O ptim ized fo r use in W elding and S w itch -M ode P ow er S up ply applications • Industry benchm ark switching losses im prove efficiency o f all pow er supply topologies

D40 transistor

Abstract: transistor 5167 PZTA14 5Ci transistor
Contextual Info: MPSA14 I MMBTA14 / PZTA14 & D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r " PZTA14 MMBTA14 MPSA14 SOT-23 SOT-223 M ark: 1 N NPN Darlington Transistor T h is d e v ice is d e s ig n e d for a p p lica tio ns requiring extrem ely

WPTS-512

Abstract: npn photo transistor phototransistor 600 nm time phototransistor 580 1050nm
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-512 1. General Description: The WPTS-512 is a high sensitivity NPN silicon phototransistor mounted in a 05mm flat head and water clear resin package. This phototransistor permits wide angular response. Dimensions

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by m t d f i n o 2h d /d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 02H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by m t d f i p o 2 h d / d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D F 1P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

S600M

Abstract: XR-T5992
Contextual Info: XR-T5992 z e r EX A R A D V A N C ED IN FO R M A TIO N Pulse Dialer FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION T h e X R - T 5 9 9 2 pulse dialer is a silicon gate C M O S inte­ grated circuit w hich converts push-button Inputs Into pulses to simulate a rotary telephone dial.

Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

Contextual Info: REFLECTIVE SWITCH r - q i o 3 MARKTECH INTERNATIONAL 1ÖE D ST'HbSS ODQG4b4 0 MTRS9080, MTRS9080 LB INFRARED LED+ PHOTO TRANSISTOR APPLICATIONS FEATURES # SENSOR FOR AUDIO, VIDEO, FILM AND DISCS . PAPER POSITION SENSOR FOR ELECTRONIC PRINTERS & FACSIMILE.

TRANSISTOR BH RW

Abstract: BH RV transistor h0a1180 0a1180
Contextual Info: H 0A1180 Reflective Sensor FEATU RES • C h o ice of phototransistor or photodarlington output • High sensitivity • W ide operating tem perature range -55°C to +100°C • 12.0 in.(305 mm) min. 28 A W G P V C insulated wire leads D E S C R IP T IO N

1n5908

Abstract: 1n5907 transistor 5908
Contextual Info: ^ ^ ^ Tr a n s Z o r b • T R A N S IE N T VOLTAGE SU PPRES SO R S General Semiconductor • Industries, Inc. 1N5907 AND 1N5908 FEATURES APPLICATION • 5.0 volts Reverse Stand-Off voltage • Designed for T*L Logic protection • Each device 100% tested

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

Contextual Info: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is

Contextual Info: TLP137 GaAs IRED & PHOTO-TRANSISTOR T LP1 3 7 U nit in mm OFFICE M ACHIN E PR O G R A M M A B L E CONTROLLERS AC/DC-INPUT M O D ULE TELEC O M M U N IC A TIO N The TOSHIBA MINI FLAT COUPLER TLP137 is a sm all outline coupler, suitable for surface m ount assembly.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • High I • hFE=600 ~ 3600. • Noise Figure : 0.5dB Typ. at f=100Hz. if e MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage

KTC3876

Abstract: 100hfc KTA1505
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1505 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE 2 =25(Min.) at V ce=-6V , Ic=-400mA. • Complementary to KTC3876.

transistor 1107

Contextual Info: IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 µm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of

foto transistor

Abstract: FF627
Contextual Info: FOTO F ET ! SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 400, PG. 57 • • • • • ULTRA HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS ELECTRICAL DATA ,270 M A X .