TRANSISTOR ARK 05 Search Results

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

f1n05 motorola

Contextual Info: MOTOROLA O rder this docum ent by M MDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s TMOS process. These miniature surface

Contextual Info: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM

Contextual Info: TLP137 GaAs IRED & PHOTO-TRANSISTOR T LP1 3 7 U nit in mm OFFICE M ACHIN E PR O G R A M M A B L E CONTROLLERS AC/DC-INPUT M O D ULE TELEC O M M U N IC A TIO N The TOSHIBA MINI FLAT COUPLER TLP137 is a sm all outline coupler, suitable for surface m ount assembly.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE • High I • hFE=600 ~ 3600. • Noise Figure : 0.5dB Typ. at f=100Hz. if e MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage

transistor 1107

Contextual Info: IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 µm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of

Contextual Info: TO SHIBA T P S 6 12 TOSHIBA PHOTO TRANSISTOR • ■ SILICON NPN EPITAXIAL PLANAR MF FOR PHOTO SENSOR U n it in mm $ 3 .0 ± 0.3 PHOTOELECTRIC COUNTER FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT 2 - 0 .6 MAX 9}3mm resin package black

369 42 sony

Abstract: ICX026BLA ICX026AL sony CCD sensor CM500S ITT362 553C CXD1250 ICX026BU H01-H02
Contextual Info: ICX026BLA SONY» 1/2 inch CCD Image Sensor for EIA B/W Cam era Package Outline Description The IC X 026 B LA is an interline transfer C C D solidstate imager suitable for EIA 1/2 inch B/W video cam eras High sensitiveness is achieved through the adoption of HAD Hole Accumulation Diode sensors.

e 0123 yb

Contextual Info: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD217 Transistor Output [CTR = 100% Min] These devices consist of two gallium arsenide infrared em itting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface

Contextual Info: MITSUBISHI MICROCOMPUTERS M37735EHLXXXHP s° PR O M V E R S IO N O F M 3 7 7 3 5 M H L X X X H P DESCRIPTION • S in g le power s u p p ly . 2 7 - 5 .5 V The M 37735E H LX X X H P is a s ingle -chip m icro com p uter using the

Marking BA SOT89

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES

Contextual Info: Semiconductor, Inc. TC1224 100mA CMOS LDO WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ The TC1224 is a high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated sys­

Contextual Info: MOTOROLA Order this document by MRF859/D SEMICONDUCTOR TECHNICAL DATA MRF859 MRF859S The RF Line NPN Silicon RF Pow er Transistor Designed for 24 Volt UHF la rg e -sig n a l, comm on emitter, class A linear amplifier applications in industrial and commercial equipm ent operating in the

u812

Abstract: ic AD 812 AN UC812
Contextual Info: MicroConverter , Multi-Channel 12 bit ADC with Embedded MCU ADuC812 ANALOG DEVICES Preliminary Technical Data GENERAL DESCRIPTION T h e A D uC 812 is a fully integrated 12 bit data acquisition system incorporating a high perform ance self calibrating multi-channei: A D C , dual DACs and program m able 8 bit

Contextual Info: /T 7 7 £ S C S -T H O M S O N EintgisoiiLimtsiüintgs STV2162 2H - VIDEO SCANNING PROCESSOR PRO DU CT PREVIEW VIDEO PART • USER CONTROL FUNCTIONS : CONTRAST BRIGHTNESS, SATURATION, COLOR EQUALIZER ■ RGB INPUT WITH FAST-BLANKING FOR ON-SCREEN-DISPLAY/ TELETEXT

Motorola ic

Abstract: 2N6543 300 volt 5 ampere transistor a 31
Contextual Info: MOTORCL A SC XST RS/ R F 12E D I b3b?2SM 00ä4bfc.a 7 | MOTOROLA SEMICONDUCTOR 2N6543 TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS SW ITCHM ODE S E R IE S NPN SIL IC O N POWER T R A N SIST O R S

NL10276AC30-01

Abstract: nl10276ac30 transistor 2lk pc-9801 150LHS01 Nec as50
Contextual Info: DOD-H6466 1/43 TFT COLOR LCD MODULE Type: NL10276AC30-01 38cm 15.0 Type , XGA SPECIFICATIONS (F irst Edition) PRELIMINARY This document is preliminary. All information ¡n this document are subject to change Without prior notice. NEC Corporation Display Device Operations Unit

transistor c1018

Abstract: driver circuit MCT2E c1023 transistor MCL611 TRANSISTOR C1023 MCT81 MCT8 opto MCA7 C1020 MCL600
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

A7700

Contextual Info: MITSUBISHI MICROCOMPUTERS M37733EHBXXXFP M37733EHBFS 5v>w ^SO eW? a' a PR O M V E R S IO N O F M 3 7 7 3 3 M H B X X X F P DESCRIPTION • S in g le power s u p p ly .5 V ± 10% The M 37733E H B X X X F P is a single -chip m icro com p uter using the

Contextual Info: • FEATURES 1. H igh current transfer ratio C TR: M IN , 5 0 0 % at lF = 1.6 mA 2. High speed response (tpHL'TYP■ 0 . 2 ^ at R l = 2 7 0 0 ) 3. Instantaneous com m on m ode rejection voltage (C M h: T Y P . 500V V S ) 4. Directly interfaces to T T L 5. O verseas standard model

Contextual Info: SN74AHC1G00 SINGLE 2-INPUT POSITIVE-NAND GATE SCLS313D-MARCH 1996-REVISED FEBRUARY 1998 Operating Range 2-V to 5.5-V V qq DBV OR DCK PACKAGE TOP VIEW EP/C (Enhanced-Performance Implanted CMOS) Process Latch-Up Performance Exceeds 250 mA Per JESD17 Package Options Include Plastic

1996-R

Abstract: sn74ahc1g08
Contextual Info: SN74AHC1G08 SINGLE 2-INPUT POSITIVE-AND GATE SC LS 314D -M A R C H 1996-R E V IS E D FEBRUARY 1998 * Operating Range 2-V to 5.5-V V qq * EP/C Enhanced-Performance Implanted CMOS Process * Latch-Up Performance Exceeds 250 mA Per JESD17 * Package Options Include Plastic

D784035

Abstract: NEC Electronics uPD Series
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿uPD784035 A , 784036(A) 16/ 8-BIT SINGLE-CHIP MICROCONTROLLER The /xPD784036(A) is a product of the /xPD784038 sub-series in the 78K/IV series. A stricter quality assurance program applies to the /xPD784036(A) than the /¿PD784036 (standard product).