TRANSISTOR ARK 05 Search Results

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

J 420 G

Contextual Info: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

IRG4PF50W

Contextual Info: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O ptim ized fo r use in W elding and S w itch -M ode P ow er S up ply applications • Industry benchm ark switching losses im prove efficiency o f all pow er supply topologies

mpsa14

Abstract: 43t SOT23 43t transistor
Contextual Info: MPSA14 I MMBTA14 / PZTA14 D iscrete P O W E R & S ig n a l Technologies 6* National Semiconductor PZTA14 MMBTA14 MPSA14 SOT-23 B SOT-223 M ark: 1 N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from

D40 transistor

Abstract: transistor 5167 PZTA14 5Ci transistor
Contextual Info: MPSA14 I MMBTA14 / PZTA14 & D iscrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r " PZTA14 MMBTA14 MPSA14 SOT-23 SOT-223 M ark: 1 N NPN Darlington Transistor T h is d e v ice is d e s ig n e d for a p p lica tio ns requiring extrem ely

WPTS-512

Abstract: npn photo transistor phototransistor 600 nm time phototransistor 580 1050nm
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-512 1. General Description: The WPTS-512 is a high sensitivity NPN silicon phototransistor mounted in a 05mm flat head and water clear resin package. This phototransistor permits wide angular response. Dimensions

c 5802 transistor

Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Contextual Info: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by m t d f i n o 2h d /d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS POWER MOSFET

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs

Contextual Info: MOTOROLA O rder this docum ent by M TSF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 02H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs

transistor dk qq

Abstract: IRF540 motorola
Contextual Info: MOTOROLA O rder this docum ent by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IR F540 TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy

S600M

Abstract: XR-T5992
Contextual Info: XR-T5992 z e r EX A R A D V A N C ED IN FO R M A TIO N Pulse Dialer FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION T h e X R - T 5 9 9 2 pulse dialer is a silicon gate C M O S inte­ grated circuit w hich converts push-button Inputs Into pulses to simulate a rotary telephone dial.

2SC1622

Abstract: 622 t 3160E
Contextual Info: 2SC1622 Audio Frequency High Gain Amplifier NPN Silicon Epitaxial Transistor PACKAGE DIMENSIONS • High DC Current Gain: h FE=500 TYP. in m illim eters inches (VCE=3.0V, l c =0.5mA) 25'8t (0.098] (0 02) 1.5 E- 05 8 5?(o 02) H I”! ABSOLUTE M A X IM U M RATINGS

Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

transistor H-R

Abstract: KST5088 KST5089 marking SAI
Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage

05n60

Abstract: G05N60D
Contextual Info: MOTOROLA O rder this docum ent by M M G 05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMG05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate

f1n05 motorola

Contextual Info: MOTOROLA O rder this docum ent by M MDF1N05E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF1N05E TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s TMOS process. These miniature surface

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT4403 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT3906 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification PNP switching transistor PXT3906 FEATURES